NPN Silicon Digital Transistor Infineon BCR 108W H6327 Designed for Switching and Interface Circuits
Product Overview
The BCR108 is an NPN Silicon Digital Transistor designed for switching circuits, inverters, interface circuits, and driver circuits. It features built-in bias resistors (R1=2.2 k, R2=47 k). The BCR108S variant offers two internally isolated transistors with good matching in a single multichip package. All variants are Pb-free (RoHS compliant) and qualified according to AEC Q101.
Product Attributes
- Brand: Infineon Technologies
- Certifications: AEC Q101, RoHS compliant
- Material: Silicon
Technical Specifications
| Parameter | Symbol | BCR108 | BCR108S | BCR108W | Unit |
| Collector-emitter voltage | VCEO | 50 | 50 | 50 | V |
| Collector-base voltage | VCBO | 50 | 50 | 50 | V |
| Input forward voltage | Vi(fwd) | 20 | 20 | 20 | V |
| Input reverse voltage | Vi(rev) | 5 | 5 | 5 | V |
| Collector current | IC | 100 | 100 | 100 | mA |
| Total power dissipation (TS 102C) | Ptot | 200 | - | - | mW |
| Total power dissipation (TS 115C) | Ptot | - | 250 | - | mW |
| Total power dissipation (TS 124C) | Ptot | - | - | 250 | mW |
| Junction temperature | Tj | 150 | 150 | 150 | C |
| Storage temperature | Tstg | -65 ... 150 | -65 ... 150 | -65 ... 150 | C |
| Junction - soldering point thermal resistance | RthJS | 240 | 140 | 105 | K/W |
| Collector-emitter breakdown voltage (IC = 100 A, IB = 0) | V(BR)CEO | 50 | 50 | 50 | V |
| Collector-base breakdown voltage (IC = 10 A, IE = 0) | V(BR)CBO | 50 | 50 | 50 | V |
| Collector-base cutoff current (VCB = 40 V, IE = 0) | ICBO | - | - | 100 | nA |
| Emitter-base cutoff current (VEB = 5 V, IC = 0) | IEBO | - | - | 164 | A |
| DC current gain (IC = 5 mA, VCE = 5 V) | hFE | 70 | 70 | 70 | - |
| Collector-emitter saturation voltage (IC = 10 mA, IB = 0.5 mA) | VCEsat | - | - | 0.3 | V |
| Input off voltage (IC = 100 A, VCE = 5 V) | Vi(off) | 0.4 - 0.8 | 0.4 - 0.8 | 0.4 - 0.8 | V |
| Input on voltage (IC = 2 mA, VCE = 0.3 V) | Vi(on) | 0.5 - 1.1 | 0.5 - 1.1 | 0.5 - 1.1 | V |
| Input resistor R1 | R1 | 1.5 - 2.9 | 1.5 - 2.9 | 1.5 - 2.9 | k |
| Resistor ratio R1/R2 | R1/R2 | 0.042 - 0.052 | 0.042 - 0.052 | 0.042 - 0.052 | - |
| Transition frequency (IC = 10 mA, VCE = 5 V, f = 1 MHz) | fT | 170 | 170 | 170 | MHz |
| Collector-base capacitance (VCB = 10 V, f = 1 MHz) | Ccb | 2 | 2 | 2 | pF |
2410121919_Infineon-BCR-108W-H6327_C533809.pdf
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