Industrial EasyPACK power module Infineon FS100R12W2T7B11 with emitter controlled diode and NTC sensor
Key Attributes
Model Number:
FS100R12W2T7B11
Product Custom Attributes
Mfr. Part #:
FS100R12W2T7B11
Product Description
Product Overview
The EasyPACK module with TRENCHSTOPIGBT7 and emitter controlled 7 diode and PressFIT/NTC offers high power density and compact design. It features TRENCHSTOPIGBT7 technology for low VCE,sat and overload operation up to 175C. The PressFIT contact technology ensures efficient mechanical integration. This module is qualified for industrial applications.
Product Attributes
- Brand: Infineon
- Product Line: EasyPACK
- Technology: TRENCHSTOP IGBT7, emitter controlled 7 diode, PressFIT, NTC
- Substrate Material: Al2O3
- Insulation: 2.5 kV AC 1 minute
Technical Specifications
| Parameter | Symbol | Note or test condition | Values | Unit |
|---|---|---|---|---|
| General | ||||
| Collector-emitter voltage | VCES | Tvj = 25 C | 1200 | V |
| Implemented collector current | ICN | 100 | A | |
| Continuous DC collector current | ICDC | Tvj max = 175 C, TH = 65 C | 80 | A |
| Repetitive peak collector current | ICRM | tp limited by Tvj op | 200 | A |
| Gate-emitter peak voltage | VGES | ±20 | V | |
| Repetitive peak reverse voltage | VRRM | Tvj = 25 C | 1200 | V |
| Continuous DC forward current | IF | 100 | A | |
| Repetitive peak forward current | IFRM | tP = 1 ms | 200 | A |
| IGBT, Inverter | ||||
| Collector-emitter saturation voltage | VCE sat | IC = 100 A, VGE = 15 V, Tvj = 25 C | 1.50 - 1.80 | V |
| Collector-emitter saturation voltage | VCE sat | IC = 100 A, VGE = 15 V, Tvj = 125 C | 1.64 | V |
| Collector-emitter saturation voltage | VCE sat | IC = 100 A, VGE = 15 V, Tvj = 175 C | 1.72 | V |
| Gate threshold voltage | VGEth | IC = 2.5 mA, VCE = VGE, Tvj = 25 C | 5.15 - 6.45 | V |
| Gate charge | QG | VGE = ±15 V, VCC = 600 V | 1.8 | µC |
| Internal gate resistor | RGint | Tvj = 25 C | 1.5 | Ω |
| Input capacitance | Cies | f = 100 kHz, Tvj = 25 C, VCE = 25 V, VGE = 0 V | 21.7 | nF |
| Reverse transfer capacitance | Cres | f = 100 kHz, Tvj = 25 C, VCE = 25 V, VGE = 0 V | 0.075 | nF |
| Collector-emitter cut-off current | ICES | VCE = 1200 V, VGE = 0 V, Tvj = 25 C | 0.009 | mA |
| Gate-emitter leakage current | IGES | VCE = 0 V, VGE = 20 V, Tvj = 25 C | 100 | nA |
| Turn-on delay time (inductive load) | tdon | IC = 100 A, VCC = 600 V, VGE = ±15 V, RGon = 1.8 Ω | 0.150 - 0.174 | µs |
| Rise time (inductive load) | tr | IC = 100 A, VCC = 600 V, VGE = ±15 V, RGon = 1.8 Ω | 0.041 - 0.047 | µs |
| Turn-off delay time (inductive load) | tdoff | IC = 100 A, VCC = 600 V, VGE = ±15 V, RGoff = 1.8 Ω | 0.300 - 0.420 | µs |
| Fall time (inductive load) | tf | IC = 100 A, VCC = 600 V, VGE = ±15 V, RGoff = 1.8 Ω | 0.100 - 0.250 | µs |
| Turn-on energy loss per pulse | Eon | IC = 100 A, VCC = 600 V, Lσ = 35 nH, VGE = ±15 V, RGon = 1.8 Ω, di/dt = 1700 A/µs | 6 - 10.1 | mJ |
| Turn-off energy loss per pulse | Eoff | IC = 100 A, VCC = 600 V, Lσ = 35 nH, VGE = ±15 V, RGoff = 1.8 Ω, dv/dt = 2850 V/µs | 6 - 12 | mJ |
| SC data | ISC | VGE ≤ 15 V, VCC = 800 V, VCEmax=VCES-LsCE*di/dt, tP ≤ 8 µs | 350 - 370 | A |
| Thermal resistance, junction to heat sink | RthJH | per IGBT, λgrease = 1 W/(m·K) | 0.700 | K/W |
| Temperature under switching conditions | Tvj op | -40 - 175 | °C | |
| Diode, Inverter | ||||
| I2t - value | I2t | tP = 10 ms, VR = 0 V | 860 - 970 | A²s |
| Forward voltage | VF | IF = 100 A, VGE = 0 V, Tvj = 25 °C | 1.72 - 2.10 | V |
| Forward voltage | VF | IF = 100 A, VGE = 0 V, Tvj = 125 °C | 1.59 | V |
| Forward voltage | VF | IF = 100 A, VGE = 0 V, Tvj = 175 °C | 1.52 | V |
| Peak reverse recovery current | IRM | VCC = 600 V, IF = 100 A, VGE = -15 V, -diF/dt = 1700 A/µs | 60 - 91 | A |
| Recovered charge | Qr | VCC = 600 V, IF = 100 A, VGE = -15 V, -diF/dt = 1700 A/µs | 7.1 - 17.3 | µC |
| Reverse recovery energy | Erec | VCC = 600 V, IF = 100 A, VGE = -15 V, -diF/dt = 1700 A/µs | 2.4 - 5.6 | mJ |
| Thermal resistance, junction to heat sink | RthJH | per diode, λgrease = 1 W/(m·K) | 0.966 | K/W |
| Temperature under switching conditions | Tvj op | -40 - 175 | °C | |
| NTC-Thermistor | ||||
| Rated resistance | R25 | TNTC = 25 °C | 5 | kΩ |
| Deviation of R100 | ΔR/R | TNTC = 100 °C, R100 = 493 Ω | -5 - 5 | % |
| Power dissipation | P25 | TNTC = 25 °C | 20 | mW |
| B-value | B25/50 | R2 = R25 exp[B25/50(1/T2-1/(298,15 K))] | 3375 | K |
| B-value | B25/80 | R2 = R25 exp[B25/80(1/T2-1/(298,15 K))] | 3411 | K |
| B-value | B25/100 | R2 = R25 exp[B25/100(1/T2-1/(298,15 K))] | 3433 | K |
| Package | ||||
| Isolation test voltage | VISOL | RMS, f = 50 Hz, t = 1 min | 2.5 | kV |
| Creepage distance | dCreep | terminal to heatsink | 11.5 | mm |
| Creepage distance | dCreep | terminal to terminal | 6.3 | mm |
| Clearance | dClear | terminal to heatsink | 10.0 | mm |
| Clearance | dClear | terminal to terminal | 5.0 | mm |
| Comparative tracking index | CTI | > 200 | ||
| Relative thermal index (electrical) | RTI housing | 140 | °C | |
| Stray inductance module | LsCE | 20 | nH | |
| Module lead resistance, terminals | RCC'+EE' | TH = 25 °C, per switch | 4 | mΩ |
| Storage temperature | Tstg | -40 - 125 | °C | |
| Mounting force per clamp | F | 40 - 80 | N | |
| Weight | G | 39 | g | |
Potential Applications
- Auxiliary inverters
- Servo drives
- Air conditioning
- Motor drives
- UPS systems
2504101957_Infineon-FS100R12W2T7B11_C17529699.pdf
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