IGBT 7 module Infineon IKW30N65ET7 featuring low VCE saturation and short tail current for switching
Key Attributes
Model Number:
IKW30N65ET7
Product Custom Attributes
Td(off):
245ns
Pd - Power Dissipation:
188W
Td(on):
19ns
Collector-Emitter Breakdown Voltage (Vces):
650V
Reverse Transfer Capacitance (Cres):
20pF
IGBT Type:
FS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
4.3V@0.3mA
Gate Charge(Qg):
180nC@15V
Operating Temperature:
-40℃~+175℃
Reverse Recovery Time(trr):
80ns
Switching Energy(Eoff):
500uJ
Turn-On Energy (Eon):
590uJ
Input Capacitance(Cies):
1.9nF
Pulsed Current- Forward(Ifm):
90A
Output Capacitance(Coes):
62pF
Mfr. Part #:
IKW30N65ET7
Package:
TO-247-3
Product Description
Product Overview
The IKW30N65ET7 is a low-loss IGBT 7 module featuring Trench and Fieldstop technology. It offers a high collector-emitter voltage of 650 V and a continuous collector current of 30 A. Key advantages include very low VCE,sat, low turn-off losses, short tail current, and reduced EMI. It is equipped with a very soft, fast recovery antiparallel diode and supports a maximum junction temperature of 175C. This product is qualified according to JEDEC standards for target applications and is Pb-free and RoHS compliant.
Product Attributes
- Brand: Infineon
- Technology: IGBT 7 with Trench and Fieldstop
- Compliance: Pb-free lead plating, RoHS compliant
- Qualification: JEDEC for target applications, Qualified for industrial applications
- Models: PSpice Models available
Technical Specifications
| Parameter | Symbol | Note or test condition | Values | Unit |
| Package | ||||
| Internal emitter inductance | LE | measured 5 mm (0.197 in.) from case | 13 | nH |
| Storage temperature | Tstg | -55 to 150 | C | |
| Soldering temperature | Tsold | wave soldering 1.6 mm (0.063 in.) from case for 10 s | 260 | C |
| Mounting torque | M | M3 screw, Maximum of mounting processes | 0.6 | Nm |
| Thermal resistance, junction-ambient | Rth(j-a) | 40 | K/W | |
| IGBT thermal resistance, junction-case | Rth(j-c) | 0.8 | K/W | |
| Diode thermal resistance, junction-case | Rth(j-c) | 1.1 | K/W | |
| IGBT - Maximum Rated Values | ||||
| Collector-emitter voltage | VCE | Tvj 25 C | 650 | V |
| DC collector current, limited by Tvjmax | IC | Tc = 25 C | 60 | A |
| DC collector current, limited by Tvjmax | IC | Tc = 100 C | 39.1 | A |
| Pulsed collector current, tp limited by Tvjmax | ICpulse | 90 | A | |
| Gate-emitter voltage | VGE | 20 | V | |
| Transient gate-emitter voltage | VGE | tp 10 s, D < 0.01 | 30 | V |
| Short-circuit withstand time | tSC | VGE = 15 V, Allowed number of short circuits < 1000, Time between short circuits 1.0 s | 5 s (VCC 330 V, Tvj = 100 C) 3 s (VCC 400 V, Tvj = 150 C) | s |
| Power dissipation | Ptot | Tc = 25 C | 188 | W |
| Power dissipation | Ptot | Tc = 100 C | 94 | W |
| IGBT - Characteristic Values | ||||
| Collector-emitter saturation voltage | VCEsat | IC = 30 A, VGE = 15 V | 1.35 - 1.65 (Tvj = 25 C) 1.5 (Tvj = 125 C) 1.6 (Tvj = 175 C) | V |
| Gate-emitter threshold voltage | VGEth | IC = 0.3 mA, VCE = VGE | 4.3 - 5.7 | V |
| Zero gate-voltage collector current | ICES | VCE = 650 V, VGE = 0 V | 40 A (Tvj = 25 C) 800 A (Tvj = 175 C) | A |
| Gate-emitter leakage current | IGES | VCE = 0 V, VGE = 20 V | 100 | nA |
| Transconductance | gfs | IC = 30 A, VCE = 20 V | 15 | S |
| Short-circuit collector current | ISC | VCC 400 V, VGE = 15 V, tSC 3 s, Allowed number of short circuits < 1000, Time between short circuits 1.0 s, Tvj = 150 C | 160 | A |
| Input capacitance | Cies | VCE = 25 V, VGE = 0 V, f = 1000 kHz | 1900 | pF |
| Output capacitance | Coes | VCE = 25 V, VGE = 0 V, f = 1000 kHz | 62 | pF |
| Reverse transfer capacitance | Cres | VCE = 25 V, VGE = 0 V, f = 1000 kHz | 20 | pF |
| Gate charge | QG | IC = 30 A, VGE = 15 V, VCC = 520 V | 180 | nC |
| Turn-on delay time | td(on) | VCC = 400 V, VGE = 0/15 V, RG(on) = 10 , RG(off) = 10 , L = 32 nH, C = 30 pF | 19 - 22 | ns |
| Rise time (inductive load) | tr | VCC = 400 V, VGE = 0/15 V, RG(on) = 10 , RG(off) = 10 , L = 32 nH, C = 30 pF | 7 - 15 | ns |
| Turn-off delay time | td(off) | VCC = 400 V, VGE = 0/15 V, RG(on) = 10 , RG(off) = 10 , L = 32 nH, C = 30 pF | 245 - 355 | ns |
| Fall time (inductive load) | tf | VCC = 400 V, VGE = 0/15 V, RG(on) = 10 , RG(off) = 10 , L = 32 nH, C = 30 pF | 9 - 53 | ns |
| Turn-on energy | Eon | VCC = 400 V, VGE = 0/15 V, RG(on) = 10 , RG(off) = 10 , L = 32 nH, C = 30 pF | 0.26 - 0.96 | mJ |
| Turn-off energy | Eoff | VCC = 400 V, VGE = 0/15 V, RG(on) = 10 , RG(off) = 10 , L = 32 nH, C = 30 pF | 0.22 - 0.9 | mJ |
| Total switching energy | Ets | VCC = 400 V, VGE = 0/15 V, RG(on) = 10 , RG(off) = 10 , L = 32 nH, C = 30 pF | 0.48 - 1.86 | mJ |
| Operating junction temperature | Tvj | -40 to 175 | C | |
| Diode - Maximum Rated Values | ||||
| Repetitive peak reverse voltage | VRRM | Tvj 25 C | 650 | V |
| Diode forward current, limited by bondwire | IF | Tc = 25 C | 40 | A |
| Diode forward current, limited by bondwire | IF | Tc = 100 C | 34.8 | A |
| Diode pulsed current, tp limited by Tvjmax | IFpulse | 90 | A | |
| Diode - Characteristic Values | ||||
| Diode forward voltage | VF | IF = 30 A | 1.55 - 2 (Tvj = 25 C) 1.6 (Tvj = 125 C) 1.55 (Tvj = 175 C) | V |
| Diode reverse recovery time | trr | VR = 400 V | 55 - 140 | ns |
| Diode reverse recovery charge | Qrr | VR = 400 V | 0.48 - 1.9 | C |
| Diode peak reverse recovery current | Irrm | VR = 400 V | 18.4 - 25.8 | A |
| Diode peak rate of fall of reverse recovery current | dirr/dt | VR = 400 V | 205 - 440 | A/s |
| Operating junction temperature | Tvj | -40 to 175 | C | |
Potential Applications
- Servo drives
- General purpose drives (GPD)
- Industrial power supplies
- Industrial UPS
- Industrial SMPS
- Energy generation
- Solar optimizer
- Solar string inverter
2411141759_Infineon-IKW30N65ET7_C5359096.pdf
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