Infineon IGW40N60TP 600V IGBT featuring TRENCHSTOP technology low EMI and short tail current for converters
Key Attributes
Model Number:
IGW40N60TP
Product Custom Attributes
Td(off):
222ns
Pd - Power Dissipation:
246W
Td(on):
18ns
Collector-Emitter Breakdown Voltage (Vces):
600V
Reverse Transfer Capacitance (Cres):
48pF
Input Capacitance(Cies):
1.4nF
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
4.1V@0.64mA
Gate Charge(Qg):
177nC@15V
Output Capacitance(Coes):
60pF
Switching Energy(Eoff):
610uJ
Turn-On Energy (Eon):
1.06mJ
Mfr. Part #:
IGW40N60TP
Package:
TO-247-3
Product Description
Product Overview
The IGW40N60TP is a 600V DuoPack IGBT from Infineon's TRENCHSTOPTM Performance series. It utilizes TRENCHSTOPTM technology, offering very low VCEsat, low turn-off losses, short tail current, and low EMI. This IGBT is qualified according to JEDEC for target applications and is RoHS compliant. It is suitable for applications such as drives, solar inverters, uninterruptible power supplies, and converters with medium switching frequency.
Product Attributes
- Brand: Infineon
- Technology: TRENCHSTOPTM Performance
- Compliance: Pb-free lead plating; RoHS compliant
- Certifications: Qualified according to JEDEC for target applications
Technical Specifications
| Type | VCE | IC | VCEsat, Tvj=25C | Tvjmax | Marking | Package |
| IGW40N60TP | 600V | 40A | 1.6V | 175C | G40DTP | PG-TO247-3 |
| Parameter | Symbol | Conditions | Value | Unit |
| Collector-emitter breakdown voltage | V(BR)CES | VGE = 0V, IC = 2.00mA | 600 | V |
| Collector-emitter saturation voltage | VCEsat | VGE = 15.0V, IC = 40.0A, Tvj = 25C | 1.60 | V |
| Collector-emitter saturation voltage | VCEsat | VGE = 15.0V, IC = 40.0A, Tvj = 175C | 1.94 | V |
| Gate-emitter threshold voltage | VGE(th) | IC = 0.64mA, VCE = VGE | 4.1 - 5.7 | V |
| Zero gate voltage collector current | ICES | VCE = 600V, VGE = 0V, Tvj = 25C | - | A |
| Zero gate voltage collector current | ICES | VCE = 600V, VGE = 0V, Tvj = 175C | 40 | A |
| Gate-emitter leakage current | IGES | VCE = 0V, VGE = 20V | - 100 | nA |
| Transconductance | gfs | VCE = 20V, IC = 40.0A | 40.0 | S |
| Input capacitance | Cies | VCE = 25V, VGE = 0V, f = 1MHz | 1400 | pF |
| Output capacitance | Coes | VCE = 25V, VGE = 0V, f = 1MHz | 60 | pF |
| Reverse transfer capacitance | Cres | VCE = 25V, VGE = 0V, f = 1MHz | 48 | pF |
| Gate charge | QG | VCC = 480V, IC = 40.0A, VGE = 15V | 177.0 | nC |
| Internal emitter inductance | LE | measured 5mm from case | 13.0 | nH |
| Collector-emitter voltage, Tvj 25C | VCE | 600 | V | |
| DC collector current, limited by Tvjmax, TC = 25C | IC | 67.0 | A | |
| DC collector current, limited by Tvjmax, TC = 100C | IC | 48.0 | A | |
| Pulsed collector current, tp limited by Tvjmax | ICpuls | 120.0 | A | |
| Turn off safe operating area | VCE 600V, Tvj 175C, tp = 1s | 120.0 | A | |
| Gate-emitter voltage | VGE | 20 | V | |
| Short circuit withstand time | tSC | VGE = 15.0V, VCC 400V, Tvj = 150C | 5 | s |
| Power dissipation, TC = 25C | Ptot | 246.0 | W | |
| Power dissipation, TC = 100C | Ptot | 123.0 | W | |
| Operating junction temperature | Tvj | -40...+175 | C | |
| Storage temperature | Tstg | -55...+150 | C | |
| Soldering temperature, wave soldering 1.6mm from case for 10s | 260 | C | ||
| Mounting torque, M3 screw | M | Maximum of mounting processes | 0.6 | Nm |
| IGBT thermal resistance, junction - case | Rth(j-c) | 0.41 - 0.61 | K/W | |
| Turn-on delay time | td(on) | Tvj = 25C, VCC = 400V, IC = 40.0A, VGE = 15.0V, RG = 10.1 | 18 | ns |
| Rise time | tr | Tvj = 25C, VCC = 400V, IC = 40.0A, VGE = 15.0V, RG = 10.1 | 30 | ns |
| Turn-off delay time | td(off) | Tvj = 25C, VCC = 400V, IC = 40.0A, VGE = 15.0V, RG = 10.1 | 222 | ns |
| Fall time | tf | Tvj = 25C, VCC = 400V, IC = 40.0A, VGE = 15.0V, RG = 10.1 | 18 | ns |
| Turn-on energy | Eon | Tvj = 25C, VCC = 400V, IC = 40.0A, VGE = 15.0V, RG = 10.1 | 1.06 | mJ |
| Turn-off energy | Eoff | Tvj = 25C, VCC = 400V, IC = 40.0A, VGE = 15.0V, RG = 10.1 | 0.61 | mJ |
| Total switching energy | Ets | Tvj = 25C, VCC = 400V, IC = 40.0A, VGE = 15.0V, RG = 10.1 | 1.67 | mJ |
| Turn-on delay time | td(on) | Tvj = 175C, VCC = 400V, IC = 40.0A, VGE = 15.0V, RG = 10.1 | 19 | ns |
| Rise time | tr | Tvj = 175C, VCC = 400V, IC = 40.0A, VGE = 15.0V, RG = 10.1 | 30 | ns |
| Turn-off delay time | td(off) | Tvj = 175C, VCC = 400V, IC = 40.0A, VGE = 15.0V, RG = 10.1 | 273 | ns |
| Fall time | tf | Tvj = 175C, VCC = 400V, IC = 40.0A, VGE = 15.0V, RG = 10.1 | 47 | ns |
| Turn-on energy | Eon | Tvj = 175C, VCC = 400V, IC = 40.0A, VGE = 15.0V, RG = 10.1 | 1.63 | mJ |
| Turn-off energy | Eoff | Tvj = 175C, VCC = 400V, IC = 40.0A, VGE = 15.0V, RG = 10.1 | 1.05 | mJ |
| Total switching energy | Ets | Tvj = 175C, VCC = 400V, IC = 40.0A, VGE = 15.0V, RG = 10.1 | 2.68 | mJ |
2410121744_Infineon-IGW40N60TP_C536100.pdf
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