Power Transistor ISC 2SA940 Silicon PNP Type Designed for Amplifier and Vertical Output Applications
ISC Silicon PNP Power Transistor 2SA940
The 2SA940 is a PNP power transistor designed for general-purpose power amplifier and vertical output applications. It offers a high collector-emitter breakdown voltage of -150V and a DC current gain ranging from 40 to 140 at -0.5A. This transistor is a complement to the 2SC2073 type, ensuring robust device performance and reliable operation with minimal lot-to-lot variations.
Product Attributes
- Brand: ISC
- Trademark: ISC & ISCsemi
- Material: Silicon
- Type: PNP Power Transistor
Technical Specifications
| Parameter | Conditions | Min | Typ. | Max | Unit |
| V(BR)CEO | IC= -10mA ; IB= 0 | -150 | V | ||
| V(BR)CBO | IC= -1mA ; IE= 0 | -150 | V | ||
| V(BR)EBO | IE= -1mA ; IC= 0 | -5 | V | ||
| VCE(sat) | IC= -0.5A; IB= -50mA | -1.5 | V | ||
| VBE(on) | IC= -0.5A ; VCE= -5V | -0.85 | V | ||
| ICBO | VCB= -120V ; IE= 0 | -10 | A | ||
| IEBO | VEB= -5V; IC= 0 | -10 | A | ||
| hFE | IC= -0.5A ; VCE= -10V | 40 | 140 | ||
| fT | IC= -0.5A;VCE= -10V;ftest= 1MHz | 4 | MHz | ||
| PC | @ TC=25 | 25 | W | ||
| TJ | 150 | ||||
| Tstg | -55 | 150 | |||
| Rth j-c | 5.0 | /W |
2411192312_ISC-2SA940_C491404.pdf
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