Low voltage N Channel MOSFET ISC 2SK2313 featuring 60A drain current and fast switching speed for DC DC converters
Key Attributes
Model Number:
2SK2313
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
60A
RDS(on):
11mΩ@10V,30A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2V
Pd - Power Dissipation:
150W
Mfr. Part #:
2SK2313
Package:
TO-3PN
Product Description
Product Overview
The ISC 2SK2313 is an N-Channel MOSFET transistor designed for low voltage, high-speed applications. It features a high drain current of 60A, a drain-source voltage of 60V (Min), fast switching speed, and is 100% avalanche tested, ensuring robust device performance and reliable operation. This MOSFET is ideal for chopper regulators, DC-DC converters, and motor drive applications.
Product Attributes
- Brand: ISC
- Trademark: ISC & ISCsemi
Technical Specifications
| Symbol | Parameter | Conditions | Min | Typ. | Max | Unit |
| VDSS | Drain-Source Voltage (VGS=0) | 60 | V | |||
| VGS | Gate-Source Voltage | ±20 | V | |||
| ID | Drain Current-continuous@ TC=25 | 60 | A | |||
| Ptot | Total Dissipation@TC=25 | 150 | W | |||
| Tj | Max. Operating Junction Temperature | 150 | ||||
| Tstg | Storage Temperature Range | -55 | ~ | 150 | ||
| Rth j-c | Thermal Resistance,Junction to Case | 0.83 | /W | |||
| V(BR)DSS | Drain-Source Breakdown Voltage | VGS=0; ID= 10mA | 60 | V | ||
| VGS(TH) | Gate Threshold Voltage | VDS=VGS,ID=250µA | 0.8 | 2 | V | |
| RDS(ON) | Drain-Source On-stage Resistance | VGS= 10V; ID=30A | 11 | mΩ | ||
| IGSS | Gate Source Leakage Current | VGS= ±16V; VDS= 0 | ±10 | µA | ||
| IDSS | Zero Gate Voltage Drain Current | VDS=60V; VGS= 0 | 100 | µA | ||
| VSD | Diode Forward Voltage | IS=30A; VGS=0 | 1.2 | V |
2411220251_ISC-2SK2313_C5128634.pdf
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