Power Amplifier Silicon NPN Transistor ISC 2SC2073 Featuring 150V Collector Emitter Breakdown Voltage and Operation
Key Attributes
Model Number:
2SC2073
Product Custom Attributes
Mfr. Part #:
2SC2073
Package:
TO-220C
Product Description
Product Overview
The ISC 2SC2073 is a Silicon NPN Power Transistor designed for power amplifier and vertical output applications. It features a wide area of safe operation, a collector-emitter breakdown voltage of 150V (Min), and serves as a complement to the 2SA940 type. The device offers minimum lot-to-lot variations for robust performance and reliable operation.
Product Attributes
- Brand: ISC
- Trademark: ISC, ISCsemi
- Material: Silicon
- Type: NPN Power Transistor
Technical Specifications
| Symbol | Parameter | Conditions | Min | Typ. | Max | Unit |
| V(BR)CEO | Collector-Emitter Breakdown Voltage | 150 | V | |||
| VCBO | Collector-Base Voltage | 150 | V | |||
| VCEO | Collector-Emitter Voltage | 150 | V | |||
| VEBO | Emitter-Base Voltage | 5 | V | |||
| IC | Collector Current-Continuous | 1.5 | A | |||
| IB | Base Current-Continuous | 0.5 | A | |||
| PC | Collector Power Dissipation | @ Ta=25 | 1.5 | W | ||
| PC | Collector Power Dissipation | @ TC=25 | 25 | W | ||
| TJ | Junction Temperature | 150 | ||||
| Tstg | Storage Temperature Range | -55 | 150 | |||
| VCE(sat) | Collector-Emitter Saturation Voltage | IC= 500mA; IB= 50mA | 1.5 | V | ||
| VBE(on) | Base-Emitter On Voltage | IC= 500mA ; VCE= 10V | 0.85 | V | ||
| ICBO | Collector Cutoff Current | VCB= 120V ; IE= 0 | 10 | A | ||
| IEBO | Emitter Cutoff Current | VEB= 5V; IC= 0 | 10 | A | ||
| hFE | DC Current Gain | IC= 500mA ; VCE= 10V | 40 | 140 | ||
| COB | Output Capacitance | IE= 0; VCB= 10V; ftest= 1MHz | 35 | pF | ||
| fT | Current-GainBandwidth Product | IC= 500mA; VCE= 10V | 4 | MHz |
2411220123_ISC-2SC2073_C491414.pdf
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