Durable Silicon NPN Power Transistor ISC 2N3055 with Low Collector Emitter Saturation Voltage Rating
Key Attributes
Model Number:
2N3055
Product Custom Attributes
Mfr. Part #:
2N3055
Package:
TO-3
Product Description
ISC 2N3055 Silicon NPN Power Transistor
The ISC 2N3055 is a Silicon NPN Power Transistor designed for general-purpose switching and amplifier applications. It offers excellent Safe Operating Area, a DC Current Gain (hFE) of 20-70 @ IC = 4A, and a Collector-Emitter Saturation Voltage (VCE(sat)) of 1.1 V(Max) @ IC = 4A. It is a complement to the MJ2955 type and features minimum lot-to-lot variations for robust device performance and reliable operation.
Product Attributes
- Brand: ISC
- Trademark: ISC & ISCsemi
- Material: Silicon
- Type: NPN Power Transistor
- Complementary Type: MJ2955
Technical Specifications
| Symbol | Parameter | Conditions | Min | Max | Unit |
| VCEO(SUS) | Collector-Emitter Sustaining Voltage | IC=30mA ; IB=0 | 60 | V | |
| VCE(sat)-1 | Collector-Emitter Saturation Voltage | IC= 4A; IB= 0.4A | 1.1 | V | |
| VCE(sat)-2 | Collector-Emitter Saturation Voltage | IC= 10A; IB= 3.3A | 3.0 | V | |
| VBE(on) | Base-Emitter On Voltage | IC= 4A ; VCE= 4V | 1.5 | V | |
| ICEO | Collector Cutoff Current | VCE= 30V; IB=0 | 0.7 | mA | |
| IEBO | Emitter Cutoff Current | VEB= 7.0V; IC=0 | 5.0 | mA | |
| hFE-1 | DC Current Gain | IC= 4A ; VCE= 4V | 20 | 70 | |
| hFE-2 | DC Current Gain | IC= 10A ; VCE= 4V | 5.0 | ||
| Is/b | Second Breakdown Collector Current with Base Forward Biased | VCE= 40V,t= 1.0s,Nonrepetitive | 2.87 | A | |
| fT | Current Gain-Bandwidth Product | IC= 0.5A ; VCE= 10V;f=1.0MHz | 2.5 | MHz | |
| Rth j-c | Thermal Resistance,Junction to Case | 1.52 | /W | ||
| VCBO | Collector-Base Voltage | 100 | V | ||
| VCER | Collector-Emitter Voltage | 70 | V | ||
| VCEO | Collector-Emitter Voltage | 60 | V | ||
| VEBO | Emitter-Base Voltage | 7 | V | ||
| IC | Collector Current-Continuous | 15 | A | ||
| IB | Base Current | 7 | A | ||
| PC | Collector Power Dissipation@TC=25 | 115 | W | ||
| TJ, Tstg | Operating and Storage Junction Temperature Range | -65 | +150 |
2411200147_ISC-2N3055_C491427.pdf
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