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quality medium power soft starter module Infineon STT1400N18P55XPSA2 with integrated heatsink and 1800 volt rating factory
quality medium power soft starter module Infineon STT1400N18P55XPSA2 with integrated heatsink and 1800 volt rating factory

medium power soft starter module Infineon STT1400N18P55XPSA2 with integrated heatsink and 1800 volt rating

Key Attributes
Model Number: STT1400N18P55XPSA2
Product Custom Attributes
Mfr. Part #:
STT1400N18P55XPSA2
Product Description

Product Overview

The Sanftanlauf-Modul Soft Starter Module sTT1400N18P55 is a high-reliability electronic component utilizing advanced medium power technology and pressure contact technology. It features an integrated optimized heatsink and is designed for applications such as soft starters, bypass switches, power controllers, and static switches. This module offers key parameters like VDRM/VRRM of 1800V, an overload current of 1300A (21s), and an ITSM of 10500A.

Product Attributes

  • Brand: Infineon BIP
  • Technology: Advanced Medium Power Technology (AMPT), Pressure contact technology
  • Heatsink: Integrated optimized heatsink

Technical Specifications

ParameterSymbolValueUnitCondition
Repetitive peak forward off-state and reverse voltagesVDRM, VRRM1800VTvj = +25C...Tvj max
Non-repetitive peak forward off-state and reverse voltageVDSM, VRSM1850VTvj = +25C...Tvj max
Overload currentIoverload1300AW1C; sin.180;t overload= 21s; Tvj=155C; Tvjstart=40C
Surge currentITSM10500 / 9000ATvj = 25C, tP = 10ms / Tvj = Tvj max, tP = 10ms
It-valueIt551250 / 405000AsTvj = 25C, tP = 10ms / Tvj = Tvj max, tP = 10ms
Critical rate of rise of on-state current(diT/dt)cr250A/sDIN IEC 747-6, f = 50Hz, iGM = 1A, diG/dt = 1A/s
Critical rate of rise of off-state voltage(dvD/dt)cr1000V/sTvj = Tvj max, vD = 0,67 VDRM, 6.Kennbuchstabe / 6th letter F
On-state voltagevTmax. 1,39VTvj = Tvj max, iT = 1000 A
Threshold voltageV(TO)max. 0,9VTvj = Tvj max
Slope resistancerTmax. 0,49mTvj = Tvj max
Gate trigger currentIGTmax. 200mATvj = 25C, vD = 12V
Gate trigger voltageVGTmax. 2VTvj = 25C, vD = 12V
Gate non-trigger currentIGDmax. 10 / max. 5mATvj = Tvj max, vD = 12V / Tvj = Tvj max, vD = 0,5 VDRM
Gate non-trigger voltageVGDmax. 0,2VTvj = Tvj max, vD = 0,5 VDRM
Holding currentIHmax. 300mATvj = 25C, vD = 12V, RA = 1
Latching currentILmax. 1200mATvj = 25C, vD = 12V, RGK 10, iGM = 1A, diG/dt = 1A/s, tg = 20s
Forward off-state and reverse currentiD+ iRmax. 105mATvj = Tvj max, vD = VDRM, vR = VRRM, W1C
Gate controlled delay timetgdmax. 3sDIN IEC 747-6, Tvj = 25C, iGM = 1A, diG/dt = 1A/s
Circuit commutated turn-off timetqtyp. 250sTvj = Tvj max, iTM = ITAVM, vRM = 100 V, vDM = 0,67 VDRM, dvD/dt = 20 V/s, -diT/dt = 10 A/s, 5.Kennbuchstabe / 5th letter O
Thermal resistance, junction to reference point (per module, DC)RthJR(21s)max. 0,047K/Wper Module, DC
Thermal resistance, junction to reference point (per arm, DC)RthJR(21s)max. 0,093K/Wper Arm, DC
Thermal resistance, junction to reference point (per module, = 180 sin)RthJR(21s)max. 0,049K/Wper Module, = 180 sin
Thermal resistance, junction to reference point (per arm, = 180 sin)RthJR(21s)max. 0,098K/Wper Arm, = 180 sin
Thermal resistance, junction to ambient (per module, DC)RthJA(21s)max. 0,059K/Wper Module, DC
Thermal resistance, junction to ambient (per arm, DC)RthJA(21s)max. 0,118K/Wper Arm, DC
Thermal resistance, junction to ambient (per module, = 180 sin)RthJA(21s)max. 0,061K/Wper Module, = 180 sin
Thermal resistance, junction to ambient (per arm, = 180 sin)RthJA(21s)max. 0,123K/Wper Arm, = 180 sin
Maximum junction temperatureTvj max125 / 155C2)
Operating temperatureTc op-40...+125C2)
Storage temperatureTstg-40...+130C
Terminal connection torque (M6)10Nm 10%
WeightGtyp. 1280g
Creepage distance6,3mm
Vibration resistance50m/sf = 50 Hz

2411261535_Infineon-STT1400N18P55XPSA2_C20192444.pdf

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