Wideband silicon npn rf transistor Infineon BFP420H6327 ideal for oscillators up to 10 ghz frequency
Key Attributes
Model Number:
BFP420H6327
Product Custom Attributes
Emitter-Base Voltage(Vebo):
1.5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
210mW
Transition Frequency(fT):
25GHz
Type:
NPN
Current - Collector(Ic):
60mA
Collector - Emitter Voltage VCEO:
4.5V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
BFP420H6327
Package:
SOT-343
Product Description
BFP420 Surface Mount Wideband Silicon NPN RF Bipolar Transistor
The BFP420 is a low noise, grounded emitter (SIEGET) silicon NPN RF bipolar transistor from Infineon's fourth generation RF transistor family. With a transition frequency fT of 25 GHz, it offers high gain and low current characteristics, making it suitable for oscillators up to 10 GHz. This device provides cost competitiveness and ease of use for various RF applications.
Product Attributes
- Brand: Infineon
- Material: Silicon
- Certifications: Qualified for industrial applications according to JEDEC47/20/22.
- ESD Sensitive: Yes, observe handling precautions.
Technical Specifications
| Parameter | Symbol | Values | Unit | Note or test condition |
|---|---|---|---|---|
| Minimum noise figure | NFmin | 1.1 | dB | at 1.8 GHz, 2 V, 5 mA |
| High gain (Maximum power gain) | Gms | 21 | dB | at 1.8 GHz, 2 V, 20 mA |
| 3rd order intercept point at output | OIP3 | 22 | dBm | at 1.8 GHz, 2 V, 20 mA, ZS = ZL = 50 |
| Transition frequency | fT | 25 | GHz | VCE = 3 V, IC = 30 mA, f = 2 GHz |
| Collector base capacitance | CCB | 0.15 - 0.3 | pF | VCB = 2 V, VBE = 0, f = 1 MHz, emitter grounded |
| Collector emitter capacitance | CCE | 0.37 | - | VCE = 2 V, VBE = 0, f = 1 MHz, base grounded |
| Emitter base capacitance | CEB | 0.55 | - | VEB = 0.5 V, VCB = 0, f = 1 MHz, collector grounded |
| DC current gain | hFE | 60 - 130 | - | VCE = 4 V, IC = 20 mA, pulse measured |
| Collector emitter breakdown voltage | V(BR)CEO | 4.5 | V | IC = 1 mA, IB = 0, open base |
| Collector emitter leakage current | ICES | - - 10 | A | VCE = 15 V, VBE = 0, E-B short circuited |
| Collector base leakage current | ICBO | - 100 | nA | VCB = 5 V, IE = 0, open emitter |
| Emitter base leakage current | IEBO | - 3 | A | VEB = 0.5 V, IC = 0, open collector |
| Total power dissipation | Ptot | 210 | mW | TS 98 C |
| Junction temperature | TJ | 150 | C | - |
| Storage temperature | TStg | -55 - 150 | C | - |
Potential Applications
- Radio-frequency oscillators
- Broadband low noise amplifiers (LNAs) for CATV, DVB-T, DAB/DMB and FM/AM radio
- LNAs for sub-1 GHz ISM band applications
Device Information
| Product name / Ordering code | Package | Pin configuration | Marking | Pieces / Reel |
|---|---|---|---|---|
| BFP420 / BFP420H6327XTSA1 | SOT343 | 1 = B, 2 = E, 3 = C, 4 = E | AMs | 3000 |
| BFP420 / BFP420H6433XTMA1 | SOT343 | 1 = B, 2 = E, 3 = C, 4 = E | AMs | 10000 |
2410121549_Infineon-BFP420H6327_C412737.pdf
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