Silicon NPN Digital Transistor Infineon BCR512E6327HTSA1 Featuring Built In Bias Resistors for Digital

Key Attributes
Model Number: BCR512E6327HTSA1
Product Custom Attributes
Input Resistor:
4.7kΩ
Resistor Ratio:
1
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
BCR512E6327HTSA1
Package:
SOT-23
Product Description

Product Overview

The BCR512 is an NPN Silicon Digital Transistor featuring built-in bias resistors (R1= 4.7 k, R2= 4.7 k). It is Pb-free, RoHS compliant, and qualified according to AEC Q101. This transistor is designed for digital applications.

Product Attributes

  • Brand: Infineon Technologies
  • Package: SOT23
  • Certifications: AEC Q101, RoHS compliant
  • Material: Silicon
  • Type Marking: XFs

Technical Specifications

ParameterSymbolValueUnitNotes
Collector-emitter voltageVCEO50V
Collector-base voltageVCBO50V
Input forward voltageVi(fwd)30V
Input reverse voltageVi(rev)10V
Collector currentIC500mA
Total power dissipationPtot330mWTS 79 C
Junction temperatureTj150C
Storage temperatureTstg-65 ... 150C
Junction - soldering point thermal resistanceRthJS 215K/W1)
Collector-emitter breakdown voltageV(BR)CEO50VIC = 100 A, IB = 0
Collector-base breakdown voltageV(BR)CBO50VIC = 10 A, IE = 0
Collector-base cutoff currentICBO100nAVCB = 50 V, IE = 0
Emitter-base cutoff currentIEBO1.61mAVEB = 10 V, IC = 0
DC current gainhFE60-IC = 50 mA, VCE = 5 V
Collector-emitter saturation voltageVCEsat0.3VIC = 50 mA, IB = 2.5 mA 1)
Input off voltageVi(off)0.6 - 1.5VIC = 100 A, VCE = 5 V
Input on voltageVi(on)1 - 2.2VIC = 10 mA, VCE = 0.3 V
Input resistor R1R13.2 - 4.7 - 6.2k
Resistor ratio R1/R2R1/R20.9 - 1 - 1.1-
Transition frequencyfT100MHzIC = 50 mA, VCE = 5 V, f = 100 MHz

2410121734_Infineon-BCR512E6327HTSA1_C17345370.pdf

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