Jilin Sino Microelectronics JCS7HN60RC DPAK N channel MOSFET 600V 7A for high frequency applications
Key Attributes
Model Number:
JCS7HN60RC-DPAK
Product Custom Attributes
Drain To Source Voltage:
600V
Current - Continuous Drain(Id):
7A
Operating Temperature -:
-55℃~+150℃
RDS(on):
1.3Ω@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
20pF
Number:
-
Output Capacitance(Coss):
300pF
Input Capacitance(Ciss):
1.6nF
Pd - Power Dissipation:
120W
Mfr. Part #:
JCS7HN60RC-DPAK
Package:
DPAK
Product Description
Product Overview
The JCS7HN60C is a 600V, 7.0A N-channel enhancement mode MOSFET designed for high-frequency switching power supplies, electronic ballasts, and LED power supplies. It features low gate charge, low Crss, fast switching speed, 100% avalanche tested, improved dv/dt capability, and is RoHS compliant.
Product Attributes
- Brand: Jilin Sino-microelectronics Co., Ltd.
- Certifications: RoHS
Technical Specifications
| Order Code | Marking | Package | ID (A) | VDSS (V) | Rdson-max (@Vgs=10V) () | Qg-typ (nC) |
| JCS7HN60VC-V-B / JCS7HN60VC-V-BR | N/A | IPAK | 7.0 | 600 | 1.3 | 32 |
| JCS7HN60RC-R-B / JCS7HN60RC-R-BR | JCS7HN60RC-R-A / JCS7HN60RC-R-AR | DPAK | 7.0 | 600 | 1.3 | 32 |
| JCS7HN60BC-B-B / JCS7HN60BC-B-BR | N/A | TO-262 | 7.0 | 600 | 1.3 | 32 |
| JCS7HN60SC-S-B / JCS7HN60SC-S-BR | JCS7HN60SC-S-A / JCS7HN60SC-S-AR | TO-263 | 7.0 | 600 | 1.3 | 32 |
| JCS7HN60CC-C-B / JCS7HN60CC-C-BR | N/A | TO-220C | 7.0 | 600 | 1.3 | 32 |
| JCS7HN60FC-F-B / JCS7HN60FC-F-BR | N/A | TO-220MF | 7.0 | 600 | 1.3 | 32 |
| JCS7HN60FC-F2-B / JCS7HN60FC-F2-BR | N/A | TO-220MF-K2 | 7.0 | 600 | 1.3 | 32 |
Absolute Maximum Ratings
| Parameter | Symbol | Value (JCS7HN60 CC/SC/BC/VC/RC) | Value (JCS7HN60FC) | Value (JCS7HN60F C-K2) | Unit |
| Drain-Source Voltage | VDSS | 600 | 600 | V | |
| Drain Current -continuous (Tc=25) | ID | 7.0* | 7.0* | A | |
| Drain Current -continuous (Tc=100) | ID | 4.6* | 4.6* | A | |
| Drain Current - pulse (note 1) | IDM | 28* | 28* | A | |
| Gate-Source Voltage | VGSS | 30 | 30 | V | |
| Single Pulsed Avalanche Energy (note 2) | EAS | 420 | 420 | mJ | |
| Avalanche Current (note 1) | IAR | 7.0 | 7.0 | A | |
| Repetitive Avalanche Energy (note 1) | EAR | 12.8 | 12.8 | mJ | |
| Peak Diode Recovery dv/dt (note 3) | dv/dt | 4.5 | 4.5 | V/ns | |
| Power Dissipation (TC=25) | PD | 120 | 30.2 | W | |
| Power Dissipation -Derate above 25 | PD | 1.04 | 0.24 | W/ | |
| Operating and Storage Temperature Range | TJ,TSTG | -55+150 | -55+150 | ||
| Maximum Lead Temperature for Soldering Purposes | TL | 300 | 300 |
Electrical Characteristics
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Drain-Source Voltage | BVDSS | ID=250A, VGS=0V | 600 | - | - | V |
| Breakdown Voltage Temperature Coefficient | BVDSS/ TJ | ID=250A, referenced to 25 | - | 0.59 | - | V/ |
| Zero Gate Voltage Drain Current | IDSS | VDS=600V,VGS=0V, TC=25 | - | - | 10 | A |
| Zero Gate Voltage Drain Current | IDSS | VDS=480V, TC=125 | - | - | 100 | A |
| Gate-body leakage current, forward | IGSSF | VDS=0V, VGS =30V | - | - | 100 | nA |
| Gate-body leakage current, reverse | IGSSR | VDS=0V, VGS =-30V | - | - | -100 | nA |
| Gate Threshold Voltage | VGS(th) | VDS = VGS , ID=250A | 2.0 | - | 4.0 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =10V , ID=3.5A | 0.5 | 1.0 | 1.3 | |
| Static Drain-Source On-Resistance (@100) | RDS(ON) | VGS =10V , ID=3.5A | 0.5 | 1.75 | 3.5 | |
| Static Drain-Source On-Resistance (@150) | RDS(ON) | VGS =10V , ID=3.5A | 0.5 | 2.6 | 6 | |
| Forward Transconductance | gfs | VDS = 40V, ID=7.0Anote 4 | - | 5.6 | - | S |
| Gate resistance | Rg | F=1.0MHZ open drain | - | 1.0 | 4.0 | |
| Input capacitance | Ciss | VDS=25V,VGS =0V, f=1.0MHZ | - | 1100 | 1600 | pF |
| Output capacitance | Coss | VDS=25V,VGS =0V, f=1.0MHZ | - | 251 | 300 | pF |
| Reverse transfer capacitance | Crss | VDS=25V,VGS =0V, f=1.0MHZ | - | 14 | 20 | pF |
| Turn-On delay time | td(on) | VDD=300V,ID=7A,RG=25 note 45 | - | 11 | 31 | ns |
| Turn-On rise time | tr | VDD=300V,ID=7A,RG=25 note 45 | - | 35 | 80 | ns |
| Turn-Off delay time | td(off) | VDD=300V,ID=7A,RG=25 note 45 | - | 46 | 95 | ns |
| Turn-Off Fall time | tf | VDD=300V,ID=7A,RG=25 note 45 | - | 40 | 92 | ns |
| Total Gate Charge | Qg | VDS =480V , ID=7A VGS =10V note 45 | - | 32 | 60 | nC |
| Gate-Source charge | Qgs | VDS =480V , ID=7A VGS =10V note 45 | - | 6 | 15 | nC |
| Gate-Drain charge | Qgd | VDS =480V , ID=7A VGS =10V note 45 | - | 15 | 32 | nC |
| Maximum Continuous Drain -Source Diode Forward Current | IS | - | - | 7.0 | A | |
| Maximum Pulsed Drain-Source Diode Forward Current | ISM | - | - | 28 | A | |
| Drain-Source Diode Forward Voltage | VSD | VGS=0V, IS=7.0A | - | - | 1.4 | V |
| Reverse recovery time | trr | VGS=0V, IS=7.0A dIF/dt=100A/s (note 4) | - | 345 | 700 | ns |
| Reverse recovery charge | Qrr | VGS=0V, IS=7.0A dIF/dt=100A/s (note 4) | - | 3.2 | 6.4 | C |
Thermal Characteristics
| Parameter | Symbol | Max (JCS7HN60VC/ RC/CC/SC/BC) | Max (JCS7HN60FC TO-220MF) | Max (JCS7HN60FC TO-220MF- K2) | Unit |
| Thermal Resistance, Junction to Case | Rth(j-c) | 1.04 | 3.2 | 4.16 | /W |
| Thermal Resistance, Junction to Ambient | Rth(j-A) | 62.5 | 62.5 | 62.5 | /W |
2411201840_Jilin-Sino-Microelectronics-JCS7HN60RC-DPAK_C272586.pdf
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