86--136 6733 2386
quality Pb free Silicon Variable Capacitance Diode Infineon BB640 for VHF TV and VTR Tuner Frequency Control factory
quality Pb free Silicon Variable Capacitance Diode Infineon BB640 for VHF TV and VTR Tuner Frequency Control factory

Pb free Silicon Variable Capacitance Diode Infineon BB640 for VHF TV and VTR Tuner Frequency Control

Key Attributes
Model Number: BB640
Product Custom Attributes
Mfr. Part #:
BB640
Product Description

Product Overview

The BB640 is a Silicon Variable Capacitance Diode designed for VHF TV and VTR tuners. It features a Pb-free (RoHS compliant) package, making it suitable for modern electronic applications. This diode offers precise capacitance control across various voltage and frequency ranges, essential for tuner performance.

Product Attributes

  • Brand: Infineon Technologies
  • Type: Silicon Variable Capacitance Diode
  • Package: SOD323
  • Marking: red
  • Compliance: Pb-free (RoHS compliant)

Technical Specifications

Parameter Symbol Value Unit Notes
Maximum Ratings at TA = 25C, unless otherwise specified
Diode reverse voltage VR 30 V
Peak reverse voltage VRM 35 V (R 5k)
Forward current IF 20 mA
Operating temperature range Top -55 ... 150 C
Storage temperature Tstg -55 ... 150 C
Electrical Characteristics at TA = 25C, unless otherwise specified
DC Characteristics
Reverse current IR - nA VR = 30 V
Reverse current IR - 10 nA VR = 30 V, TA = 85 C
Reverse current IR - 200 nA VR = 30 V, TA = 85 C
AC Characteristics
Diode capacitance CT 62 pF VR = 1 V, f = 1 MHz
Diode capacitance CT 47.5 pF VR = 1 V, f = 1 MHz
Diode capacitance CT 2.85 pF VR = 1 V, f = 1 MHz
Diode capacitance CT 2.8 pF VR = 1 V, f = 1 MHz
Diode capacitance CT 69 pF VR = 2 V, f = 1 MHz
Diode capacitance CT 54.5 pF VR = 2 V, f = 1 MHz
Diode capacitance CT 3.28 pF VR = 2 V, f = 1 MHz
Diode capacitance CT 3.05 pF VR = 2 V, f = 1 MHz
Diode capacitance CT 76 pF VR = 25 V, f = 1 MHz
Diode capacitance CT 61.5 pF VR = 25 V, f = 1 MHz
Diode capacitance CT 3.7 pF VR = 25 V, f = 1 MHz
Diode capacitance CT 3.3 pF VR = 25 V, f = 1 MHz
Diode capacitance CT - pF VR = 28 V, f = 1 MHz
Capacitance ratio CT1/CT28 19.5 - VR = 1 V, VR = 28 V, f = 1 MHz
Capacitance ratio CT1/CT28 25 - VR = 1 V, VR = 28 V, f = 1 MHz
Capacitance ratio CT2/CT25 15 - VR = 2 V, VR = 25 V, f = 1 MHz
Capacitance ratio CT2/CT25 16.6 - VR = 2 V, VR = 25 V, f = 1 MHz
Capacitance matching CT/CT - 2.5 % VR = 1 V, VR = 28 V, f = 1 MHz (1)
Series resistance rS - 1.15 CT = 12 pF, f = 100 MHz

(1) For details please refer to Application Note 047.


2411220050_Infineon-BB640_C3271992.pdf

Related Products
quality N Channel Enhancement Mode MOSFET YANGJIE YJG70G06A with Low RDS ON and Excellent Thermal Performance factory
N Channel Enhancement Mode MOSFET YANGJIE YJG70G06A with Low RDS ON and Excellent Thermal Performance
Product OverviewThe YJG70G06A is an N-Channel Enhancement Mode Field Effect Transistor from Yangzhou Yangjie Electronic Technology Co., Ltd. Featuring Split Gate Trench MOSFET technology and a high-density cell design, it offers excellent package heat dissipation and low RDS(ON). It is suitable for ...
quality High Forward Surge Capability and Low Reverse Leakage Surface Mount Rectifier ZHIDE RS3M for Electronics factory
High Forward Surge Capability and Low Reverse Leakage Surface Mount Rectifier ZHIDE RS3M for Electronics
Product OverviewThe RS3A-RS3M series are surface mount super fast recovery rectifiers designed for high-speed switching applications. They offer low reverse leakage, high forward surge capability, and high reliability, making them suitable for demanding electronic circuits. These diodes are ...
quality General purpose Zener diode XZT BZT52B30 featuring planar die construction for medium current electronic factory
General purpose Zener diode XZT BZT52B30 featuring planar die construction for medium current electronic
BZT52B2V4 thru BZT52B43 ZENER DIODEThe BZT52B2V4 thru BZT52B43 series is a range of Zener diodes featuring planar die construction. These diodes are designed for general purpose, medium current applications and are ideally suited for automated assembly processes. They are available in a lead-free ...
quality Silicon Carbide Schottky Barrier Diode Wolfspeed E4D20120A 1200 Volt 20 Amp Automotive Grade Device factory
Silicon Carbide Schottky Barrier Diode Wolfspeed E4D20120A 1200 Volt 20 Amp Automotive Grade Device
Product Overview This 4th Generation 1200 V, 20 A Silicon Carbide (SiC) Schottky Barrier diode, designated E4D20120A, offers significant performance advantages over silicon-based solutions. Power electronics systems can achieve higher efficiency standards, reach higher frequencies, and attain ...
Contact Our Experts And Get A Free Consultation!

Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.