1200V 100A IGBT half bridge module JIAENSEMI GL100HF120F1UR1 with high RBSOA capability and low turn off losses
Key Attributes
Model Number:
GL100HF120F1UR1
Product Custom Attributes
Pd - Power Dissipation:
565W
Td(off):
350ns
Td(on):
57ns
Collector-Emitter Breakdown Voltage (Vces):
1.2kV
Reverse Transfer Capacitance (Cres):
0.2nF
Input Capacitance(Cies):
4.38nF
IGBT Type:
FS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
5V@1mA
Operating Temperature:
-40℃~+150℃
Pulsed Current- Forward(Ifm):
200A
Switching Energy(Eoff):
2.7mJ
Turn-On Energy (Eon):
8.8mJ
Mfr. Part #:
GL100HF120F1UR1
Product Description
Product Overview
The GL100HF120F1UR1 is a 1200V, 100A IGBT half-bridge module featuring planar field-stop technology, high RBSOA capability, and low turn-off losses. It is designed for applications such as inductive heating, welding, and high-frequency switching.
Product Attributes
- Brand: JIAEN Semiconductor
- Origin: Not specified
- Material: Al2O3 (Module Baseplate)
- Color: Not specified
- Certifications: basic insulation (class 1, IEC 61140)
Technical Specifications
| Parameter | IGBT Maximum Rated Values | Units | IGBT Characteristics | Test Conditions | Min | Typ | Max | Units | Diode Maximum Rated Values | Units | Diode Characteristics | Test Conditions | Min | Typ | Max | Units | Module | Units | |||
| Collector-Emitter Voltage | 1200 | V | Collector-Emitter Saturation Voltage | VGE=15V, IC=100A, Tvj=25 | - | 2.5 | 3.1 | V | Repetitive Peak Reverse Voltage | 1200 | V | Diode Forward Voltage | IF = 100A, VGE = 0V, Tvj=25 | - | 2.4 | - | V | Module Mounting Torque | 3.0-5.0 | Nm | |
| Gate-Emitter Voltage | +20 | V | VGE=15V, IC=100A, Tvj=125 | - | 3.0 | - | V | Continuous DC Forward Current | 100 | A | IF = 100A, VGE = 0V, Tvj=125 | - | 2.5 | - | V | Terminal Mounting Torque | 2.5-6.0 | Nm | |||
| Continuous Collector Current | 100 | A | Gate Threshold Voltage | VGE=VCE, IC=1mA, Tvj=25 | 5.0 | 6.0 | 7.0 | V | Repetitive Peak Collector Current | 200 | A | IF = 100A, VGE = 0V, Tvj=150 | - | 2.5 | 2.9 | V | Weight | 145 | g | ||
| Repetitive Peak Collector Current | 200 | A | Total Gate Charge | VGE=-15V+15V | - | 0.7 | - | uC | Peak Reverse Recovery Current | IC = 100A, VR=600V, -di/dt=2600A/us, VGE = -15V, Tvj=25 | - | 55 | - | A | Isolation Test Voltage | 3.0 | kV | ||||
| Maximum Power Dissipation | 565 | W | Internal Gate Resistor | Tvj=25 | - | 5 | - | IC = 100A, VR=600V, -di/dt=2600A/us, VGE = -15V, Tvj=125 | - | 55 | - | A | Module Baseplate Material | Cu | |||||||
| Input Capacitance | VCE=25V, VGE=0V, f=1MHz | - | 4.38 | - | nF | IC = 100A, VR=600V, -di/dt=2600A/us, VGE = -15V, Tvj=150 | - | 55 | - | A | Internal Isolation | basic insulation (class 1, IEC 61140) | |||||||||
| Reverse Transfer Capacitance | - | 0.2 | - | nF | Reverse Recovery Charge | Tvj=25 | - | 3.5 | - | uC | Electrical Clearance (Terminal to heatsink) | 17 | mm | ||||||||
| Collector-Emitter Leakage Current | VCE=1200V, VGE=0V, Tvj=25 | - | - | 1.0 | mA | Tvj=125 | - | 7.5 | - | uC | Electrical Clearance (Terminal to terminal) | 9.5 | mm | ||||||||
| Gate-Emitter Leakage Current, Forward | VGE=20V, VCE=0V, Tvj=25 | - | - | 200 | nA | Tvj=150 | - | 9.0 | - | uC | Surface Creepage Distance (Terminal to heatsink) | 17 | mm | ||||||||
| Gate-Emitter Leakage Current, Reverse | VGE=-20V, VCE=0V, Tvj=25 | - | - | -200 | nA | Reverse Recovery Energy | Tvj=25 | - | 2.5 | - | mJ | Surface Creepage Distance (Terminal to terminal) | 20 | mm | |||||||
| Turn-on Delay Time | VCE = 600V, IC = 100A, VGE = 15V, RGon = 4.7, Tvj=25 | - | 57 | - | ns | Tvj=125 | - | 4.2 | - | mJ | Comparative Tracking Index | >200 | |||||||||
| Turn-on Rise Time | Tvj=25 | - | 43 | - | ns | Tvj=150 | - | 4.8 | - | mJ | |||||||||||
| Turn-off Delay Time | VCE = 600V, IC = 100A, VGE = 15V, RGoff = 15, Tvj=25 | - | 350 | - | ns | Thermal Resistance, Junction to Case (Per Diode) | - | 0.5 | - | K/W | |||||||||||
| Turn-off Fall Time | Tvj=25 | - | 22 | - | ns | Temperature Under Switching Condition | -40 | - | 150 | ||||||||||||
| Turn-on Switching Loss | VCE = 600V, IC = 100A, VGE = 15V, RGon = 4.7, RGoff = 15, L = 80nH, Tvj=25 | - | 8.8 | - | mJ | ||||||||||||||||
| Turn-off Switching Loss | Tvj=25 | - | 2.7 | - | mJ | ||||||||||||||||
| Thermal Resistance, Junction to Case (Per IGBT) | - | 0.22 | - | K/W | |||||||||||||||||
| Temperature Under Switching Condition | -40 | - | 150 | ||||||||||||||||||
| Thermal Resistance, Case to Heatsink (Per Module) | - | 0.05 | - | K/W | |||||||||||||||||
| Module Stray Inductance | - | 30 | - | nH | |||||||||||||||||
| Module Lead Resistance (Terminals-Chip) | TC = 25, Per Switch | - | 0.65 | - | m | ||||||||||||||||
| Storage Temperature | -40 | - | 125 |
2509021810_JIAENSEMI-GL100HF120F1UR1_C51484288.pdf
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