General purpose NPN transistor Infineon MMBTA 06 LT1 with environmentally friendly Pb free packaging
Key Attributes
Model Number:
MMBTA 06 LT1
Product Custom Attributes
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
225mW
Transition Frequency(fT):
100MHz
Type:
NPN
Current - Collector(Ic):
500mA
Collector - Emitter Voltage VCEO:
80V
Mfr. Part #:
MMBTA 06 LT1
Package:
SOT-23
Product Description
Product Overview
The MMBTA05LT1 and MMBTA06LT1 are NPN silicon driver transistors designed for general-purpose applications. They are available in Pb-Free packages, offering an environmentally conscious choice. These devices are suitable for various driving applications where reliable NPN transistor performance is required.
Product Attributes
- Brand: onsemi (Semiconductor Components Industries, LLC)
- Certifications: PbFree Packages Available
Technical Specifications
| Characteristic | Symbol | MMBTA05LT1 | MMBTA06LT1 | Unit | Notes |
| CollectorEmitter Voltage | VCEO | 60 | 80 | Vdc | |
| CollectorBase Voltage | VCBO | 60 | 80 | Vdc | |
| EmitterBase Voltage | VEBO | 4.0 | Vdc | ||
| Collector Current - Continuous | IC | 500 | mAdc | ||
| Total Device Dissipation (FR-5 Board) | PD | 225 | mW | TA = 25C, Derate above 25C 1.8 mW/C | |
| Thermal Resistance, Junction-to-Ambient (FR-5 Board) | RJA | 556 | C/W | ||
| Total Device Dissipation (Alumina Substrate) | PD | 300 | mW | TA = 25C, Derate above 25C 2.4 mW/C | |
| Thermal Resistance, Junction-to-Ambient (Alumina Substrate) | RJA | 417 | C/W | 99.5% alumina | |
| Junction and Storage Temperature | TJ, Tstg | -55 to +150 | C | ||
| CollectorEmitter Breakdown Voltage | V(BR)CEO | 60 | 80 | Vdc | IC = 1.0 mAdc, IB = 0 |
| EmitterBase Breakdown Voltage | V(BR)EBO | 4.0 | Vdc | IE = 100 Adc, IC = 0 | |
| Collector Cutoff Current | ICES | - | 0.1 | Adc | VCE = 60 Vdc, IB = 0 |
| Collector Cutoff Current | ICBO | - | 0.1 | Adc | MMBTA05 (VCB = 60 Vdc, IE = 0); MMBTA06 (VCB = 80 Vdc, IE = 0) |
| DC Current Gain | hFE | 100 | 100 | - | IC = 10 mAdc, VCE = 1.0 Vdc; IC = 100 mAdc, VCE = 1.0 Vdc |
| CollectorEmitter Saturation Voltage | VCE(sat) | - | 0.25 | Vdc | IC = 100 mAdc, IB = 10 mAdc |
| BaseEmitter On Voltage | VBE(on) | - | 1.2 | Vdc | IC = 100 mAdc, VCE = 1.0 Vdc |
| CurrentGain Bandwidth Product | fT | 100 | MHz | IC = 10 mA, VCE = 2.0 V, f = 100 MHz |
2410010201_Infineon-MMBTA-06-LT1_C538542.pdf
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