Automotive Grade Silicon Digital Transistor with Built in Bias Resistors Infineon BCR503E6327HTSA1 RoHS Compliant
Product Overview
The BCR503 is an NPN Silicon Digital Transistor featuring built-in bias resistors (R1= 2.2 k, R2= 2.2 k). It is Pb-free (RoHS compliant) and qualified according to AEC Q101, making it suitable for automotive applications. This transistor offers integrated biasing, simplifying circuit design and reducing component count.
Product Attributes
- Brand: Infineon Technologies
- Origin: Germany
- Material: Silicon
- Certifications: RoHS compliant, AEC Q101 qualified
Technical Specifications
| Parameter | Symbol | Value | Unit | Notes |
| Collector-emitter voltage | VCEO | 50 | V | |
| Collector-base voltage | VCBO | 50 | V | |
| Input forward voltage | Vi(fwd) | 20 | V | |
| Input reverse voltage | Vi(rev) | 10 | V | |
| Collector current | IC | 500 | mA | |
| Total power dissipation | Ptot | 330 | mW | TS 79 C |
| Junction temperature | Tj | 150 | C | |
| Storage temperature | Tstg | -65 ... 150 | C | |
| Junction - soldering point thermal resistance | RthJS | 215 | K/W | 1) |
| Collector-emitter breakdown voltage | V(BR)CEO | 50 | V | IC = 100 A, IB = 0 |
| Collector-base breakdown voltage | V(BR)CBO | 50 | V | IC = 10 A, IE = 0 |
| Collector-base cutoff current | ICBO | 100 | nA | VCB = 50 V, IE = 0 |
| Emitter-base cutoff current | IEBO | 3.5 | mA | VEB = 10 V, IC = 0 |
| DC current gain | hFE | 40 | - | IC = 50 mA, VCE = 5 V |
| Collector-emitter saturation voltage | VCEsat | 0.3 | V | IC = 50 mA, IB = 2.5 mA |
| Input off voltage | Vi(off) | 0.6 - 1.5 | IC = 100 A, VCE = 5 V | |
| Input on voltage | Vi(on) | 1 - 1.8 | IC = 10 mA, VCE = 0.3 V | |
| Input resistor R1 | R1 | 1.5 - 2.9 | k | typ. 2.2 k |
| Resistor ratio R1/R2 | R1/R2 | 0.9 - 1.1 | - | typ. 1 |
| Transition frequency | fT | 100 | MHz | IC = 50 mA, VCE = 5 V, f = 100 MHz |
2410121735_Infineon-BCR503E6327HTSA1_C17500696.pdf
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