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quality power transistor Infineon AIGB15N65H5 IGBT with low gate charge and 175C maximum junction temperature factory
quality power transistor Infineon AIGB15N65H5 IGBT with low gate charge and 175C maximum junction temperature factory
quality power transistor Infineon AIGB15N65H5 IGBT with low gate charge and 175C maximum junction temperature factory
quality power transistor Infineon AIGB15N65H5 IGBT with low gate charge and 175C maximum junction temperature factory

power transistor Infineon AIGB15N65H5 IGBT with low gate charge and 175C maximum junction temperature

Key Attributes
Model Number: AIGB15N65H5
Product Custom Attributes
Mfr. Part #:
AIGB15N65H5
Package:
TO-263
Product Description

Product Overview

The AIGB15N65H5 is a high-speed Insulated Gate Bipolar Transistor (IGBT) from Infineon's TRENCHSTOP 5 technology. It offers best-in-class efficiency in hard switching and resonant topologies, serving as a plug-and-play replacement for previous generation IGBTs. With a 650V breakdown voltage, low gate charge, and a maximum junction temperature of 175C, this dynamically stress-tested and AEC-Q101 qualified component is ideal for demanding power applications.

Product Attributes

  • Brand: Infineon
  • Technology: TRENCHSTOPTM 5
  • Certifications: AEC-Q101 Qualified
  • Package: Green package (RoHS compliant)
  • PSpice Models: Available at http://www.infineon.com/igbt/

Technical Specifications

TypeVCEICVCEsat, Tvj=25CTvjmaxMarkingPackage
AIGB15N65H5650V15A1.65V175CAG15EH5PG-TO263-3
ParameterSymbolConditionsValueUnit
Maximum Ratings
Collector-emitter voltageVCETvj 25C650V
DC collector current, limited by TvjmaxICTc = 25C30.0A
DC collector current, limited by TvjmaxICTc = 100C18.0A
Pulsed collector current, tp limited by TvjmaxICpuls45.0A
Turn off safe operating areaVCE 650V, Tvj 175C, tp = 1s-45.0A
Gate-emitter voltageVGE20V
Transient Gate-emitter voltagetp 10s, D < 0.01030V
Power dissipationPtotTc = 25C105.0W
Power dissipationPtotTc = 100C52.5W
Operating junction temperatureTvj-40...+175C
Storage temperatureTstg-55...+150C
Soldering temperature, reflow solderingMSL1 according to JEDEC J-STA-020260C
Thermal Resistance
IGBT thermal resistance, junction - caseRth(j-c)1.40K/W
Thermal resistance, min. footprint junction - ambientRth(j-a)65K/W
Thermal resistance, 6cm Cu on PCB junction - ambientRth(j-a)40K/W
Electrical Characteristics
Collector-emitter breakdown voltageV(BR)CESVGE = 0V, IC = 0.20mA650V
Collector-emitter saturation voltageVCEsatVGE = 15.0V, IC = 15.0A, Tvj = 25C1.65V
Collector-emitter saturation voltageVCEsatVGE = 15.0V, IC = 15.0A, Tvj = 125C1.85V
Collector-emitter saturation voltageVCEsatVGE = 15.0V, IC = 15.0A, Tvj = 175C2.10V
Gate-emitter threshold voltageVGE(th)IC = 0.15mA, VCE = VGE4.0V
Zero gate voltage collector currentICESVCE = 650V, VGE = 0V, Tvj = 25C1000A
Zero gate voltage collector currentICESVCE = 650V, VGE = 0V, Tvj = 175C40A
Gate-emitter leakage currentIGESVCE = 0V, VGE = 20V100nA
TransconductancegfsVCE = 20V, IC = 15.0A15.0S
Dynamic Characteristics
Input capacitanceCiesVCE = 25V, VGE = 0V, f = 1MHz930pF
Output capacitanceCoesVCE = 25V, VGE = 0V, f = 1MHz24pF
Reverse transfer capacitanceCresVCE = 25V, VGE = 0V, f = 1MHz4pF
Gate chargeQGVCC = 520V, IC = 15.0A, VGE = 15V40.0nC
Internal emitter inductanceLEmeasured 5mm (0.197 in.) from case7.0nH
Switching Characteristics (Inductive Load)
Turn-on delay timetd(on)Tvj = 25C, VCC = 400V, IC = 7.5A, VGE = 0.0/15.0V, RG = 39.024ns
Rise timetrTvj = 25C, VCC = 400V, IC = 7.5A, VGE = 0.0/15.0V, RG = 39.013ns
Turn-off delay timetd(off)Tvj = 25C, VCC = 400V, IC = 7.5A, VGE = 0.0/15.0V, RG = 39.0151ns
Fall timetfTvj = 25C, VCC = 400V, IC = 7.5A, VGE = 0.0/15.0V, RG = 39.022ns
Turn-on energyEonTvj = 25C, VCC = 400V, IC = 7.5A, VGE = 0.0/15.0V, RG = 39.00.16mJ
Turn-off energyEoffTvj = 25C, VCC = 400V, IC = 7.5A, VGE = 0.0/15.0V, RG = 39.00.04mJ
Total switching energyEtsTvj = 25C, VCC = 400V, IC = 7.5A, VGE = 0.0/15.0V, RG = 39.00.20mJ
Turn-on delay timetd(on)Tvj = 25C, VCC = 400V, IC = 2.0A, VGE = 0.0/15.0V, RG = 39.020ns
Rise timetrTvj = 25C, VCC = 400V, IC = 2.0A, VGE = 0.0/15.0V, RG = 39.07ns
Turn-off delay timetd(off)Tvj = 25C, VCC = 400V, IC = 2.0A, VGE = 0.0/15.0V, RG = 39.0156ns
Fall timetfTvj = 25C, VCC = 400V, IC = 2.0A, VGE = 0.0/15.0V, RG = 39.045ns
Turn-on energyEonTvj = 25C, VCC = 400V, IC = 2.0A, VGE = 0.0/15.0V, RG = 39.00.05mJ
Turn-off energyEoffTvj = 25C, VCC = 400V, IC = 2.0A, VGE = 0.0/15.0V, RG = 39.00.01mJ
Total switching energyEtsTvj = 25C, VCC = 400V, IC = 2.0A, VGE = 0.0/15.0V, RG = 39.00.06mJ
Turn-on delay timetd(on)Tvj = 150C, VCC = 400V, IC = 7.5A, VGE = 0.0/15.0V, RG = 39.023ns
Rise timetrTvj = 150C, VCC = 400V, IC = 7.5A, VGE = 0.0/15.0V, RG = 39.013ns
Turn-off delay timetd(off)Tvj = 150C, VCC = 400V, IC = 7.5A, VGE = 0.0/15.0V, RG = 39.0171ns
Fall timetfTvj = 150C, VCC = 400V, IC = 7.5A, VGE = 0.0/15.0V, RG = 39.026ns
Turn-on energyEonTvj = 150C, VCC = 400V, IC = 7.5A, VGE = 0.0/15.0V, RG = 39.00.23mJ
Turn-off energyEoffTvj = 150C, VCC = 400V, IC = 7.5A, VGE = 0.0/15.0V, RG = 39.00.06mJ
Total switching energyEtsTvj = 150C, VCC = 400V, IC = 7.5A, VGE = 0.0/15.0V, RG = 39.00.29mJ
Turn-on delay timetd(on)Tvj = 150C, VCC = 400V, IC = 2.0A, VGE = 0.0/15.0V, RG = 39.017ns
Rise timetrTvj = 150C, VCC = 400V, IC = 2.0A, VGE = 0.0/15.0V, RG = 39.010ns
Turn-off delay timetd(off)Tvj = 150C, VCC = 400V, IC = 2.0A, VGE = 0.0/15.0V, RG = 39.0190ns
Fall timetfTvj = 150C, VCC = 400V, IC = 2.0A, VGE = 0.0/15.0V, RG = 39.049ns
Turn-on energyEonTvj = 150C, VCC = 400V, IC = 2.0A, VGE = 0.0/15.0V, RG = 39.00.08mJ
Turn-off energyEoffTvj = 150C, VCC = 400V, IC = 2.0A, VGE = 0.0/15.0V, RG = 39.00.02mJ
Total switching energyEtsTvj = 150C, VCC = 400V, IC = 2.0A, VGE = 0.0/15.0V, RG = 39.00.10mJ

Applications: Off-board charger, On-board charger, DC/DC converter, Power-Factor correction.


2504101957_Infineon-AIGB15N65H5_C533143.pdf

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