Silicon npn rf transistor Infineon BFP 405F H6327 designed for low noise and high frequency circuits
Key Attributes
Model Number:
BFP 405F H6327
Product Custom Attributes
Emitter-Base Voltage(Vebo):
1.5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
75mW
Transition Frequency(fT):
25GHz
Type:
NPN
Current - Collector(Ic):
25mA
Collector - Emitter Voltage VCEO:
15V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
BFP 405F H6327
Package:
TSFP-4
Product Description
Product Overview
The BFP405F is a low-profile, wideband silicon NPN RF bipolar transistor designed for high-frequency applications. It features a grounded emitter (SIEGET) structure, offering low noise characteristics and suitability for oscillators up to 12 GHz. This device provides cost competitiveness without compromising ease of use.
Product Attributes
- Brand: Infineon
- Material: Silicon
- Certifications: Qualified for industrial applications according to JEDEC47/20/22
- Sensitive Device: ESD (Electrostatic discharge) sensitive, observe handling precautions
Technical Specifications
| Parameter | Symbol | Values | Unit | Note or test condition |
| Absolute Maximum Ratings | ||||
| Collector emitter voltage | VCEO | 4.5 | V | Open base |
| Collector emitter voltage | VCES | 15 | V | E-B short circuited |
| Collector base voltage | VCBO | 15 | V | Open emitter |
| Emitter base voltage | VEBO | 1.5 | V | Open collector |
| Base current | IB | 3 | mA | |
| Collector current | IC | 25 | mA | |
| Total power dissipation | Ptot | 75 | mW | TS 112 C |
| Junction temperature | TJ | 150 | C | |
| Storage temperature | TStg | -55 150 | C | |
| Thermal Characteristics | ||||
| Junction - soldering point thermal resistance | RthJS | 500 | K/W | |
| DC Characteristics | ||||
| Collector emitter breakdown voltage | V(BR)CEO | 4 | V | IC = 1 mA, IB = 0, open base |
| Collector emitter leakage current | ICES | 10 | A | VCE = 15 V, VBE = 0, E-B short circuited |
| Collector base leakage current | ICBO | 100 | nA | VCB = 5 V, IE = 0, open emitter |
| Emitter base leakage current | IEBO | 1 | A | VEB = 0.5 V, IC = 0, open collector |
| DC current gain | hFE | 60 130 | VCE = 4 V, IC = 5 mA, pulse measured | |
| General AC Characteristics | ||||
| Transition frequency | fT | 18 25 | GHz | VCE = 3 V, IC = 10 mA, f = 2 GHz |
| Collector base capacitance | CCB | 0.05 0.1 | pF | VCB = 2 V, VBE = 0, f = 1 MHz, emitter grounded |
| Collector emitter capacitance | CCE | 0.2 | pF | VCE = 2 V, VBE = 0, f = 1 MHz, base grounded |
| Emitter base capacitance | CEB | 0.25 | pF | VEB = 0.5 V, VCB = 0, f = 1 MHz, collector grounded |
| Frequency Dependent AC Characteristics (VCE = 2 V, f = 1.8 GHz) | ||||
| Maximum power gain | Gms | 22.5 | dB | IC = 5 mA |
| Minimum noise figure | NFmin | 1.25 | dB | IC = 2 mA |
| 3rd order intercept point at output | OIP3 | 14 | dBm | IC = 5 mA, ZS = ZL = 50 |
2410121538_Infineon-BFP-405F-H6327_C534086.pdf
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