NPN Silicon Digital Transistor Infineon BCR 108W H6327 Designed for Switching and Interface Circuits

Key Attributes
Model Number: BCR 108W H6327
Product Custom Attributes
Input Resistor:
2.2kΩ
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
BCR 108W H6327
Package:
SOT-323-3
Product Description

Product Overview

The BCR108 is an NPN Silicon Digital Transistor designed for switching circuits, inverters, interface circuits, and driver circuits. It features built-in bias resistors (R1=2.2 k, R2=47 k). The BCR108S variant offers two internally isolated transistors with good matching in a single multichip package. All variants are Pb-free (RoHS compliant) and qualified according to AEC Q101.

Product Attributes

  • Brand: Infineon Technologies
  • Certifications: AEC Q101, RoHS compliant
  • Material: Silicon

Technical Specifications

ParameterSymbolBCR108BCR108SBCR108WUnit
Collector-emitter voltageVCEO505050V
Collector-base voltageVCBO505050V
Input forward voltageVi(fwd)202020V
Input reverse voltageVi(rev)555V
Collector currentIC100100100mA
Total power dissipation (TS 102C)Ptot200--mW
Total power dissipation (TS 115C)Ptot-250-mW
Total power dissipation (TS 124C)Ptot--250mW
Junction temperatureTj150150150C
Storage temperatureTstg-65 ... 150-65 ... 150-65 ... 150C
Junction - soldering point thermal resistanceRthJS 240 140 105K/W
Collector-emitter breakdown voltage (IC = 100 A, IB = 0)V(BR)CEO505050V
Collector-base breakdown voltage (IC = 10 A, IE = 0)V(BR)CBO505050V
Collector-base cutoff current (VCB = 40 V, IE = 0)ICBO--100nA
Emitter-base cutoff current (VEB = 5 V, IC = 0)IEBO--164A
DC current gain (IC = 5 mA, VCE = 5 V)hFE707070-
Collector-emitter saturation voltage (IC = 10 mA, IB = 0.5 mA)VCEsat--0.3V
Input off voltage (IC = 100 A, VCE = 5 V)Vi(off)0.4 - 0.80.4 - 0.80.4 - 0.8V
Input on voltage (IC = 2 mA, VCE = 0.3 V)Vi(on)0.5 - 1.10.5 - 1.10.5 - 1.1V
Input resistor R1R11.5 - 2.91.5 - 2.91.5 - 2.9k
Resistor ratio R1/R2R1/R20.042 - 0.0520.042 - 0.0520.042 - 0.052-
Transition frequency (IC = 10 mA, VCE = 5 V, f = 1 MHz)fT170170170MHz
Collector-base capacitance (VCB = 10 V, f = 1 MHz)Ccb222pF

2410121919_Infineon-BCR-108W-H6327_C533809.pdf

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