Jilin Sino Microelectronics JCS4N60FC N channel MOSFET with low Crss and avalanche tested reliability
Key Attributes
Model Number:
JCS4N60FC
Product Custom Attributes
Drain To Source Voltage:
600V
Current - Continuous Drain(Id):
4A
Operating Temperature -:
-55℃~+150℃
RDS(on):
2.5Ω@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
15pF
Number:
1 N-channel
Output Capacitance(Coss):
100pF
Input Capacitance(Ciss):
860pF
Pd - Power Dissipation:
40.8W
Gate Charge(Qg):
25nC@10V
Mfr. Part #:
JCS4N60FC
Package:
TO-220MF
Product Description
Product Overview
The JCS4N60C is a N-channel enhancement mode MOSFET designed for high-frequency switching power supplies, electronic ballasts, and LED power supplies. It features low gate charge, low Crss, fast switching speed, 100% avalanche tested, improved dv/dt capability, and is RoHS compliant.
Product Attributes
- Brand: Jilin Sino-microelectronics Co., Ltd
- Certifications: RoHS
Technical Specifications
| Order Code | Marking | Package | ID (A) | VDSS (V) | Rds(on) Typ () | Rds(on) Max () | Qg-typ (nC) |
| JCS4N60VC-V-B / JCS4N60VC-V-BR | JCS4N60V | IPAK | 4.0 | 600 | 2.0 | 2.5 | 17.5 |
| JCS4N60VC-V2-B / JCS4N60VC-V2-BR | JCS4N60V | IPAK-S2 | 4.0 | 600 | 2.0 | 2.5 | 17.5 |
| JCS4N60CC-C-B / JCS4N60CC-C-BR | JCS4N60C | TO-220C | 4.0 | 600 | 2.0 | 2.5 | 17.5 |
| JCS4N60FC-F-B / JCS4N60FC-F-BR | JCS4N60F | TO-220MF | 4.0 | 600 | 2.0 | 2.5 | 17.5 |
| JCS4N60FC-F2-B / JCS4N60FC-F2-BR | JCS4N60F | TO-220MF-K2 | 4.0 | 600 | 2.0 | 2.5 | 17.5 |
| JCS4N60RC-R-B / JCS4N60RC-R-BR / JCS4N60RC-R-A / JCS4N60RC-R-AR | JCS4N60R | DPAK | 4.0 | 600 | 2.0 | 2.5 | 17.5 |
| JCS4N60BC-B-B / JCS4N60BC-B-BR | JCS4N60B | TO-262 | 4.0 | 600 | 2.0 | 2.5 | 17.5 |
Absolute Maximum Ratings (Tc=25)
| Parameter | Symbol | JCS4N60VC/ RC | JCS4N60 CC/BC | JCS4N60 FC | JCS4N60 FC-K2 | Unit |
| Drain-Source Voltage | VDSS | 600 | 600 | 600 | 600 | V |
| Drain Current -continuous (T=25) | ID | 4.0 | 4.0 | 4.0 | 4.0 | A |
| Drain Current -continuous (T=100) | ID | 2.5 | 2.5 | 2.5 | 2.5 | A |
| Drain Current - pulse (note 1) | IDM | 16* | 16* | 16* | 16* | A |
| Gate-Source Voltage | VGSS | 30 | 30 | 30 | 30 | V |
| Single Pulsed Avalanche Energy (note 2) | EAS | 416 | mJ | |||
| Avalanche Current (note 1) | IAR | 4.0 | A | |||
| Repetitive Avalanche Current (note 1) | EAR | 11.0 | mJ | |||
| Peak Diode Recovery dv/dt (note 3) | dv/dt | 5.5 | V/ns | |||
| Power Dissipation (TC=25) | PD | 159.2 | 179.6 | 40.8 | 28.4 | W |
| Derate above 25 | 1.274 | 1.436 | 0.326 | 0.227 | W/ | |
| Operating and Storage Temperature Range | TJ, TSTG | -55+150 | ||||
| Maximum Lead Temperature for Soldering Purposes | TL | 300 | ||||
Electrical Characteristics
| Parameter | Symbol | Tests conditions | Min | Typ | Max | Units |
| Off Characteristics | ||||||
| Drain-Source Voltage | BVDSS | ID=250A, VGS=0V | 600 | - | - | V |
| Breakdown Voltage Temperature Coefficient | BVDSS/ TJ | ID=250A, referenced to 25 | - | 0.6 | - | V/ |
| Zero Gate Voltage Drain Current | IDSS | VDS=600V,VGS=0V, TC=25 | - | - | 10 | A |
| Zero Gate Voltage Drain Current | IDSS | VDS=480V, TC=125 | - | - | 100 | A |
| Gate-body leakage current, forward | IGSSF | VDS=0V, VGS =30V | - | - | 100 | nA |
| Gate-body leakage current, reverse | IGSSR | VDS=0V, VGS =-30V | - | - | -100 | nA |
| On-Characteristics | ||||||
| Gate Threshold Voltage | VGS(th) | VDS = VGS , ID=250A | 2.0 | - | 4.0 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =10V , ID=2.0A, 25 | - | 2.0 | 2.5 | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =10V , ID=2.0A, 100 | - | 3.5 | 4.1 | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =10V , ID=2.0A, 150 | - | 5.2 | 5.8 | |
| Forward Transconductance | gfs | VDS = 40V , ID=2.0A (note 4) | - | 1.8 | - | S |
| Dynamic Characteristics | ||||||
| Gate resistance | Rg | F=1.0MHZ open drain | - | 0.8 | 5.5 | |
| Input capacitance | Ciss | VDS=25V, VGS =0V, f=1.0MHZ | - | 642.1 | 860 | pF |
| Output capacitance | Coss | VDS=25V, VGS =0V, f=1.0MHZ | - | 70.82 | 100 | pF |
| Reverse transfer capacitance | Crss | VDS=25V, VGS =0V, f=1.0MHZ | - | 3.06 | 15 | pF |
| Switching Characteristics | ||||||
| Turn-On delay time | td(on) | VDD=300V,ID=4.0A,RG=25 (note 4,5) | - | 9.6 | 20 | ns |
| Turn-On rise time | tr | VDD=300V,ID=4.0A,RG=25 (note 4,5) | - | 23.6 | 50 | ns |
| Turn-Off delay time | td(off) | VDD=300V,ID=4.0A,RG=25 (note 4,5) | - | 38.8 | 80 | ns |
| Turn-Off Fall time | tf | VDD=300V,ID=4.0A,RG=25 (note 4,5) | - | 26.4 | 70 | ns |
| Total Gate Charge | Qg | VDS =480V , ID=4.0A VGS =10V (note 4,5) | - | 17.5 | 25 | nC |
| Gate-Source charge | Qgs | VDS =480V , ID=4.0A VGS =10V (note 4,5) | - | 4.3 | 8 | nC |
| Gate-Drain charge | Qgd | VDS =480V , ID=4.0A VGS =10V (note 4,5) | - | 4.66 | 9 | nC |
| Drain-Source Diode Characteristics and Maximum Ratings | ||||||
| Maximum Continuous Drain -Source Diode Forward Current | IS | - | - | 4 | A | |
| Maximum Pulsed Drain-Source Diode Forward Current | ISM | - | - | 16 | A | |
| Drain-Source Diode Forward Voltage | VSD | VGS=0V, IS=4.0A | - | - | 1.4 | V |
| Reverse recovery time | trr | VGS=0V, IS=4.0A dIF/dt=100A/s (note 4) | - | 380.7 | 900 | ns |
| Reverse recovery charge | Qrr | VGS=0V, IS=4.0A dIF/dt=100A/s (note 4) | - | 1.555 | 4.0 | C |
Thermal Characteristics
| Parameter | Symbol | JCS4N60 VC/RC | JCS4N60 CC/BC | JCS4N60FC (TO-220MF | JCS4N60FC (TO-220MF-K2) | Unit |
| Thermal Resistance, Junction to Case | Rth(j-c) | 0.785 | 0.696 | 3.063 | 4.407 | /W |
| Thermal Resistance, Junction to Ambient | Rth(j-A) | 79.89 | 59.34 | 44.42 | 46.87 | /W |
2409280102_Jilin-Sino-Microelectronics-JCS4N60FC_C2693262.pdf
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