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quality PNP Silicon Digital Transistor Infineon BCR166W Ideal for Interface Circuits and Driver Applications factory
quality PNP Silicon Digital Transistor Infineon BCR166W Ideal for Interface Circuits and Driver Applications factory

PNP Silicon Digital Transistor Infineon BCR166W Ideal for Interface Circuits and Driver Applications

Key Attributes
Model Number: BCR166W
Product Custom Attributes
Input Resistor:
6.2kΩ
Resistor Ratio:
10
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
BCR166W
Package:
SOT-323-3
Product Description

Product Overview

The BCR166 is a PNP Silicon Digital Transistor designed for switching circuits, inverters, interface circuits, and driver circuits. It features built-in bias resistors (R1 = 4.7 k, R2 = 47 k) and is Pb-free, complying with RoHS standards. This component is qualified according to AEC Q101.

Product Attributes

  • Brand: Infineon Technologies
  • Certifications: AEC Q101, RoHS compliant
  • Package Types: SOT23, SOT323

Technical Specifications

ParameterSymbolBCR166 (SOT23)BCR166W (SOT323)UnitNotes
Collector-emitter voltageVCEO50V
Collector-base voltageVCBO50V
Input forward voltageVi(fwd)30V
Input reverse voltageVi(rev)5V
Collector currentIC100mA
Total power dissipation (TS 102C)Ptot200-mW
Total power dissipation (TS 124C)Ptot-250mW
Junction temperatureTj150C
Storage temperatureTstg-65 ... 150C
Junction - soldering point thermal resistanceRthJS 240 105K/W1)
Collector-emitter breakdown voltageV(BR)CEO50VIC = 100 A, IB = 0
Collector-base breakdown voltageV(BR)CBO50VIC = 10 A, IE = 0
Collector-base cutoff currentICBO100nAVCB = 40 V, IE = 0
Emitter-base cutoff currentIEBO155AVEB = 5 V, IC = 0
DC current gainhFE70-IC = 5 mA, VCE = 5 V 2)
Collector-emitter saturation voltageVCEsat0.3VIC = 10 mA, IB = 0.5 mA 2)
Input off voltageVi(off)0.4 - 0.8VIC = 100 A, VCE = 5 V
Input on voltageVi(on)0.5 - 1.4VIC = 2 mA, VCE = 0.3 V
Input resistorR13.2 - 6.2k
Resistor ratioR1/R20.09 - 0.11-
Transition frequencyfT160MHzIC = 10 mA, VCE = 5 V, f = 100 MHz
Collector-base capacitanceCcb3pFVCB = 10 V, f = 1 MHz

1) For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation). 2) Pulse test: t < 300s; D < 2%.


2411280011_Infineon-BCR166W_C3588703.pdf

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