EasyPIM IGBT module Infineon FP10R12W1T4 featuring NTC temperature detection and low VCEsat for power management
Key Attributes
Model Number:
FP10R12W1T4
Product Custom Attributes
Td(off):
180ns
Pd - Power Dissipation:
105W
Td(on):
45ns
Collector-Emitter Breakdown Voltage (Vces):
1.2kV
Reverse Transfer Capacitance (Cres):
0.024nF
Input Capacitance(Cies):
600pF
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
5.2V@0.3mA
Operating Temperature:
-40℃~+150℃
Pulsed Current- Forward(Ifm):
300A
Switching Energy(Eoff):
550uJ
Turn-On Energy (Eon):
900uJ
Mfr. Part #:
FP10R12W1T4
Package:
Through Hole,62.8x33.8mm
Product Description
Product Overview
The FP10R12W1T4 is an EasyPIM IGBT module featuring fourth-generation Trench/Fieldstop IGBT4 and an emitter-controlled 4 diode with NTC temperature detection. It offers low switching losses, a positive temperature coefficient for VCEsat, and a low VCEsat. The module boasts a compact design with an Al2O3 substrate for low thermal resistance and robust mounting via integrated clamps. Suitable for auxiliary inverters, air conditioning, and motor drives.
Product Attributes
- Brand: EasyPIM
- Technology: Trench/Fieldstop IGBT4, Emitter Controlled 4 diode
- Certifications: UL approved (E83335)
- Features: NTC temperature detection
Technical Specifications
| Parameter | IGBT, Inverter / Brake-Chopper | Diode, Inverter / Brake-Chopper | Diode, Rectifier |
|---|---|---|---|
| VCES (V) | 1200 | - | - |
| IC nom (A) | 10 | - | - |
| ICRM (A) | 20 | - | - |
| Ptot (W) | 105 | - | - |
| VGES (V) | +/-20 | - | - |
| VCEsat (V) | 1.85 - 2.25 (at 10A, 15V) | - | - |
| VGEth (V) | 5.2 - 6.4 (at 0.30mA) | - | - |
| QG (C) | 0.09 | - | - |
| RGint () | 0.0 | - | - |
| Cies (nF) | 0.60 | - | - |
| Cres (nF) | 0.024 | - | - |
| ICES (mA) | 1.0 | - | - |
| IGES (nA) | 400 | - | - |
| td on (s) | 0.045 | - | - |
| tr (s) | 0.044 - 0.063 | - | - |
| td off (s) | 0.18 - 0.275 | - | - |
| tf (s) | 0.165 - 0.225 | - | - |
| Eon (mJ) | 0.90 - 1.55 | - | - |
| Eoff (mJ) | 0.55 - 0.87 | - | - |
| ISC (A) | 35 | - | - |
| RthJC (K/W) | 1.25 - 1.40 (per IGBT) | 1.75 - 1.90 (per diode) | 1.20 - 1.35 (per diode) |
| RthCH (K/W) | 1.15 (per IGBT) | 1.30 (per diode) | 1.15 (per diode) |
| Tvj op (C) | -40 to 150 | -40 to 150 | -40 to 150 |
| VRRM (V) | - | 1200 | 1600 |
| IF (A) | - | 10 | - |
| IFRM (A) | - | 20 | - |
| It (As) | - | 16.0 - 14.0 | 450 - 300 |
| VF (V) | - | 1.75 - 2.25 (at 10A) | 0.80 (at 10A) |
| IRM (A) | - | 12.0 - 8.00 | - |
| Qr (C) | - | 0.90 - 1.90 | - |
| Erec (mJ) | - | 0.24 - 0.59 | - |
| IFRMax (A) | - | - | 30 (RMS per chip) |
| IRMSM (A) | - | - | 30 (RMS at rectifier output) |
| IFSM (A) | - | - | 300 - 245 (surge) |
| IR (mA) | - | - | 1.00 (reverse current) |
2411220530_Infineon-FP10R12W1T4_C541162.pdf
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