trench IGBT JIAENSEMI JNG50T65HMU1 optimized for soft switching applications and power conversion systems
Key Attributes
Model Number:
JNG50T65HMU1
Product Custom Attributes
Pd - Power Dissipation:
250W
Td(off):
124ns
Td(on):
24ns
Collector-Emitter Breakdown Voltage (Vces):
650V
Reverse Transfer Capacitance (Cres):
93pF
Input Capacitance(Cies):
3.356nF
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
4.3V@1mA
Operating Temperature:
-55℃~+175℃
Pulsed Current- Forward(Ifm):
150A
Output Capacitance(Coes):
179pF
Reverse Recovery Time(trr):
136ns
Switching Energy(Eoff):
1.2mJ
Turn-On Energy (Eon):
1.4mJ
Mfr. Part #:
JNG50T65HMU1
Package:
TO-247
Product Description
Product Overview
The JNG50T65HMU1 is a Trench IGBT from JIAEN Semiconductor designed to reduce conduction loss, improve switching performance, and enhance avalanche energy. It features high speed switching, a positive temperature coefficient, and a reliable, rugged design with low VCE(sat). This IGBT is suitable for applications such as motor drives, UPS, Boost converters, portable power stations, and other soft switching applications.
Product Attributes
- Brand: JIAEN
- Origin: www.jiaensemi.com
Technical Specifications
| Parameter | Symbol | Value | Units | Conditions | |
| Collector-Emitter Voltage | VCES | 650 | V | ||
| Gate-Emitter Voltage | VGES | +30 | V | ||
| Continuous Collector Current (TC=25) | IC | 100 | A | (TC=25) | |
| Continuous Collector Current (TC=100) | IC | 50 | A | (TC=100) | |
| Pulsed Collector Current | ICM | 150 | A | (Note 1) | |
| Diode Continuous Forward Current (TC=100) | IF | 50 | A | (TC=100) | |
| Diode Maximum Forward Current | IFM | 150 | A | (Note 1) | |
| Short Circuit Withstand Time | tsc | 8 | us | ||
| Maximum Power Dissipation (TC=25) | PD | 250 | W | (TC=25) | |
| Maximum Power Dissipation (TC=100) | PD | 125 | W | (TC=100) | |
| Operating Junction Temperature Range | TJ | -55 to +175 | |||
| Storage Temperature Range | TSTG | -55 to +175 | |||
| Thermal Resistance, Junction to Case (IGBT) | Rth j-c | 0.60 | /W | ||
| Thermal Resistance, Junction to Case (Diode) | Rth j-c | 0.55 | /W | ||
| Thermal Resistance, Junction to Ambient | Rth j-a | 40 | /W | ||
| Collector-Emitter Breakdown Voltage | BVCES | 650 | V | VGE=0V, IC=250uA | |
| Collector-Emitter Leakage Current | ICES | - | 100 | uA | VCE=650V, VGE=0V |
| Gate Leakage Current, Forward | IGES | - | 200 | nA | VGE=20V, VCE=0V |
| Gate Threshold Voltage | VGE(th) | 4.3 | 6.3 | V | VGE=VCE, IC=1mA |
| Collector-Emitter Saturation Voltage | VCE(sat) | - | 2.2 | V | VGE=15V, IC=50A |
| Total Gate Charge | Qg | - | 183 | nC | VCC=520V, VGE=15V, IC=50A |
| Gate-Emitter Charge | Qge | - | 26 | nC | |
| Gate-Collector Charge | Qgc | - | 83 | nC | |
| Turn-on Delay Time | td(on) | - | 24 | ns | VCC=400V, VGE=15V, IC=50A, RG=5, Inductive Load, TC=25 |
| Turn-on Rise Time | tr | - | 88 | ns | |
| Turn-off Delay Time | td(off) | - | 124 | ns | |
| Turn-off Fall Time | tf | - | 73 | ns | |
| Turn-on Switching Loss | Eon | - | 1.4 | mJ | |
| Turn-off Switching Loss | Eoff | - | 1.2 | mJ | |
| Total Switching Loss | Ets | - | 2.6 | mJ | |
| Input Capacitance | Cies | - | 3356 | pF | VCE=25V, VGE=0V, f=1MHz |
| Output Capacitance | Coes | - | 179 | pF | |
| Reverse Transfer Capacitance | Cres | - | 93 | pF | |
| Diode Forward Voltage | VF | - | 1.85 | V | IF=50A |
| Diode Reverse Recovery Time | trr | - | 136 | ns | VCE=400V, IF=50A, dif/dt=200A/ns |
| Diode peak Reverse Recovery Current | Irr | - | 6.9 | A | |
| Diode Reverse Recovery Charge | Qrr | - | 350 | nC |
2509021810_JIAENSEMI-JNG50T65HMU1_C51484259.pdf
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