IGBT device Infineon IKP20N65F5 with fast switching characteristics and qualified to JEDEC standards
Key Attributes
Model Number:
IKP20N65F5
Product Custom Attributes
Td(off):
165ns
Pd - Power Dissipation:
125W
Td(on):
20ns
Collector-Emitter Breakdown Voltage (Vces):
650V
Reverse Transfer Capacitance (Cres):
5pF
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
3.2V@0.2mA
Gate Charge(Qg):
48nC@15V
Operating Temperature:
-40℃~+175℃
Reverse Recovery Time(trr):
53ns
Switching Energy(Eoff):
60uJ
Turn-On Energy (Eon):
160uJ
Input Capacitance(Cies):
1.2nF
Pulsed Current- Forward(Ifm):
60A
Output Capacitance(Coes):
30pF
Mfr. Part #:
IKP20N65F5
Package:
TO-220-3
Product Description
Product Overview
The IKP20N65F5 is a high-speed 5 FAST IGBT from Infineon's TRENCHSTOPTM 5 technology, copacked with a RAPID 1 fast and soft anti-parallel diode. This DuoPack IGBT offers best-in-class efficiency in hard switching and resonant topologies, a 650V breakdown voltage, and low Qg. It is designed for applications requiring high-speed switching and is qualified according to JEDEC standards. The product is Pb-free and RoHS compliant.
Product Attributes
- Brand: Infineon
- Technology: TRENCHSTOPTM 5
- Diode Type: RAPID 1
- Certifications: JEDEC qualified, RoHS compliant
- Lead Plating: Pb-free
Technical Specifications
| Type | VCE | IC | VCEsat (Tvj=25C) | Tvjmax | Marking | Package |
| IKP20N65F5 | 650V | 20A | 1.6V | 175C | K20EF5 | PG-TO220-3 |
Maximum Ratings
| Parameter | Symbol | Value | Unit |
| Collector-emitter voltage | VCE | 650 | V |
| DC collector current, TC = 25C | IC | 42.0 | A |
| DC collector current, TC = 100C | IC | 21.0 | A |
| Pulsed collector current | ICpuls | 60.0 | A |
| Turn off safe operating area | - | -60.0 | A |
| Diode forward current, TC = 25C | IF | 20.0 | A |
| Diode forward current, TC = 100C | IF | 10.0 | A |
| Diode pulsed current | IFpuls | 60.0 | A |
| Gate-emitter voltage | VGE | 20 | V |
| Transient Gate-emitter voltage | - | 30 | V |
| Power dissipation, TC = 25C | Ptot | 125.0 | W |
| Power dissipation, TC = 100C | Ptot | 63.0 | W |
| Operating junction temperature | Tvj | -40...+175 | C |
| Storage temperature | Tstg | -55...+150 | C |
| Soldering temperature | - | 260 | C |
| Mounting torque | M3 | 0.6 | Nm |
Thermal Resistance
| Parameter | Symbol | Conditions | Max. Value | Unit |
| IGBT thermal resistance, junction - case | Rth(j-c) | - | 1.20 | K/W |
| Diode thermal resistance, junction - case | Rth(j-c) | - | 2.20 | K/W |
| Thermal resistance junction - ambient | Rth(j-a) | - | 62 | K/W |
Electrical Characteristics (Tvj = 25C, unless otherwise specified)
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
| Collector-emitter breakdown voltage | V(BR)CES | VGE = 0V, IC = 0.20mA | 650 | - | - | V |
| Collector-emitter saturation voltage | VCEsat | VGE = 15.0V, IC = 20.0A | - | 1.60 | 2.10 | V |
| Collector-emitter saturation voltage | VCEsat | VGE = 15.0V, IC = 20.0A, Tvj = 125C | - | 1.80 | - | V |
| Collector-emitter saturation voltage | VCEsat | VGE = 15.0V, IC = 20.0A, Tvj = 175C | - | 1.90 | - | V |
| Diode forward voltage | VF | VGE = 0V, IF = 10.0A | - | 1.45 | 1.80 | V |
| Diode forward voltage | VF | VGE = 0V, IF = 10.0A, Tvj = 125C | - | 1.40 | - | V |
| Diode forward voltage | VF | VGE = 0V, IF = 10.0A, Tvj = 175C | - | 1.40 | - | V |
| Gate-emitter threshold voltage | VGE(th) | IC = 0.20mA, VCE = VGE | 3.2 | 4.0 | 4.8 | V |
| Zero gate voltage collector current | ICES | VCE = 650V, VGE = 0V, Tvj = 25C | - | - | 40.0 | A |
| Zero gate voltage collector current | ICES | VCE = 650V, VGE = 0V, Tvj = 175C | - | - | 4000.0 | A |
| Gate-emitter leakage current | IGES | VCE = 0V, VGE = 20V | - | - | 100 | nA |
| Transconductance | gfs | VCE = 20V, IC = 20.0A | - | 24.0 | - | S |
Dynamic Characteristics (Tvj = 25C, unless otherwise specified)
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
| Input capacitance | Cies | VCE = 25V, VGE = 0V, f = 1MHz | - | 1200 | - | pF |
| Output capacitance | Coes | VCE = 25V, VGE = 0V, f = 1MHz | - | 30 | - | pF |
| Reverse transfer capacitance | Cres | VCE = 25V, VGE = 0V, f = 1MHz | - | 5 | - | pF |
| Gate charge | QG | VCC = 520V, IC = 20.0A, VGE = 15V | - | 48.0 | - | nC |
| Internal emitter inductance | LE | measured 5mm from case | - | 7.0 | - | nH |
Switching Characteristics (Inductive Load)
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
| Turn-on delay time | td(on) | Tvj = 25C, VCC = 400V, IC = 10.0A, VGE = 0.0/15.0V, rG = 32.0, L = 30nH, C = 30pF | - | 20 | - | ns |
| Rise time | tr | Tvj = 25C, VCC = 400V, IC = 10.0A, VGE = 0.0/15.0V, rG = 32.0, L = 30nH, C = 30pF | - | 11 | - | ns |
| Turn-off delay time | td(off) | Tvj = 25C, VCC = 400V, IC = 10.0A, VGE = 0.0/15.0V, rG = 32.0, L = 30nH, C = 30pF | - | 165 | - | ns |
| Fall time | tf | Tvj = 25C, VCC = 400V, IC = 10.0A, VGE = 0.0/15.0V, rG = 32.0, L = 30nH, C = 30pF | - | 17 | - | ns |
| Turn-on energy | Eon | Tvj = 25C, VCC = 400V, IC = 10.0A, VGE = 0.0/15.0V, rG = 32.0, L = 30nH, C = 30pF | - | 0.16 | - | mJ |
| Turn-off energy | Eoff | Tvj = 25C, VCC = 400V, IC = 10.0A, VGE = 0.0/15.0V, rG = 32.0, L = 30nH, C = 30pF | - | 0.06 | - | mJ |
| Total switching energy | Ets | Tvj = 25C, VCC = 400V, IC = 10.0A, VGE = 0.0/15.0V, rG = 32.0, L = 30nH, C = 30pF | - | 0.22 | - | mJ |
| Turn-on delay time | td(on) | Tvj = 25C, VCC = 400V, IC = 2.0A, VGE = 0.0/15.0V, rG = 32.0, L = 30nH, C = 30pF | - | 18 | - | ns |
| Rise time | tr | Tvj = 25C, VCC = 400V, IC = 2.0A, VGE = 0.0/15.0V, rG = 32.0, L = 30nH, C = 30pF | - | 3 | - | ns |
| Turn-off delay time | td(off) | Tvj = 25C, VCC = 400V, IC = 2.0A, VGE = 0.0/15.0V, rG = 32.0, L = 30nH, C = 30pF | - | 170 | - | ns |
| Fall time | tf | Tvj = 25C, VCC = 400V, IC = 2.0A, VGE = 0.0/15.0V, rG = 32.0, L = 30nH, C = 30pF | - | 30 | - | ns |
| Turn-on energy | Eon | Tvj = 25C, VCC = 400V, IC = 2.0A, VGE = 0.0/15.0V, rG = 32.0, L = 30nH, C = 30pF | - | 0.04 | - | mJ |
| Turn-off energy | Eoff | Tvj = 25C, VCC = 400V, IC = 2.0A, VGE = 0.0/15.0V, rG = 32.0, L = 30nH, C = 30pF | - | 0.02 | - | mJ |
| Total switching energy | Ets | Tvj = 25C, VCC = 400V, IC = 2.0A, VGE = 0.0/15.0V, rG = 32.0, L = 30nH, C = 30pF | - | 0.06 | - | mJ |
| Diode reverse recovery time | trr | Tvj = 25C, VR = 400V, IF = 10.0A, diF/dt = 1300A/s | - | 53 | - | ns |
| Diode reverse recovery charge | Qrr | Tvj = 25C, VR = 400V, IF = 10.0A, diF/dt = 1300A/s | - | 0.28 | - | C |
| Diode peak reverse recovery current | Irrm | Tvj = 25C, VR = 400V, IF = 10.0A, diF/dt = 1300A/s | - | 10.5 | - | A |
| Diode peak rate of fall of reverse recovery current | dirr/dt | Tvj = 25C, VR = 400V, IF = 10.0A, diF/dt = 1300A/s | - | -235 | - | A/s |
| Diode reverse recovery time | trr | Tvj = 25C, VR = 400V, IF = 2.0A, diF/dt = 1000A/s | - | 25 | - | ns |
| Diode reverse recovery charge | Qrr | Tvj = 25C, VR = 400V, IF = 2.0A, diF/dt = 1000A/s | - | 0.12 | - | C |
| Diode peak reverse recovery current | Irrm | Tvj = 25C, VR = 400V, IF = 2.0A, diF/dt = 1000A/s | - | 8.1 | - | A |
| Diode peak rate of fall of reverse recovery current | dirr/dt | Tvj = 25C, VR = 400V, IF = 2.0A, diF/dt = 1000A/s | - | -630 | - | A/s |
| Turn-on delay time | td(on) | Tvj = 150C, VCC = 400V, IC = 10.0A, VGE = 0.0/15.0V, rG = 32.0, L = 30nH, C = 30pF | - | 19 | - | ns |
| Rise time | tr | Tvj = 150C, VCC = 400V, IC = 10.0A, VGE = 0.0/15.0V, rG = 32.0, L = 30nH, C = 30pF | - | 13 | - | ns |
| Turn-off delay time | td(off) | Tvj = 150C, VCC = 400V, IC = 10.0A, VGE = 0.0/15.0V, rG = 32.0, L = 30nH, C = 30pF | - | 200 | - | ns |
| Fall time | tf | Tvj = 150C, VCC = 400V, IC = 10.0A, VGE = 0.0/15.0V, rG = 32.0, L = 30nH, C = 30pF | - | 11 | - | ns |
| Turn-on energy | Eon | Tvj = 150C, VCC = 400V, IC = 10.0A, VGE = 0.0/15.0V, rG = 32.0, L = 30nH, C = 30pF | - | 0.26 | - | mJ |
| Turn-off energy | Eoff | Tvj = 150C, VCC = 400V, IC = 10.0A, VGE = 0.0/15.0V, rG = 32.0, L = 30nH, C = 30pF | - | 0.11 | - | mJ |
| Total switching energy | Ets | Tvj = 150C, VCC = 400V, IC = 10.0A, VGE = 0.0/15.0V, rG = 32.0, L = 30nH, C = 30pF | - | 0.37 | - | mJ |
| Turn-on delay time | td(on) | Tvj = 150C, VCC = 400V, IC = 2.0A, VGE = 0.0/15.0V, rG = 32.0, L = 30nH, C = 30pF | - | 16 | - | ns |
| Rise time | tr | Tvj = 150C, VCC = 400V, IC = 2.0A, VGE = 0.0/15.0V, rG = 32.0, L = 30nH, C = 30pF | - | 4 | - | ns |
| Turn-off delay time | td(off) | Tvj = 150C, VCC = 400V, IC = 2.0A, VGE = 0.0/15.0V, rG = 32.0, L = 30nH, C = 30pF | - | 230 | - | ns |
| Fall time | tf | Tvj = 150C, VCC = 400V, IC = 2.0A, VGE = 0.0/15.0V, rG = 32.0, L = 30nH, C = 30pF | - | 43 | - | ns |
| Turn-on energy | Eon | Tvj = 150C, VCC = 400V, IC = 2.0A, VGE = 0.0/15.0V, rG = 32.0, L = 30nH, C = 30pF | - | 0.07 | - | mJ |
| Turn-off energy | Eoff | Tvj = 150C, VCC = 400V, IC = 2.0A, VGE = 0.0/15.0V, rG = 32.0, L = 30nH, C = 30pF | - | 0.02 | - | mJ |
| Total switching energy | Ets | Tvj = 150C, VCC = 400V, IC = 2.0A, VGE = 0.0/15.0V, rG = 32.0, L = 30nH, C = 30pF | - | 0.09 | - | mJ |
| Diode reverse recovery time | trr | Tvj = 150C, VR = 400V, IF = 10.0A, diF/dt = 1000A/s | - | 87 | - | ns |
| Diode reverse recovery charge | Qrr | Tvj = 150C, VR = 400V, IF = 10.0A, diF/dt = 1000A/s | - | 0.63 | - | C |
| Diode peak reverse recovery current | Irrm | Tvj = 150C, VR = 400V, IF = 10.0A, diF/dt = 1000A/s | - | 13.1 | - | A |
| Diode peak rate of fall of reverse recovery current | dirr/dt | Tvj = 150C, VR = 400V, IF = 10.0A, diF/dt = 1000A/s | - | -186 | - | A/s |
| Diode reverse recovery time | trr | Tvj = 150C, VR = 400V, IF = 2.0A, diF/dt = 800A/s | - | 45 | - | ns |
| Diode reverse recovery charge | Qrr | Tvj = 150C, VR = 400V, IF = 2.0A, diF/dt = 800A/s | - | 0.29 | - | C |
| Diode peak reverse recovery current | Irrm | Tvj = 150C, VR = 400V, IF = 2.0A, diF/dt = 800A/s | - | 11.3 | - | A |
| Diode peak rate of fall of reverse recovery current | dirr/dt | Tvj = 150C, VR = 400V, IF = 2.0A, diF/dt = 800A/s | - | -440 | - | A/s |
Applications
- Solar converters
- Uninterruptible power supplies
- Welding converters
- Mid to high range switching frequency converters
2410121744_Infineon-IKP20N65F5_C536194.pdf
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