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quality Switching Circuit NPN Transistor Featuring Built-in Bias Resistor Infineon BCR146E6327HTSA1 SOT23 Package factory
quality Switching Circuit NPN Transistor Featuring Built-in Bias Resistor Infineon BCR146E6327HTSA1 SOT23 Package factory

Switching Circuit NPN Transistor Featuring Built-in Bias Resistor Infineon BCR146E6327HTSA1 SOT23 Package

Key Attributes
Model Number: BCR146E6327HTSA1
Product Custom Attributes
Input Resistor:
62kΩ
Resistor Ratio:
2.14
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
BCR146E6327HTSA1
Package:
SOT-23
Product Description

Product Overview

The BCR146 is an NPN Silicon Digital Transistor designed for switching circuits, inverters, interface circuits, and driver circuits. It features a built-in bias resistor (R1=47k, R2=22k) and is Pb-free (RoHS compliant), qualified according to AEC Q101. This transistor is supplied in a SOT23 package.

Product Attributes

  • Brand: Infineon Technologies
  • Package: SOT23
  • Certifications: AEC Q101
  • Compliance: Pb-free (RoHS compliant)
  • Built-in Bias Resistor: R1=47k, R2=22k

Technical Specifications

ParameterSymbolValueUnitNotes
Maximum Ratings
Collector-emitter voltageVCEO50V
Collector-base voltageVCBO50V
Input forward voltageVi(fwd)80
Input reverse voltageVi(rev)10
Collector currentIC70mA
Total power dissipation (TS 102C)Ptot200mW
Junction temperatureTj150C
Storage temperatureTstg-65 ... 150C
Thermal Resistance
Junction - soldering pointRthJS 240K/W1)
DC Characteristics (TA = 25C, unless otherwise specified)
Collector-emitter breakdown voltageV(BR)CEO50VIC = 100 A, IB = 0
Collector-base breakdown voltageV(BR)CBO50VIC = 10 A, IE = 0
Collector-base cutoff currentICBO-100nAVCB = 40 V, IE = 0
Emitter-base cutoff currentIEBO-220AVEB = 10 V, IC = 0
DC current gainhFE50-IC = 5 mA, VCE = 5 V, 2)
Collector-emitter saturation voltageVCEsat-0.3VIC = 10 mA, IB = 0.5 mA, 2)
Input off voltageVi(off)1.22.6VIC = 100 A, VCE = 5 V
Input on voltageVi(on)1.54VIC = 2 mA, VCE = 0.3 V
Input resistor R1R13262k
Resistor ratio R1/R2R1/R21.922.36-
AC Characteristics
Transition frequencyfT-150MHzIC = 10 mA, VCE = 5 V, f = 100 MHz
Collector-base capacitanceCcb-3pFVCB = 10 V, f = 1 MHz

Notes:
1) For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation)
2) Pulse test: t < 300s; D < 2%


2410121740_Infineon-BCR146E6327HTSA1_C3588768.pdf

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