Infineon FS75R12W2T7 B11 EasyPACK module designed for high power density and operation in motor drives
Key Attributes
Model Number:
FS75R12W2T7_B11
Product Custom Attributes
Td(off):
270ns
Td(on):
130ns
Collector-Emitter Breakdown Voltage (Vces):
1.2kV
Input Capacitance(Cies):
15.1nF@25V
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
5.15V@1.7mA
Gate Charge(Qg):
1.25uC
Operating Temperature:
-40℃~+175℃
Switching Energy(Eoff):
5.47mJ
Turn-On Energy (Eon):
4.92mJ
Mfr. Part #:
FS75R12W2T7_B11
Package:
Through Hole,62.8x56.7mm
Product Description
Product Overview
The FS75R12W2T7_B11 EasyPACK module features TRENCHSTOP IGBT7 and Emitter Controlled 7 Diode with PressFIT technology and an integrated NTC thermistor. It offers low VCEsat, overload operation up to 175C, and a compact design with high power density. Suitable for auxiliary inverters, air conditioning, motor drives, servo drives, and UPS systems.
Product Attributes
- Brand: Infineon
- Technology: TRENCHSTOP IGBT7, Emitter Controlled 7 Diode, PressFIT
- Substrate Material: Al2O3
- Certifications: IEC 61140 (Class 1 basic insulation)
Technical Specifications
| Parameter | Value | Conditions | Unit |
| IGBT, Inverter | |||
| Collector-emitter voltage | 1200 | Tvj = 25C | V |
| Collector current (nominal) | 75 | IC nom | A |
| Collector current (repetitive peak) | 150 | ICRM, tP = 1 ms | A |
| Collector current (continuous DC) | 65 | TH = 65C, Tvj max = 175C | A |
| Gate-emitter peak voltage | +/-20 | V | |
| Collector-emitter saturation voltage | 1.55 - 1.77 | IC = 75 A, VGE = 15 V, Tvj = 25C to 175C | V |
| Gate threshold voltage | 5.15 - 6.45 | IC = 1.70 mA, VCE = VGE, Tvj = 25C | V |
| Gate charge | 1.25 | VGE = -15 / 15 V, VCE = 600 V | C |
| Input capacitance | 15.1 | f = 100 kHz, Tvj = 25C, VCE = 25 V, VGE = 0 V | nF |
| Reverse transfer capacitance | 0.053 | f = 100 kHz, Tvj = 25C, VCE = 25 V, VGE = 0 V | nF |
| Collector-emitter cut-off current | 0.013 | VCE = 1200 V, VGE = 0 V, Tvj = 25C | mA |
| Gate-emitter leakage current | 100 | VCE = 0 V, VGE = 20 V, Tvj = 25C | nA |
| Turn-on delay time | 0.13 - 0.158 | IC = 75 A, VCE = 600 V, VGE = -15 / 15 V, RGon = 2.2 , Tvj = 25C to 175C | s |
| Rise time | 0.03 - 0.04 | IC = 75 A, VCE = 600 V, VGE = -15 / 15 V, RGon = 2.2 , Tvj = 25C to 175C | s |
| Turn-off delay time | 0.27 - 0.39 | IC = 75 A, VCE = 600 V, VGE = -15 / 15 V, RGoff = 2.2 , Tvj = 25C to 175C | s |
| Fall time | 0.12 - 0.27 | IC = 75 A, VCE = 600 V, VGE = -15 / 15 V, RGoff = 2.2 , Tvj = 25C to 175C | s |
| Turn-on energy loss per pulse | 4.92 - 8.99 | IC = 75 A, VCE = 600 V, L = 35 nH, di/dt = 1700 A/s, VGE = -15 / 15 V, RGon = 2.2 , Tvj = 25C to 175C | mJ |
| Turn-off energy loss per pulse | 5.47 - 9.67 | IC = 75 A, VCE = 600 V, L = 35 nH, du/dt = 3000 V/s, VGE = -15 / 15 V, RGoff = 2.2 , Tvj = 25C to 175C | mJ |
| Short circuit data | 240 - 260 | VGE 15 V, VCC = 800 V, VCEmax = VCES - LsCE di/dt, tP 7 s or 8 s, Tvj = 150C or 175C | A |
| Thermal resistance, junction to heatsink | 0.803 | per IGBT | K/W |
| Operating temperature | -40 - 175 | C | |
| Diode, Inverter | |||
| Repetitive peak reverse voltage | 1200 | Tvj = 25C | V |
| Continuous DC forward current | 75 | IF | A |
| Repetitive peak forward current | 150 | IFRM, tP = 1 ms | A |
| It value | 800 - 1000 | VR = 0 V, tP = 10 ms, Tvj = 125C or 175C | As |
| Forward voltage | 1.52 - 1.72 | IF = 75 A, VGE = 0 V, Tvj = 25C to 175C | V |
| Peak reverse recovery current | 59.0 - 100 | IF = 75 A, -diF/dt = 1700 A/s, VR = 600 V, VGE = -15 V, Tvj = 25C to 175C | A |
| Recovered charge | 7.03 - 13.7 | IF = 75 A, -diF/dt = 1700 A/s, VR = 600 V, VGE = -15 V, Tvj = 25C to 175C | C |
| Reverse recovery energy | 2.92 - 4.93 | IF = 75 A, -diF/dt = 1700 A/s, VR = 600 V, VGE = -15 V, Tvj = 25C to 175C | mJ |
| Thermal resistance, junction to heatsink | 1.12 | per diode | K/W |
| Operating temperature | -40 - 175 | C | |
| NTC-Thermistor | |||
| Rated resistance | 5.00 | TNTC = 25C | k |
| Deviation of R100 | -5 - 5 | TNTC = 100C, R100 = 493 | % |
| Power dissipation | 20.0 | TNTC = 25C | mW |
| B-Value (B25/50) | 3375 | K | |
| B-Value (B25/80) | 3411 | K | |
| B-Value (B25/100) | 3433 | K | |
| Module | |||
| Isolation test voltage | 2.5 | RMS, f = 50 Hz, t = 1 min. | kV |
| Creepage distance (terminal to heatsink) | 11.5 | mm | |
| Clearance (terminal to heatsink) | 10.0 | mm | |
| Comparative tracking index | > 200 | ||
| Stray inductance module | 40 | LsCE | nH |
| Module lead resistance (terminals - chip) | 4.00 | TH = 25C, per switch | m |
| Storage temperature | -40 - 125 | C | |
| Mounting force (per clamp) | 40 - 80 | F | N |
| Weight | 39 | g | |
2411220657_Infineon-FS75R12W2T7-B11_C535562.pdf
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