Jilin Sino Microelectronics JCS12N65FT N channel MOSFET with low Crss capacitance and fast switching
Key Attributes
Model Number:
JCS12N65FT
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
12A
Operating Temperature -:
-55℃~+150℃
RDS(on):
780mΩ@10V
Gate Threshold Voltage (Vgs(th)):
5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
31pF
Number:
-
Output Capacitance(Coss):
229pF
Input Capacitance(Ciss):
2.41nF
Pd - Power Dissipation:
51W
Gate Charge(Qg):
52nC@10V
Mfr. Part #:
JCS12N65FT
Package:
TO-220F-3
Product Description
N-CHANNEL MOSFET JCS12N65T
The JCS12N65T is a high-efficiency N-channel enhancement mode MOSFET designed for various power applications. It features low gate charge, low Crss (typical 23pF), fast switching speeds, and improved dv/dt capability. The product is 100% avalanche tested and RoHS compliant. It is suitable for high-frequency switch mode power supplies, electronic lamp ballasts, and LED power supplies.
Product Attributes
- Brand: Jilin Sino-microelectronics Co., Ltd
- Certifications: RoHS
Technical Specifications
| Order Codes | Marking | Package | ID (A) | VDSS (V) | Rdson-max (@Vgs=10V) () | Qg-typ (nC) |
| JCS12N65BT-B-B, JCS12N65BT-B-BR | JCS12N65BT | TO-262 | 12.0 | 650 | 0.78 | 39 |
| JCS12N65ST-S-B, JCS12N65ST-S-BR, JCS12N65ST-S-A, JCS12N65ST-S-AR | JCS12N65ST | TO-263 | 12.0 | 650 | 0.78 | 39 |
| JCS12N65CT-C-B, JCS12N65CT-C-BR | JCS12N65CT | TO-220C | 12.0 | 650 | 0.78 | 39 |
| JCS12N65FT-F-B, JCS12N65FT-F-BR | JCS12N65FT | TO-220MF | 12.0 | 650 | 0.78 | 39 |
| JCS12N65FT-F2-B, JCS12N65FT-F2-BR | JCS12N65FT | TO-220MF-K2 | 12.0 | 650 | 0.78 | 39 |
Absolute Maximum Ratings
| Parameter | Symbol | Value | Unit |
| Drain-Source Voltage | VDSS | 650 | V |
| Continuous Drain Current (Tc=25) | ID | 12* | A |
| Continuous Drain Current (Tc=100) | ID | 7.6* | A |
| Drain Current pulse (note 1) | IDM | 48* | A |
| Gate-Source Voltage | VGSS | 30 | V |
| Single Pulsed Avalanche Energy (note 2) | EAS | 880 | mJ |
| Avalanche Current (note 1) | IAR | 12 | A |
| Repetitive Avalanche Current (note 1) | EAR | 25 | mJ |
| Peak Diode Recovery dv/dt (note 3) | dv/dt | 4.5 | V/ns |
| Power Dissipation (TC=25) | PD | 250 | W |
| Power Dissipation -Derate above 25 | - | 2 | W/ |
| Operating and Storage Temperature Range | TJ, TSTG | -55+150 | |
| Maximum Lead Temperature for Soldering Purposes | TL | 300 |
Electrical Characteristics
| Parameter | Symbol | Test conditions | Min | Typ | Max | Unit |
| Drain-Source Voltage | BVDSS | ID=250A, VGS=0V | 650 | - | - | V |
| Breakdown Voltage Temperature Coefficient | BVDSS/ TJ | ID=250A, referenced to 25 | - | 0.5 | - | V/ |
| Zero Gate Voltage Drain Current | IDSS | VDS=650V,VGS=0V, TC=25 | - | - | 1 | A |
| Zero Gate Voltage Drain Current | IDSS | VDS=480V, TC=125 | - | - | 10 | A |
| Gate-body leakage current, forward | IGSSF | VDS=0V, VGS =30V | - | - | 100 | nA |
| Gate-body leakage current, reverse | IGSSR | VDS=0V, VGS =-30V | - | - | -100 | nA |
| Gate Threshold Voltage | VGS(th) | VDS = VGS , ID=250A | 3.0 | - | 5.0 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =10V , ID=6A, 25 | - | 0.64 | 0.78 | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =10V , ID=6A, 100 | - | 1.24 | 1.8 | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =10V , ID=6A, 150 | - | 1.85 | 2.5 | |
| Forward Transconductance | gfs | VDS = 40V, ID=6Anote 4 | - | 13 | - | S |
| Gate resistance | Rg | F=1.0MHZ open drain | - | 0.3 | 4.0 | |
| Input capacitance | Ciss | VDS=25V, VGS =0V, f=1.0MHZ | - | 800 | 2410 | pF |
| Output capacitance | Coss | VDS=25V, VGS =0V, f=1.0MHZ | - | 80 | 229 | pF |
| Reverse transfer capacitance | Crss | VDS=25V, VGS =0V, f=1.0MHZ | - | 10 | 31 | pF |
| Turn-On delay time | td(on) | VDD=325V,ID=12A,RG=25 note 45 | - | 78 | 102 | ns |
| Turn-On rise time | tr | VDD=325V,ID=12A,RG=25 note 45 | - | 133 | 175 | ns |
| Turn-Off delay time | td(off) | VDD=325V,ID=12A,RG=25 note 45 | - | 233 | 305 | ns |
| Turn-Off Fall time | tf | VDD=325V,ID=12A,RG=25 note 45 | - | 104 | 160 | ns |
| Total Gate Charge | Qg | VDS =520V , ID=12A VGS =10V note 45 | - | 39 | 52 | nC |
| Gate-Source charge | Qgs | VDS =520V , ID=12A VGS =10V note 45 | - | 8.5 | 20 | nC |
| Gate-Drain charge | Qgd | VDS =520V , ID=12A VGS =10V note 45 | - | 20 | 50 | nC |
| Maximum Continuous Drain -Source Diode Forward Current | IS | - | - | - | 12 | A |
| Maximum Pulsed Drain-Source Diode Forward Current | ISM | - | - | - | 48 | A |
| Drain-Source Diode Forward Voltage | VSD | VGS=0V, IS=12A | - | - | 1.39 | V |
| Reverse recovery time | trr | VGS=0V, IS=12A dIF/dt=100A/s (note 4) | - | 418 | 900 | ns |
| Reverse recovery charge | Qrr | VGS=0V, IS=12A dIF/dt=100A/s (note 4) | - | 4.85 | 10.0 | C |
Thermal Characteristics
| Parameter | Symbol | JCS12N65BT/ST/CT | JCS12N65FT | Unit |
| Thermal Resistance, Junction to Case | Rth(j-c) | 0.5 | 2.45 | /W |
| Thermal Resistance, Junction to Ambient | Rth(j-A) | 62.5 | 62.5 | /W |
2411201840_Jilin-Sino-Microelectronics-JCS12N65FT_C2693275.pdf
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