N channel MOSFET Jilin Sino Microelectronics JCS4N60VC IPAK for in electronic ballasts and LED drivers
Key Attributes
Model Number:
JCS4N60VC-IPAK
Product Custom Attributes
Drain To Source Voltage:
600V
Current - Continuous Drain(Id):
4A
Operating Temperature -:
-55℃~+150℃
RDS(on):
2.5Ω@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
15pF
Number:
-
Input Capacitance(Ciss):
860pF
Output Capacitance(Coss):
100pF
Pd - Power Dissipation:
159.2W
Gate Charge(Qg):
25nC@480V
Mfr. Part #:
JCS4N60VC-IPAK
Package:
TO-251
Product Description
Product Overview
The JCS4N60C is a N-channel enhancement mode MOSFET designed for high-frequency switching power supplies, electronic ballasts, and LED power supplies. It features low gate charge, low Crss, fast switching speed, 100% avalanche tested, and improved dv/dt capability. This RoHS compliant product is available in various package types.
Product Attributes
- Brand: JCS
- Origin: China
- Certifications: RoHS
Technical Specifications
| Order Code | Marking | Package | ID (A) | VDSS (V) | Rdson (Typ) () | Rdson (Max) () | Qg-typ (nC) |
| JCS4N60VC-V-B / JCS4N60VC-V-BR | N/A | IPAK | 4.0 | 600 | 2.0 | 2.5 | 17.5 |
| JCS4N60VC-V2-B / JCS4N60VC-V2-BR | N/A | IPAK-S2 | 4.0 | 600 | 2.0 | 2.5 | 17.5 |
| JCS4N60CC-C-B / JCS4N60CC-C-BR | N/A | TO-220C | 4.0 | 600 | 2.0 | 2.5 | 17.5 |
| JCS4N60FC-F-B / JCS4N60FC-F-BR | N/A | TO-220MF | 4.0 | 600 | 2.0 | 2.5 | 17.5 |
| JCS4N60FC-F2-B / JCS4N60FC-F2-BR | N/A | TO-220MF-K2 | 4.0 | 600 | 2.0 | 2.5 | 17.5 |
| JCS4N60RC-R-B / JCS4N60RC-R-BR / JCS4N60RC-R-A / JCS4N60RC-R-AR | JCS4N60R | DPAK | 4.0 | 600 | 2.0 | 2.5 | 17.5 |
| JCS4N60BC-B-B / JCS4N60BC-B-BR | N/A | TO-262 | 4.0 | 600 | 2.0 | 2.5 | 17.5 |
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Off Characteristics | ||||||
| Drain-Source Voltage | BVDSS | ID=250A, VGS=0V | 600 | - | - | V |
| Breakdown Voltage Temperature Coefficient | BVDSS/ TJ | ID=250A, referenced to 25 | - | 0.6 | - | V/ |
| Zero Gate Voltage Drain Current | IDSS | VDS=600V,VGS=0V, TC=25 | - | - | 10 | A |
| Zero Gate Voltage Drain Current | IDSS | VDS=480V, TC=125 | - | - | 100 | A |
| Gate-body leakage current, forward | IGSSF | VDS=0V, VGS =30V | - | - | 100 | nA |
| Gate-body leakage current, reverse | IGSSR | VDS=0V, VGS =-30V | - | - | -100 | nA |
| On-Characteristics | ||||||
| Gate Threshold Voltage | VGS(th) | VDS = VGS , ID=250A | 2.0 | - | 4.0 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =10V , ID=2.0A, 25 | - | 2.0 | 2.5 | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =10V , ID=2.0A, 100 | - | 3.5 | 4.1 | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =10V , ID=2.0A, 150 | - | 5.2 | 5.8 | |
| Forward Transconductance | gfs | VDS = 40V , ID=2.0A | - | 1.8 | - | S |
| Dynamic Characteristics | ||||||
| Gate resistance | Rg | F=1.0MHZ open drain | - | 0.8 | 5.5 | |
| Input capacitance | Ciss | VDS=25V, VGS =0V, f=1.0MHZ | - | 642.1 | 860 | pF |
| Output capacitance | Coss | VDS=25V, VGS =0V, f=1.0MHZ | - | 70.82 | 100 | pF |
| Reverse transfer capacitance | Crss | VDS=25V, VGS =0V, f=1.0MHZ | - | 3.06 | 15 | pF |
| Switching Characteristics | ||||||
| Turn-On delay time | td(on) | VDD=300V,ID=4.0A,RG=25 | - | 9.6 | 20 | ns |
| Turn-On rise time | tr | VDD=300V,ID=4.0A,RG=25 | - | 23.6 | 50 | ns |
| Turn-Off delay time | td(off) | VDD=300V,ID=4.0A,RG=25 | - | 38.8 | 80 | ns |
| Turn-Off Fall time | tf | VDD=300V,ID=4.0A,RG=25 | - | 26.4 | 70 | ns |
| Total Gate Charge | Qg | VDS =480V , ID=4.0A, VGS =10V | - | 17.5 | 25 | nC |
| Gate-Source charge | Qgs | VDS =480V , ID=4.0A, VGS =10V | - | 4.3 | 8 | nC |
| Gate-Drain charge | Qgd | VDS =480V , ID=4.0A, VGS =10V | - | 4.66 | 9 | nC |
| Drain-Source Diode Characteristics and Maximum Ratings | ||||||
| Maximum Continuous Drain -Source Diode Forward Current | IS | - | - | - | 4 | A |
| Maximum Pulsed Drain-Source Diode Forward Current | ISM | - | - | - | 16 | A |
| Drain-Source Diode Forward Voltage | VSD | VGS=0V, IS=4.0A | - | - | 1.4 | V |
| Reverse recovery time | trr | VGS=0V, IS=4.0A dIF/dt=100A/s | - | 380.7 | 900 | ns |
| Reverse recovery charge | Qrr | VGS=0V, IS=4.0A dIF/dt=100A/s | - | 1.555 | 4.0 | C |
2409280102_Jilin-Sino-Microelectronics-JCS4N60VC-IPAK_C272521.pdf
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