High Reliability NPN Power Transistor Jilin Sino-Microelectronics 3DD13007K-220 with RoHS Compliance
Key Attributes
Model Number:
3DD13007K-220
Product Custom Attributes
Current - Collector Cutoff:
100uA
Pd - Power Dissipation:
80W
Transition Frequency(fT):
4MHz
Type:
NPN
Current - Collector(Ic):
8A
Collector - Emitter Voltage VCEO:
400V
Operating Temperature:
-
Mfr. Part #:
3DD13007K-220
Package:
TO-220
Product Description
Product Overview
The 3DD13007K is a high voltage, fast-switching NPN power transistor designed for various power applications including energy-saving lamps, electronic ballasts, high-frequency switching power supplies, and general power amplification. It offers high breakdown voltage, high current capability, high switching speed, and high reliability, while being a RoHS compliant product.
Product Attributes
- Brand: Jilin Sino-microelectronics Co., Ltd.
- Model: 3DD13007K
- Marking: D13007K
- Halogen Free: No
- Package: TO-220
- Packaging: Bag
- Certifications: RoHS product
Technical Specifications
| Parameter | Symbol | Value (min) | Value (typ) | Value (max) | Unit | Tests conditions |
| Collector-Emitter Voltage (VBE=0) | VCES | 700 | V | |||
| Collector-Emitter Voltage (IB=0) | VCEO | 400 | V | |||
| Emitter-Base Voltage | VEBO | 9 | V | |||
| Collector Current (DC) | IC | 8 | A | |||
| Collector Current (pulse) | ICP | 16 | A | Pulse Test: Pulse Width = 5.0 ms, Duty Cycle < 10%. | ||
| Base Current (DC) | IB | 4 | A | |||
| Base Current (pulse) | IBP | 8 | A | |||
| Total Dissipation (TO-220) | PC | 80 | W | |||
| Junction Temperature | Tj | 150 | ||||
| Storage Temperature | Tstg | -55 | +150 | |||
| Breakdown Voltage CEO | V(BR)CEO | 400 | V | IC=10mA,IB=0 | ||
| Breakdown Voltage CBO | V(BR)CBO | 700 | V | IC=1mA,IB=0 | ||
| Breakdown Voltage EBO | V(BR)EBO | 9 | V | IE=1mA,IC=0 | ||
| Collector Cutoff Current | ICBO | 100 | A | VCB=700V, IE=0 | ||
| Collector Cutoff Current | ICEO | 50 | A | VCE=400V,IB=0 | ||
| Emitter Cutoff Current | IEBO | 10 | A | VEB=9V, IC=0 | ||
| DC Current Gain | Hfe(1) | 8 | 50 | VCE =5V, IC=2A | ||
| DC Current Gain | Hfe(2) | 5 | VCE =5V, IC=5A | |||
| Collector-Emitter Saturation Voltage | VCE(sat)(1) | 1.2 | V | IC=5A, IB=1A | ||
| Collector-Emitter Saturation Voltage | VCE(sat)(2) | 3.0 | V | IC=8A, IB=2A | ||
| Base-Emitter Saturation Voltage | VBE(sat) | 1.8 | V | IC=5A, IB=1A | ||
| Fall Time | tf | 0.7 | S | |||
| Storage Time | ts | 4 | S | VCC=24V IC=5A,IB1=-IB2=1A | ||
| Transition Frequency | fT | 4 | MHz | VCE=10V, IC=0.5A | ||
| Thermal Resistance Junction Case (TO-220) | Rth(j-c) | 1.56 | /W |
2411201841_Jilin-Sino-Microelectronics-3DD13007K-220_C272479.pdf
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