Durable Infineon IKW75N65EH5 IGBT module with 650 volt rating and 75 amp collector current capability
Key Attributes
Model Number:
IKW75N65EH5
Product Custom Attributes
Pd - Power Dissipation:
395W
Td(off):
174ns
Td(on):
28ns
Collector-Emitter Breakdown Voltage (Vces):
650V
Reverse Transfer Capacitance (Cres):
17pF
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
3.2V@0.75mA
Gate Charge(Qg):
160nC@15V
Operating Temperature:
-40℃~+175℃
Reverse Recovery Time(trr):
92ns
Switching Energy(Eoff):
900uJ
Turn-On Energy (Eon):
2.3mJ
Input Capacitance(Cies):
4.2nF
Pulsed Current- Forward(Ifm):
300A
Output Capacitance(Coes):
130pF
Mfr. Part #:
IKW75N65EH5
Package:
TO-247-3
Product Description
Product Overview
The IKW75N65EH5 is a high-speed 5th generation IGBT from Infineon, featuring TRENCHSTOPTM 5 technology. It offers best-in-class efficiency in hard switching and resonant topologies, and serves as a plug-and-play replacement for previous generation IGBTs. This device is copacked with a full-rated RAPID 1 fast and soft antiparallel diode, making it suitable for demanding applications.
Product Attributes
- Brand: Infineon
- Technology: TRENCHSTOPTM 5
- Diode Type: RAPID 1 fast and soft antiparallel diode
- Lead Plating: Pb-free
- RoHS Compliant: Yes
- Certifications: Qualified according to JEDEC for target applications
Technical Specifications
| Type | VCE (V) | IC (A) | VCEsat, Tvj=25C (V) | Tvjmax (C) | Marking | Package |
| IKW75N65EH5 | 650 | 75.0 (TC=100C) / 90.0 (TC=25C) | 1.65 | 175 | K75EEH5 | PG-TO247-3 |
| Parameter | Symbol | Conditions | Value | Unit |
| Collector-emitter breakdown voltage | V(BR)CES | VGE = 0V, IC = 0.20mA | 650 | V |
| Collector-emitter saturation voltage | VCEsat | VGE = 15.0V, IC = 75.0A, Tvj = 25C | 1.65 | V |
| Diode forward voltage | VF | VGE = 0V, IF = 75.0A, Tvj = 25C | 1.35 | V |
| Gate-emitter threshold voltage | VGE(th) | IC = 0.75mA, VCE = VGE | 3.2 - 4.8 | V |
| Zero gate voltage collector current | ICES | VCE = 650V, VGE = 0V, Tvj = 25C | 1 | A |
| Gate-emitter leakage current | IGES | VCE = 0V, VGE = 20V | - 100 | nA |
| Transconductance | gfs | VCE = 20V, IC = 75.0A | 104.0 | S |
| Input capacitance | Cies | VCE = 25V, VGE = 0V, f = 1MHz | 4200 | pF |
| Output capacitance | Coes | VCE = 25V, VGE = 0V, f = 1MHz | 130 | pF |
| Reverse transfer capacitance | Cres | VCE = 25V, VGE = 0V, f = 1MHz | 17 | pF |
| Gate charge | QG | VCC = 520V, IC = 75.0A, VGE = 15V | 160.0 | nC |
| Internal emitter inductance | LE | measured 5mm from case | 13.0 | nH |
| Parameter | Symbol | Conditions | Value | Unit |
| Turn-on delay time | td(on) | Tvj = 25C, VCC = 400V, IC = 75.0A, VGE = 0.0/15.0V, RG = 8.0, L = 30nH, C = 25pF | 28 | ns |
| Rise time | tr | Tvj = 25C, VCC = 400V, IC = 75.0A, VGE = 0.0/15.0V, RG = 8.0, L = 30nH, C = 25pF | 33 | ns |
| Turn-off delay time | td(off) | Tvj = 25C, VCC = 400V, IC = 75.0A, VGE = 0.0/15.0V, RG = 8.0, L = 30nH, C = 25pF | 174 | ns |
| Fall time | tf | Tvj = 25C, VCC = 400V, IC = 75.0A, VGE = 0.0/15.0V, RG = 8.0, L = 30nH, C = 25pF | 41 | ns |
| Turn-on energy | Eon | Tvj = 25C, VCC = 400V, IC = 75.0A, VGE = 0.0/15.0V, RG = 8.0, L = 30nH, C = 25pF | 2.30 | mJ |
| Turn-off energy | Eoff | Tvj = 25C, VCC = 400V, IC = 75.0A, VGE = 0.0/15.0V, RG = 8.0, L = 30nH, C = 25pF | 0.90 | mJ |
| Total switching energy | Ets | Tvj = 25C, VCC = 400V, IC = 75.0A, VGE = 0.0/15.0V, RG = 8.0, L = 30nH, C = 25pF | 3.20 | mJ |
| Diode reverse recovery time | trr | Tvj = 25C, VR = 400V, IF = 75.0A, diF/dt = 1000A/s, L = 30nH, C = 25pF | 92 | ns |
| Diode reverse recovery charge | Qrr | Tvj = 25C, VR = 400V, IF = 75.0A, diF/dt = 1000A/s, L = 30nH, C = 25pF | 1.33 | C |
| Diode peak reverse recovery current | Irrm | Tvj = 25C, VR = 400V, IF = 75.0A, diF/dt = 1000A/s, L = 30nH, C = 25pF | 20.5 | A |
Applications
- Uninterruptible power supplies
- Solar converters
- Welding converters
- Mid to high range switching frequency converters
2410121813_Infineon-IKW75N65EH5_C454259.pdf
Related Products
NPN transistor YTL MMBTH10 with 30V collector base breakdown voltage and 650MHz transition frequency
Product OverviewThe MMBTH10 is an NPN transistor in a SOT-23 package, designed for general-purpose applications. It offers a breakdown voltage of 30V (V(BR)CBO) and 25V (V(BR)CEO), with a DC current gain (hFE) of 60 at 10V VCE and 4mA IC. Its low collector-emitter saturation voltage (VCE(sat)) of 0...
DO 214AC SMA package SMA4742AQ Zener diode with low profile design and high forward surge capability
Product OverviewThe SMA4735AQ thru SMA4764AQ series are surface mount Zener diodes featuring a low profile package ideal for automated placement. They offer high forward surge capability and meet MSL level 1 standards. The 'Q' suffix indicates AEC-Q101 qualification, making them suitable for ...
Low voltage N channel MOSFET XCH GSW25N65EF Multi EPI Super Junction for power conversion solutions
Product OverviewThe GSW/GSA25N65EF is a low voltage N-channel Multi-EPI Super-Junction power MOSFET from XCH Semiconductor. It features advanced technology for enhanced characteristics such as fast switching times, low Ciss and Crss, low on-resistance, and excellent avalanche characteristics. This ...
Digital Transistor YANGJIE UMH11N Dual NPN Type with Built In Bias Resistors and Surface Mount Design
Product OverviewThe UMH11N is a dual NPN digital transistor featuring built-in bias resistors, allowing for inverter circuit configuration without external input resistors. It is designed for surface mount applications and is ideally suited for automatic insertion. The epoxy meets UL-94 V-0 ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
