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quality Surface Mount Zener Diode Jingdao Microelectronics BZT52C36 with 500mW Power Dissipation and SOD123 Package factory
quality Surface Mount Zener Diode Jingdao Microelectronics BZT52C36 with 500mW Power Dissipation and SOD123 Package factory

Surface Mount Zener Diode Jingdao Microelectronics BZT52C36 with 500mW Power Dissipation and SOD123 Package

Key Attributes
Model Number: BZT52C36
Product Custom Attributes
Operating Junction Temperature Range:
-55℃~+150℃
Impedance(Zzt):
90Ω
Diode Configuration:
Independent
Zener Voltage(Range):
34V~38V
Pd - Power Dissipation:
500mW
Zener Voltage(Nom):
36V
Impedance(Zzk):
350Ω
Mfr. Part #:
BZT52C36
Package:
SOD-123
Product Description

Product Overview

Surface Mount Zener Diodes with a total power dissipation of up to 500mW. These diodes offer a wide zener reverse voltage range from 2.0V to 39V and are housed in a small plastic package (SOD-123) suitable for surface-mounted designs. They are ideal for applications requiring precise voltage regulation in compact electronic systems.

Product Attributes

  • Brand: Jingdao Microelectronics ()
  • Origin: China
  • Package Type: SOD-123
  • Certifications: Solderable per MIL-STD-750, Method 2026

Technical Specifications

Type Zener Voltage Range (VZ at IZT) Test Current (IZT) Max. Zener Impedance (ZZT at IZT) Max. Reverse Current (IR at VR) Typical Temperature Coefficient (mV/C) Forward Voltage (VF at IF = 10 mA) Power Dissipation (PD) Operating & Storage Temp. Range
BZT52C2V0 2.0 (Nom) 5 100 150 A -3.5 0.9 V 500 mW -55 ~ +150 C
BZT52C2V4 2.4 (Nom) 5 100 50 A -3.5 0.9 V 500 mW -55 ~ +150 C
BZT52C2V7 2.7 (Nom) 5 100 20 A -3.5 0.9 V 500 mW -55 ~ +150 C
BZT52C3V0 3.0 (Nom) 5 95 10 A -3.5 0.9 V 500 mW -55 ~ +150 C
BZT52C3V3 3.3 (Nom) 5 95 5.0 A -3.5 0.9 V 500 mW -55 ~ +150 C
BZT52C3V6 3.6 (Nom) 5 90 5.0 A -3.5 0.9 V 500 mW -55 ~ +150 C
BZT52C3V9 3.9 (Nom) 5 90 3.0 A -3.5 0.9 V 500 mW -55 ~ +150 C
BZT52C4V3 4.3 (Nom) 5 90 3.0 A -3.5 0.9 V 500 mW -55 ~ +150 C
BZT52C4V7 4.7 (Nom) 5 80 3.0 A -3.5 0.9 V 500 mW -55 ~ +150 C
BZT52C5V1 5.1 (Nom) 5 60 2.0 A -2.7 0.9 V 500 mW -55 ~ +150 C
BZT52C5V6 5.6 (Nom) 5 40 1.0 A -2 0.9 V 500 mW -55 ~ +150 C
BZT52C6V2 6.2 (Nom) 5 10 3.0 A 0.4 0.9 V 500 mW -55 ~ +150 C
BZT52C6V8 6.8 (Nom) 5 15 2.0 A 1.2 0.9 V 500 mW -55 ~ +150 C
BZT52C7V5 7.5 (Nom) 5 15 1.0 A 2.5 0.9 V 500 mW -55 ~ +150 C
BZT52C8V2 8.2 (Nom) 5 15 0.7 A 3.2 0.9 V 500 mW -55 ~ +150 C
BZT52C9V1 9.1 (Nom) 5 20 0.5 A 3.8 0.9 V 500 mW -55 ~ +150 C
BZT52C10 10 (Nom) 5 20 0.2 A 4.5 0.9 V 500 mW -55 ~ +150 C
BZT52C11 11 (Nom) 5 25 0.1 A 5.4 0.9 V 500 mW -55 ~ +150 C
BZT52C12 12 (Nom) 5 30 0.1 A 6.0 0.9 V 500 mW -55 ~ +150 C
BZT52C13 13 (Nom) 5 30 0.1 A 7.0 0.9 V 500 mW -55 ~ +150 C
BZT52C15 15 (Nom) 5 40 0.1 A 9.2 0.9 V 500 mW -55 ~ +150 C
BZT52C16 16 (Nom) 5 45 0.1 A 10.4 0.9 V 500 mW -55 ~ +150 C
BZT52C18 18 (Nom) 5 55 0.1 A 12.4 0.9 V 500 mW -55 ~ +150 C
BZT52C20 20 (Nom) 5 55 0.1 A 14.4 0.9 V 500 mW -55 ~ +150 C
BZT52C22 22 (Nom) 5 70 0.1 A 16.4 0.9 V 500 mW -55 ~ +150 C
BZT52C24 24 (Nom) 5 80 0.1 A 18.4 0.9 V 500 mW -55 ~ +150 C
BZT52C27 27 (Nom) 5 80 0.1 A 21.4 0.9 V 500 mW -55 ~ +150 C
BZT52C30 30 (Nom) 2 100 0.1 A 24.4 0.9 V 500 mW -55 ~ +150 C
BZT52C33 33 (Nom) 2 130 0.1 A 27.4 0.9 V 500 mW -55 ~ +150 C
BZT52C36 36 (Nom) 2 150 0.1 A 30.4 0.9 V 500 mW -55 ~ +150 C
BZT52C39 39 (Nom) 2 150 0.1 A 33.4 0.9 V 500 mW -55 ~ +150 C

2304140030_Jingdao-Microelectronics-BZT52C36_C353534.pdf

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