Jilin Sino Microelectronics JCS2N60VB IPAK N channel MOSFET designed for switch mode power supplies
Key Attributes
Model Number:
JCS2N60VB-IPAK
Product Custom Attributes
Drain To Source Voltage:
600V
Current - Continuous Drain(Id):
2A
Operating Temperature -:
-55℃~+150℃
RDS(on):
4.5Ω@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Reverse Transfer Capacitance (Crss@Vds):
10pF
Number:
1 N-channel
Output Capacitance(Coss):
70pF
Input Capacitance(Ciss):
560pF
Pd - Power Dissipation:
43.6W
Gate Charge(Qg):
11nC@480V
Mfr. Part #:
JCS2N60VB-IPAK
Package:
TO-251
Product Description
Product Overview
The JCS2N60B is a N-channel enhancement mode MOSFET designed for high-efficiency switch mode power supplies, electronic lamp ballasts, and LED power supplies. It features low gate charge, low Crss, fast switching speed, 100% avalanche tested, and improved dv/dt capability, making it a RoHS compliant product.
Product Attributes
- Brand: Jilin Sino-microelectronics Co., Ltd.
- Certifications: RoHS
Technical Specifications
| Order Code | Marking | Package | ID (A) | VDSS (V) | Rds(on) Max () (Vgs=10V) | Qg Typ (nC) |
| JCS2N60VB-V-B / JCS2N60VB-V-BR | JCS2N60VB | IPAK | 2.0 | 600 | 4.5 | 5.9 |
| JCS2N60VB-V2-B / JCS2N60VB-V2-BR | JCS2N60VB | IPAK-S2 | 2.0 | 600 | 4.5 | 5.9 |
| JCS2N60RB-R-B / JCS2N60RB-R-BR | JCS2N60RB-R-A / JCS2N60RB-R-AR | DPAK | 2.0 | 600 | 4.5 | 5.9 |
| JCS2N60CB-C-B / JCS2N60CB-C-BR | JCS2N60CB | TO-220C | 2.0 | 600 | 4.5 | 5.9 |
| JCS2N60FB-F-B / JCS2N60FB-F-BR | JCS2N60FB | TO-220MF | 2.0 | 600 | 4.5 | 5.9 |
| JCS2N60MB-M-B / JCS2N60MB-M-BR | JCS2N60MB | TO-126-K1 | 2.0 | 600 | 4.5 | 5.9 |
| JCS2N60MB-MF-B / JCS2N60MFB-MF-BR | JCS2N60MFB | TO-126F | 2.0 | 600 | 4.5 | 5.9 |
Absolute Maximum Ratings (Tc=25)
| Parameter | Symbol | Value | Unit |
| Drain-Source Voltage | VDSS | 600 | V |
| Continuous Drain Current (Tj=25) | ID | 2.0* | A |
| Continuous Drain Current (Tj=100) | ID | 1.3* | A |
| Pulsed Drain Current (note 1) | IDM | 6.0* | A |
| Gate-Source Voltage | VGSS | 30 | V |
| Single Pulsed Avalanche Energy (note 2) | EAS | 240 | mJ |
| Avalanche Current (note 1) | IAR | 1.9 | A |
| Repetitive Avalanche Current (note 1) | EAR | 4.4 | mJ |
| Peak Diode Recovery dv/dt (note 3) | dv/dt | 4.5 | V/ns |
| Power Dissipation TC=25 (JCS2N60VB/RB /MB/MFB) | PD | 43.6 | W |
| Power Dissipation TC=25 (JCS2N60CB) | PD | 53.9 | W |
| Power Dissipation TC=25 (JCS2N60FB) | PD | 40.5 | W |
| Derate above 25 (JCS2N60VB/RB /MB/MFB) | - | 0.35 | W/ |
| Derate above 25 (JCS2N60CB) | - | 0.43 | W/ |
| Derate above 25 (JCS2N60FB) | - | 0.32 | W/ |
| Operating and Storage Temperature Range | TJ, TSTG | -55+150 |
Electrical Characteristics
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Off-Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | ID=250A, VGS=0V | 600 | - | - | V |
| Breakdown Voltage Temperature Coefficient | BVDSS/TJ | ID=1mA, referenced to 25 | - | 0.6 | - | V/ |
| Zero Gate Voltage Drain Current | IDSS | VDS=600V, VGS=0V, Tj=25 | - | - | 10 | A |
| Zero Gate Voltage Drain Current | IDSS | VDS=480V, VGS=0V, Tj=125 | - | - | 100 | A |
| Gate-body leakage current, forward | IGSSF | VDS=0V, VGS=30V | - | - | 100 | nA |
| Gate-body leakage current, reverse | IGSSR | VDS=0V, VGS=-30V | - | - | -100 | nA |
| On-Characteristics | ||||||
| Gate Threshold Voltage | VGS(th) | VDS=VGS, ID=250A | 2.0 | - | 4.0 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V, ID=1A | - | 3.8 | 4.5 | |
| Forward Transconductance | gfs | VDS=40V, ID=1.0A (note 4) | - | 2.05 | - | S |
| Dynamic Characteristics | ||||||
| Input capacitance | Ciss | VDS=25V, VGS=0V, f=1.0MHz | - | 266 | 560 | pF |
| Output capacitance | Coss | - | - | 37.4 | 70 | pF |
| Reverse transfer capacitance | Crss | - | - | 2.33 | 10 | pF |
| Switching Characteristics | ||||||
| Turn-On delay time | td(on) | VDD=300V,ID=2.0A,RG=25 (note 4,5) | - | 17.2 | 50 | ns |
| Turn-On rise time | tr | - | - | 132 | 280 | ns |
| Turn-Off delay time | td(off) | - | - | 25.5 | 60 | ns |
| Turn-Off Fall time | tf | - | - | 11 | 35 | ns |
| Total Gate Charge | Qg | VDS=480V, ID=2.0A VGS=10V (note 4,5) | - | 5.9 | 11 | nC |
| Gate-Source charge | Qgs | - | - | 1.24 | - | nC |
| Gate-Drain charge | Qgd | - | - | 1.9 | - | nC |
| Drain-Source Diode Characteristics and Maximum Ratings | ||||||
| Maximum Continuous Drain-Source Diode Forward Current | IS | - | - | - | 1.9 | A |
| Maximum Pulsed Drain-Source Diode Forward Current | ISM | - | - | - | 6.0 | A |
| Drain-Source Diode Forward Voltage | VSD | VGS=0V, IS=2.0A | - | - | 1.4 | V |
| Reverse recovery time | trr | VGS=0V, IS=2.0A dIF/dt=100A/s (note 4) | - | 230 | - | ns |
| Reverse recovery charge | Qrr | - | - | 1.0 | - | C |
Thermal Characteristics
| Parameter | Symbol | Max | Unit | JCS2N60VB/RB /MB/MFB | JCS2N60CB | JCS2N60FB |
| Thermal Resistance, Junction to Case | Rth(j-c) | 2.87 | /W | X | ||
| Thermal Resistance, Junction to Case | Rth(j-c) | 2.32 | /W | X | ||
| Thermal Resistance, Junction to Case | Rth(j-c) | 3.09 | /W | X | ||
| Thermal Resistance, Junction to Ambient | Rth(j-A) | 110 | /W | X | ||
| Thermal Resistance, Junction to Ambient | Rth(j-A) | 62.5 | /W | X | ||
| Thermal Resistance, Junction to Ambient | Rth(j-A) | 40.88 | /W | X |
2409280132_Jilin-Sino-Microelectronics-JCS2N60VB-IPAK_C272511.pdf
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