Silicon NPN Power Transistor ISC BU508AF with High Collector Emitter Voltage and Operation Features
Key Attributes
Model Number:
BU508AF
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Pd - Power Dissipation:
60W
Transition Frequency(fT):
7MHz
Type:
NPN
Number:
1 NPN
Current - Collector(Ic):
8A
Collector - Emitter Voltage VCEO:
700V
Mfr. Part #:
BU508AF
Package:
TO-3P-3
Product Description
Product Overview
The ISC BU508AF is a Silicon NPN Power Transistor designed for high-voltage applications. It features a high collector-emitter sustaining voltage of 700V (Min) and high switching speed, making it suitable for horizontal deflection circuits in color TV receivers. The device offers minimum lot-to-lot variations for robust performance and reliable operation.
Product Attributes
- Brand: ISC
- Trademark: ISC & ISCsemi
- Origin: Silicon
- Material: Silicon
Technical Specifications
| Symbol | Parameter | Conditions | Min | Typ. | Max | Unit |
| ABSOLUTE MAXIMUM RATINGS | ||||||
| VCES | Collector-Emitter Voltage(VBE= 0) | 1500 | V | |||
| VCEO | Collector-Emitter Voltage | 700 | V | |||
| VEBO | Emitter-Base Voltage | 5 | V | |||
| IC | Collector Current- Continuous | 8 | A | |||
| ICM | Collector Current-Peak | 15 | A | |||
| IB | Base Current- Continuous | 4 | A | |||
| IBM | Base Current-Peak | 6 | A | |||
| PC | Collector Power Dissipation @ TC=25 | 60 | W | |||
| TJ | Junction Temperature | 150 | ||||
| Tstg | Storage Temperature Range | -65 | 150 | |||
| Rth j-c | Thermal Resistance,Junction to Case | 2.5 | /W | |||
| ELECTRICAL CHARACTERISTICS | ||||||
| VCEO(SUS) | Collector-Emitter Sustaining Voltage | IC= 50mA ; IB= 0 | 700 | V | ||
| VCE(sat) | Collector-Emitter Saturation Voltage | IC= 4.5A; IB= 2.0A | 1.0 | V | ||
| VBE(sat) | Base-Emitter Saturation Voltage | IC= 4.5A; IB= 2.0A | 1.5 | V | ||
| ICES | Collector Cutoff Current | VCE= 1500V; VBE= 0 | 1.0 | mA | ||
| VCE= 1500V; VBE= 0; TC=125 | 2.0 | mA | ||||
| IEBO | Emitter Cutoff Current | VEB= 5.0V ; IC= 0 | 10 | mA | ||
| hFE-1 | DC Current Gain | IC= 0.1A ; VCE= 5V | 6 | 30 | ||
| hFE-2 | DC Current Gain | IC= 4.5A ; VCE= 5V | 2.25 | |||
| COB | Output Capacitance | IE= 0; VCB= 10V; ftest= 0.1MHz | 125 | pF | ||
| fT | Current-GainBandwidth Product | IC= 0.1A; VCE= 5V; ftest= 1.0MHz | 7 | MHz | ||
2411220318_ISC-BU508AF_C2976477.pdf
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