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quality Trench Fieldstop IGBT4 module Infineon FS3L25R12W2H3B11 with Al2O3 substrate and low switching losses factory
quality Trench Fieldstop IGBT4 module Infineon FS3L25R12W2H3B11 with Al2O3 substrate and low switching losses factory

Trench Fieldstop IGBT4 module Infineon FS3L25R12W2H3B11 with Al2O3 substrate and low switching losses

Key Attributes
Model Number: FS3L25R12W2H3B11
Product Custom Attributes
Td(off):
240ns
Pd - Power Dissipation:
175W
Td(on):
55ns
Collector-Emitter Breakdown Voltage (Vces):
1.2kV
Input Capacitance(Cies):
1.43nF@25V
IGBT Type:
-
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
5.25V@0.85mA
Operating Temperature:
-40℃~+150℃
Switching Energy(Eoff):
600uJ
Turn-On Energy (Eon):
670uJ
Mfr. Part #:
FS3L25R12W2H3B11
Package:
Through Hole,62.8x56.7mm
Product Description

Product Overview

The FS3L25R12W2H3_B11 is an EasyPACK module featuring fast Trench/Fieldstop IGBT4 and Emitter Controlled 4 diodes with PressFIT and NTC. It is designed for 3-level and solar applications, offering high speed, low inductive design, and low switching losses. The module boasts an Al2O3 substrate with low thermal resistance, a compact design, and robust PressFIT connection technology with integrated mounting clamps.

Product Attributes

  • Brand: Infineon
  • Product Line: EasyPACK
  • Technology: Trench/Fieldstop IGBT4, Emitter Controlled 4 Diode
  • Connection: PressFIT
  • Features: NTC, Low Inductive Design, Al2O3 Substrate

Technical Specifications

ComponentParameterValueUnitConditions
IGBT, T1 / T4Collector-emitter voltage (VCES)1200VTvj = 25C
Continuous DC collector current (ICDC)25ATH = 60C, Tvj max = 175C
Repetitive peak collector current (ICRM)50AtP = 1 ms
Gate-emitter peak voltage (VGES)±20V
Collector-emitter saturation voltage (VCE sat)2.05 - 2.60VIC = 25 A, VGE = 15 V
Gate threshold voltage (VGEth)5.25 - 6.35VIC = 0.85 mA, VCE = VGE, Tvj = 25C
Gate charge (QG)0.13µCVGE = -15 / 15 V
Input capacitance (Cies)1.43nFf = 1000 kHz, Tvj = 25C, VCE = 25 V, VGE = 0 V
Reverse transfer capacitance (Cres)0.075nFf = 1000 kHz, Tvj = 25C, VCE = 25 V, VGE = 0 V
Collector-emitter cut-off current (ICES)1.0mAVCE = 1200 V, VGE = 0 V, Tvj = 25C
Thermal resistance, junction to heatsink (RthJH)1.45K/Wper IGBT
Diode, D1 / D4Repetitive peak reverse voltage (VRRM)1200VTvj = 25C
Continuous DC forward current (IF)15A
Repetitive peak forward current (IFRM)50AtP = 1 ms
I²t - value40.0 - 34.0A²sVR = 0 V, tP = 10 ms
Forward voltage (VF)1.75 - 2.15VIF = 15 A
Peak reverse recovery current (IRM)36.0 - 38.0AIF = 15 A, - diF/dt = 1300 A/µs (Tvj=150°C), VR = 350 V
Recovered charge (Qr)1.05 - 2.40µCIF = 15 A, - diF/dt = 1300 A/µs (Tvj=150°C), VR = 350 V
Reverse recovery energy (Erec)0.40 - 0.70mJIF = 15 A, - diF/dt = 1300 A/µs (Tvj=150°C), VR = 350 V
Thermal resistance, junction to heatsink (RthJH)2.35K/Wper diode
Operating temperature (Tvj op)-40 - 150°C
IGBT, T2 / T3Collector-emitter voltage (VCES)650VTvj = 25C
Implemented collector current (ICN)30A
Continuous DC collector current (ICDC)15ATH = 100°C, Tvj max = 175°C
Repetitive peak collector current (ICRM)60AtP = 1 ms
Gate-emitter peak voltage (VGES)±20V
Collector-emitter saturation voltage (VCE sat)1.20 - 1.45VIC = 15 A, VGE = 15 V
Gate threshold voltage (VGEth)4.95 - 6.45VIC = 0.30 mA, VCE = VGE, Tvj = 25°C
Gate charge (QG)0.30µCVGE = -15 / 15 V
Input capacitance (Cies)1.65nFf = 1000 kHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
Reverse transfer capacitance (Cres)0.051nFf = 1000 kHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
Thermal resistance, junction to heatsink (RthJH)1.75K/Wper IGBT
Diode, D2 / D3Repetitive peak reverse voltage (VRRM)650VTvj = 25°C
Continuous DC forward current (IF)25A
Repetitive peak forward current (IFRM)50AtP = 1 ms
I²t - value40.0 - 50.0A²sVR = 0 V, tP = 10 ms
Forward voltage (VF)1.65 - 2.15VIF = 25 A
Peak reverse recovery current (IRM)13.0 - 16.0AIF = 25 A, - diF/dt = 1050 A/µs (Tvj=150°C), VR = 350 V
Recovered charge (Qr)0.85 - 1.60µCIF = 25 A, - diF/dt = 1050 A/µs (Tvj=150°C), VR = 350 V
Reverse recovery energy (Erec)0.15 - 0.30mJIF = 25 A, - diF/dt = 1050 A/µs (Tvj=150°C), VR = 350 V
Thermal resistance, junction to heatsink (RthJH)3.30K/Wper diode
Operating temperature (Tvj op)-40 - 150°C

2504101957_Infineon-FS3L25R12W2H3B11_C17252031.pdf

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