Power Transistor Jilin Sino Microelectronics 3DD209L 3PB RoHS Compliant for High Frequency Circuits
Key Attributes
Model Number:
3DD209L-3PB
Product Custom Attributes
Current - Collector Cutoff:
100uA
Pd - Power Dissipation:
120W
Transition Frequency(fT):
4MHz
Type:
NPN
Current - Collector(Ic):
12A
Collector - Emitter Voltage VCEO:
400V
Mfr. Part #:
3DD209L-3PB
Package:
TO-3P-3
Product Description
Product Overview
The 3DD209L is a high voltage, fast-switching NPN power transistor designed for various power applications. It offers high breakdown voltage, high current capability, and high switching speed, making it suitable for energy-saving lights, electronic ballasts, high-frequency switching power supplies, and general power amplification circuits. This product is RoHS compliant and offers high reliability.
Product Attributes
- Brand: Jilin Sino-microelectronics Co., Ltd
- Halogen Free: No
- Certifications: RoHS product
Technical Specifications
| Parameter | Symbol | Value(min) | Value(typ) | Value(max) | Unit | Notes | |
| Absolute Maximum Ratings (Tc=25) | Collector- Emitter Voltage (VBE=0) | VCES | 700 | - | - | V | |
| Collector- Emitter Voltage (IB=0) | VCEO | 400 | - | - | V | ||
| Emitter-Base Voltage | VEBO | - | - | 9 | V | ||
| Collector Current (DC) | IC | - | - | 12 | A | ||
| Collector Current (pulse) | ICP | - | - | 24 | A | Pulse Test: Pulse Width = 5.0 ms, Duty Cycle < 10%. | |
| Electrical Characteristics | Collector-Emitter Saturation Voltage (IC=5A, IB=1A) | VCE(sat)(1) | - | - | 1.2 | V | |
| Collector-Emitter Saturation Voltage (IC=8A, IB=1.6A) | VCE(sat)(2) | - | - | 1.8 | V | ||
| Base-Emitter Saturation Voltage (IC=8A, IB=1.6A) | VBE(sat) | - | - | 1.8 | V | ||
| Switching Characteristics | Fall Time | tf | - | - | 0.7 | S | VCC=24V, IC=5A, IB1=-IB2=1A |
| Storage Time | ts | - | - | 3 | S | VCC=24V, IC=5A, IB1=-IB2=1A | |
| Transition Frequency | fT | 4 | - | - | MHz | VCE=10V, IC=0.5A | |
| Thermal Characteristics | Thermal Resistance Junction Case (TO-3PN(B) /TO-247) | Rth(j-c) | - | - | 1.05 | /W | |
| Package Information | Package | - | TO-3PN | TO-3PB | TO-247 | - | |
| Packaging | - | Tube | |||||
2411201840_Jilin-Sino-Microelectronics-3DD209L-3PB_C272482.pdf
Related Products
N Channel Enhancement Mode MOSFET YANGJIE YJG70G06A with Low RDS ON and Excellent Thermal Performance
Product OverviewThe YJG70G06A is an N-Channel Enhancement Mode Field Effect Transistor from Yangzhou Yangjie Electronic Technology Co., Ltd. Featuring Split Gate Trench MOSFET technology and a high-density cell design, it offers excellent package heat dissipation and low RDS(ON). It is suitable for ...
Power Field Effect Transistor XDS TX15N10B N Channel MOSFET Suitable for Battery Powered Circuits
Product DescriptionThe TX15N10B is an N-Channel logic enhancement mode power field-effect transistor utilizing high cell density, DMOS trench technology. This advanced process minimizes on-state resistance, making the device particularly suitable for low-voltage applications such as cellular phones, ...
Silicon Bidirectional Trigger Diode YFW LLDB3 for Thyristor Phase Control Circuits Lamp Dimming and Speed Control
Product OverviewThe LL-34 LLDB3/LLDB4 are Silicon Bidirectional Trigger Diodes designed for thyristor phase control circuits. They are suitable for applications such as lamp-dimming, universal-motor speed controls, and heat controls.Product AttributesBrand: GuangDongYoufengMicroelectronicsCo,Ltd...
Silicon Carbide Power MOSFET YANGJIE YJD212040NCFG2 Designed for Fast Switching and High Temperature
Product OverviewThe YJD212040NCFG2 is a Silicon Carbide Power MOSFET (N-Channel Enhancement) designed for high-speed switching applications. It offers essentially no switching losses, reduced heat sink requirements, and a maximum working temperature of 175 C. Key features include high blocking ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
