Silicon Planar Zener Diode Jingdao Microelectronics MM3Z5V6W with 300mW Power Dissipation and 5 Percent Tolerance
Key Attributes
Model Number:
MM3Z5V6W
Product Custom Attributes
Operating Junction Temperature Range:
-55℃~+150℃
Impedance(Zzt):
80Ω
Diode Configuration:
Independent
Zener Voltage(Range):
5.2V~6V
Pd - Power Dissipation:
300mW
Zener Voltage(Nom):
5.6V
Mfr. Part #:
MM3Z5V6W
Package:
SOD-323W
Product Description
Product Overview
Silicon Planar Zener Diodes with a wide zener reverse voltage range from 2.0V to 75V. These diodes offer a total power dissipation of Max. 300mW and come in a small plastic package suitable for surface-mounted designs. They feature a tolerance of approximately 5%.
Product Attributes
- Brand: Jingdao Microelectronics co.LTD
- Origin: Shandong, China
- Package Type: SOD-323W
- Mechanical Data: Case: SOD-323W, Terminals: Solderable per MIL-STD-750, Method 2026, Approx. Weight: 5.48mg / 0.00019oz
Technical Specifications
| Type | Marking | Zener Voltage Range (VZT) Nom (V) | Zener Voltage Range (VZT) Min (V) | Zener Voltage Range (VZT) Max (V) | ZT (mA) | ZZT Max () | IR Max (A) | VF Max (V) | RJA (C/W) |
| MM3Z2V0W | B0 | 2.0 | 1.8 | 2.2 | 100 | 100 | 2 | 0.9 | 417 |
| MM3Z2V2W | C0 | 2.2 | 2.08 | 2.33 | 100 | 100 | 2 | 0.9 | 417 |
| MM3Z2V4W | 1C | 2.4 | 2.15 | 2.56 | 100 | 100 | 2 | 0.9 | 417 |
| MM3Z2V7W | 1D | 2.7 | 2.5 | 2.9 | 100 | 100 | 2 | 0.9 | 417 |
| MM3Z3V0W | 1E | 3.0 | 2.7 | 3.2 | 100 | 100 | 2 | 0.9 | 417 |
| MM3Z3V3W | 1F | 3.3 | 3.0 | 3.5 | 100 | 100 | 2 | 0.9 | 417 |
| MM3Z3V6W | 1H | 3.6 | 3.1 | 3.8 | 100 | 100 | 2 | 0.9 | 417 |
| MM3Z3V9W | 1J | 3.9 | 3.4 | 4.1 | 100 | 100 | 2 | 0.9 | 417 |
| MM3Z4V3W | 1K | 4.3 | 3.7 | 4.6 | 100 | 100 | 2 | 0.9 | 417 |
| MM3Z4V7W | 1M | 4.7 | 4 | 4.8 | 100 | 100 | 2 | 0.9 | 417 |
| MM3Z5V1W | 1N | 5.1 | 4.4 | 5.2 | 100 | 100 | 2 | 0.9 | 417 |
| MM3Z5V6W | 1P | 5.6 | 4.8 | 5.8 | 100 | 100 | 2 | 0.9 | 417 |
| MM3Z6V2W | 1R | 6.2 | 5.2 | 6.4 | 100 | 100 | 2 | 0.9 | 417 |
| MM3Z6V8W | 1X | 6.8 | 5.6 | 7 | 100 | 100 | 2 | 0.9 | 417 |
| MM3Z7V5W | 1Y | 7.5 | 6.2 | 7.7 | 100 | 100 | 2 | 0.9 | 417 |
| MM3Z8V2W | 1Z | 8.2 | 6.8 | 8.5 | 100 | 100 | 2 | 0.9 | 417 |
| MM3Z9V1W | 2A | 9.1 | 7.5 | 9.4 | 100 | 100 | 2 | 0.9 | 417 |
| MM3Z10W | 2B | 10 | 8.5 | 10.4 | 100 | 80 | 2 | 0.9 | 417 |
| MM3Z11W | 2C | 11 | 9.4 | 11.4 | 100 | 50 | 2 | 0.9 | 417 |
| MM3Z12W | 2D | 12 | 10.4 | 12.4 | 100 | 30 | 2 | 0.9 | 417 |
| MM3Z13W | 2E | 13 | 11.4 | 13.8 | 100 | 30 | 2 | 0.9 | 417 |
| MM3Z15W | 2F | 15 | 12.7 | 15.3 | 100 | 30 | 2 | 0.9 | 417 |
| MM3Z16W | 2H | 16 | 13.8 | 16.8 | 100 | 30 | 2 | 0.9 | 417 |
| MM3Z18W | 2J | 18 | 15.6 | 18.8 | 100 | 30 | 2 | 0.9 | 417 |
| MM3Z20W | 2K | 20 | 17.1 | 20.8 | 100 | 35 | 2 | 0.9 | 417 |
| MM3Z22W | 2M | 22 | 19.1 | 22.8 | 100 | 35 | 2 | 0.9 | 417 |
| MM3Z24W | 2N | 24 | 21.2 | 25.1 | 100 | 40 | 2 | 0.9 | 417 |
| MM3Z27W | 2P | 27 | 23.3 | 28 | 100 | 40 | 2 | 0.9 | 417 |
| MM3Z30W | 2R | 30 | 25.6 | 31 | 100 | 45 | 2 | 0.9 | 417 |
| MM3Z33W | 2X | 33 | 28.9 | 34 | 100 | 50 | 2 | 0.9 | 417 |
| MM3Z36W | 2Y | 36 | 32 | 37 | 100 | 55 | 2 | 0.9 | 417 |
| MM3Z39W | 2Z | 39 | 35 | 40 | 100 | 60 | 2 | 0.9 | 417 |
| MM3Z43W | 3A | 43 | 38 | 46 | 100 | 70 | 2 | 0.9 | 417 |
| MM3Z47W | 3B | 47 | 41 | 50 | 100 | 80 | 2 | 0.9 | 417 |
| MM3Z51W | 3C | 51 | 46 | 54 | 100 | 80 | 2 | 0.9 | 417 |
| MM3Z56W | 3D | 56 | 50 | 60 | 100 | 90 | 2 | 0.9 | 417 |
| MM3Z62W | 3E | 62 | 56 | 66 | 100 | 100 | 2 | 0.9 | 417 |
| MM3Z68W | 3F | 68 | 60 | 72 | 100 | 130 | 2 | 0.9 | 417 |
| MM3Z75W | 3H | 75 | 66 | 79 | 100 | 150 | 2 | 0.9 | 417 |
| Parameter | Symbol | Value | Unit |
| Total power dissipation | Ptot | 300 | mW |
| Operating and Storage Temperature Range | Tj, Tstg | -55 ~ +150 | C |
| Forward Voltage at IF = 10 mA | VF | 0.9 | V |
| Typical thermal resistance junction to ambient | RJA | 417 (1) | C/W |
2410010301_Jingdao-Microelectronics-MM3Z5V6W_C2962423.pdf
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