Jilin Sino Microelectronics JCS10N65FC 220MF 10A 650V N channel MOSFET with improved dv dt capability
Key Attributes
Model Number:
JCS10N65FC-220MF
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
10A
Operating Temperature -:
-55℃~+150℃
RDS(on):
1Ω@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
25pF
Number:
-
Input Capacitance(Ciss):
1.66nF
Pd - Power Dissipation:
40W
Gate Charge(Qg):
75nC@10V
Mfr. Part #:
JCS10N65FC-220MF
Package:
TO-220F-3
Product Description
Product Overview
The JCS10N65FC is a high-efficiency N-channel Power MOSFET designed for high-frequency switching power supplies, electronic lamp ballasts, and LED power supplies. It features low gate charge, low Crss (typical 18pF), fast switching speed, 100% avalanche tested, and improved dv/dt capability. This RoHS compliant product is available in TO-220MF and TO-220MF-K2 packages.
Product Attributes
- Brand: Jilin Sino-microelectronics Co., Ltd.
- Halogen Free: No
- Certifications: RoHS product
Technical Specifications
| Order Code | Marking | Package | Device Weight (typ) | Main Characteristics (ID, VDSS, Rds(on)-max, Qg-Typ) |
| JCS10N65FC-O-F-N-B | JCS10N65F | TO-220MF | 2.20 g | 10A, 650V, 1.0 (@Vgs=10V), 54nC |
| JCS10N65FC-O-F2-N-B | JCS10N65F | TO-220MF-K2 | 2.00 g | 10A, 650V, 1.0 (@Vgs=10V), 54nC |
Absolute Maximum Ratings (Tc=25)
| Parameter | Symbol | Value | Unit |
| Drain-Source Voltage | VDSS | 650 | V |
| Drain Current -continuous | ID (T=25) | 10* | A |
| Drain Current -continuous | ID (T=100) | 6.0* | A |
| Drain Current pulsenote 1 | IDM | 40* | A |
| Gate-Source Voltage | VGSS | 30 | V |
| Single Pulsed Avalanche Energynote 2 | EAS | 1000 | mJ |
| Avalanche Currentnote 1 | IAR | 10 | A |
| Repetitive Avalanche Currentnote 1 | EAR | 15.6 | mJ |
| Peak Diode Recovery dv/dtnote 3 | dv/dt | 5.0 | V/ns |
| Power Dissipation | PD (TC=25) | 40 | W |
| Power Dissipation -Derate above 25 | - | 0.32 | W/ |
| Operating and Storage Temperature Range | TJTSTG | -55+150 | |
| Maximum Lead Temperature for Soldering Purposes | TL | 300 |
Electrical Characteristics
| Parameter | Symbol | Tests conditions | Min | Typ | Max | Unit |
| Off Characteristics | ||||||
| Drain-Source Voltage | BVDSS | ID=250A, VGS=0V | 650 | - | - | V |
| Breakdown Voltage Temperature Coefficient | BVDSS/TJ | ID=250A, referenced to 25 | - | 0.65 | - | V/ |
| Zero Gate Voltage Drain Current | IDSS | VDS=650V,VGS=0V, TC=25 | - | - | 10 | A |
| Zero Gate Voltage Drain Current | IDSS | VDS=520V, TC=125 | - | - | 100 | A |
| Gate-body leakage current, forward | IGSSF | VDS=0V, VGS =30V | - | - | 100 | nA |
| Gate-body leakage current, reverse | IGSSR | VDS=0V, VGS =-30V | - | - | -100 | nA |
| On-Characteristics | ||||||
| Gate Threshold Voltage | VGS(th) | VDS = VGS , ID=250A | 2.0 | - | 4.0 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =10V , ID=5.0A | - | 0.73 | 1.0 | |
| Forward Transconductance | gfs | VDS = 40V, ID=5.0Anote 4 | - | 5.7 | - | S |
| Dynamic Characteristics | ||||||
| Input capacitance | Ciss | VDS=25V, VGS =0V, f=1.0MHZ | - | 1270 | 1660 | pF |
| Output capacitance | Coss | VDS=25V, VGS =0V, f=1.0MHZ | - | 150 | 133 | pF |
| Reverse transfer capacitance | Crss | VDS=25V, VGS =0V, f=1.0MHZ | - | 18 | 25 | pF |
| Switching Characteristics | ||||||
| Turn-On delay time | td(on) | VDD=325V,ID=10A,RG=25 note 45 | - | 30.7 | 39 | ns |
| Turn-On rise time | tr | VDD=325V,ID=10A,RG=25 note 45 | - | 75.5 | 97 | ns |
| Turn-Off delay time | td(off) | VDD=325V,ID=10A,RG=25 note 45 | - | 85 | 108 | ns |
| Turn-Off Fall time | tf | VDD=325V,ID=10A,RG=25 note 45 | - | 54.4 | 71 | ns |
| Total Gate Charge | Qg | VDS =520V , ID=10A VGS =10V note 45 | - | 54 | 75 | nC |
| Gate-Source charge | Qgs | VDS =520V , ID=10A VGS =10V note 45 | - | 7.5 | - | nC |
| Gate-Drain charge | Qgd | VDS =520V , ID=10A VGS =10V note 45 | - | 21.4 | - | nC |
| Drain-Source Diode Characteristics and Maximum Ratings | ||||||
| Maximum Continuous Drain -Source Diode Forward Current | IS | - | - | - | 10 | A |
| Maximum Pulsed Drain-Source Diode Forward Current | ISM | - | - | - | 40 | A |
| Drain-Source Diode Forward Voltage | VSD | VGS=0V, IS=10A | - | 1.30 | - | V |
| Reverse recovery time | trr | VGS=0V, IS=10A dIF/dt=100A/s (note 4) | - | 453 | - | ns |
| Reverse recovery charge | Qrr | VGS=0V, IS=10A dIF/dt=100A/s (note 4) | - | 2.9 | - | C |
Thermal Characteristics
| Parameter | Symbol | Max | Unit |
| Thermal Resistance, Junction to Case | Rth(j-c) | 3.1 | /W |
| Thermal Resistance, Junction to Ambient | Rth(j-A) | 56 | /W |
2409271403_Jilin-Sino-Microelectronics-JCS10N65FC-220MF_C272583.pdf
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