Soft Switching Trench IGBT JIAENSEMI JNG15T120HJS1 with 1200V Voltage Rating and Low On State Voltage
Key Attributes
Model Number:
JNG15T120HJS1
Product Custom Attributes
Pd - Power Dissipation:
375W
Td(off):
140ns
Td(on):
22ns
Collector-Emitter Breakdown Voltage (Vces):
1.2kV
Reverse Transfer Capacitance (Cres):
13pF
Input Capacitance(Cies):
1.25nF
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
5.4V@250uA
Operating Temperature:
-40℃~+175℃
Pulsed Current- Forward(Ifm):
60A
Output Capacitance(Coes):
58pF
Reverse Recovery Time(trr):
223ns
Switching Energy(Eoff):
700uJ
Turn-On Energy (Eon):
900uJ
Mfr. Part #:
JNG15T120HJS1
Package:
TO-247
Product Description
Product Overview
The JNG15T120HJS1 is a Trench IGBT from JIAEN Semiconductor, designed for high-speed switching applications. It offers lower losses and higher energy efficiency, making it suitable for motor control, general inverters, and soft switching applications. Key features include a 1200V voltage rating, a typical on-state voltage of 1.7V, and soft current turn-off waveforms.
Product Attributes
- Brand: JIAEN
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Parameter | Symbol | Value | Units | Conditions |
| Collector-Emitter Voltage | VCES | 1200 | V | |
| Gate-Emitter Voltage | VGES | + 20 | V | |
| Continuous Collector Current | IC | 30 / 15 | A | TC=25 / TC=100 |
| Pulsed Collector Current | ICM | 60 | A | Note 1 |
| Diode Continuous Forward Current | IF | 15 | A | TC=100 |
| Diode Maximum Forward Current | IFM | 60 | A | Note 1 |
| Short Circuit Withstand Time | tsc | 10 | us | |
| Maximum Power Dissipation | PD | 375 / 187 | W | TC=25 / TC=100 |
| Operating Junction Temperature Range | TJ | -40 to +175 | ||
| Storage Temperature Range | TSTG | -55 to +150 | ||
| Thermal Resistance, Junction to case (IGBT) | Rth j-c | 0.4 | / W | |
| Thermal Resistance, Junction to case (Diode) | Rth j-c | 1.2 | / W | |
| Thermal Resistance, Junction to Ambient | Rth j-a | 40 | / W | |
| Collector-Emitter Breakdown Voltage | BVCES | 1200 | V | VGE= 0V, IC= 250uA |
| Collector-Emitter Leakage Current | ICES | 250 | uA | VCE= 1200V, VGE= 0V |
| Gate Leakage Current, Forward | IGES | + 100 | nA | VGE= + 20V, VCE= 0V |
| Gate Threshold Voltage | VGE(th) | 5.4 to 6.5 | V | VGE= VCE, IC= 250uA |
| Collector-Emitter Saturation Voltage | VCE(sat) | 1.7 | V | VGE=15V, IC= 15A |
| Total Gate Charge | Qg | 74 | nC | VCC=960V, VGE=15V, IC=15A |
| Turn-on Delay Time | td(on) | 22 | ns | VCC=600V, VGE=15V, IC=15A, RG=10, Inductive Load, TC=25 |
| Turn-on Rise Time | tr | 34 | ns | |
| Turn-off Delay Time | td(off) | 140 | ns | |
| Turn-off Fall Time | tf | 90 | ns | |
| Turn-on Switching Loss | Eon | 0.9 | mJ | |
| Turn-off Switching Loss | Eoff | 0.7 | mJ | |
| Total Switching Loss | Ets | 1.6 | mJ | |
| Input Capacitance | Cies | 1250 | pF | VCE=30V, VGE=0V, f = 1MHz |
| Output Capacitance | Coes | 58 | pF | |
| Reverse Transfer Capacitance | Cres | 13 | pF | |
| Diode Forward Voltage | VF | 2.3 | V | IF=15A |
| Diode Reverse Recovery Time | trr | 223 | ns | VCE = 600V, IF= 15A, dIF/dt = 250A/us |
| Diode peak Reverse Recovery Current | Irr | 8 | A | |
| Diode Reverse Recovery Charge | Qrr | 718 | nC |
Note 1: Repetitive Rating: Pulse width limited by maximum junction temperature.
2509021810_JIAENSEMI-JNG15T120HJS1_C51484265.pdf
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