Jilin Sino Microelectronics JCS20N65FH 220MF N channel transistor avalanche tested for power switching
Key Attributes
Model Number:
JCS20N65FH-220MF
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
20A
Operating Temperature -:
-
RDS(on):
500mΩ@10V
Gate Threshold Voltage (Vgs(th)):
5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
11pF@25V
Number:
1 N-channel
Output Capacitance(Coss):
250pF
Input Capacitance(Ciss):
4nF@25V
Pd - Power Dissipation:
62.2W
Gate Charge(Qg):
80nC@10V
Mfr. Part #:
JCS20N65FH-220MF
Package:
TO-220F-3
Product Description
Product Overview
The JCS20N65H is an N-channel enhancement mode field-effect transistor designed for high-frequency switching power supplies, electronic ballasts, and LED power supplies. It features low gate charge, low Crss, fast switching speed, 100% avalanche tested, improved dv/dt capability, and is RoHS compliant.
Product Attributes
- Brand: Jilin Sino-microelectronics Co., Ltd.
- Certifications: RoHS
Technical Specifications
| Order Codes | Marking | Package | ID (A) | VDSS (V) | Rds(on)-max (@Vgs=10V) () | Qg-typ (nC) |
| JCS20N65FH-F-B / JCS20N65FH-F-BR | N/A | TO-220MF | 20 | 650 | 0.5 | 45 |
| JCS20N65WH-GE-B / JCS20N65WH-GE-BR | N/A | TO-247 | 20 | 650 | 0.5 | 45 |
| Parameter | Symbol | Value | Unit | Test Conditions |
| Drain-Source Voltage | VDSS | 650 | V | - |
| Continuous Drain Current | ID | 20 (T=25), 12.5 (T=100) | A | - |
| Pulsed Drain Current | IDM | 80 | A | Note 1 |
| Gate-Source Voltage | VGSS | 30 | V | - |
| Single Pulsed Avalanche Energy | EAS | 108 | mJ | Note 2 |
| Avalanche Current | IAR | 20 | A | Note 1 |
| Repetitive Avalanche Energy | EAR | 20.7 | mJ | Note 1 |
| Peak Diode Recovery dv/dt | dv/dt | 50 | V/ns | Note 3 |
| Power Dissipation | PD | 500 (TC=25) | W | -Derate above 25: 4.0 W/ |
| Operating and Storage Temperature Range | TJ, TSTG | -55+150 | - | |
| Maximum Lead Temperature for Soldering | TL | 300 | - | |
| Drain-Source Breakdown Voltage | BVDSS | 650 | V | ID=250A, VGS=0V |
| Breakdown Voltage Temperature Coefficient | BVDSS/TJ | 0.5 | V/ | ID=250A, referenced to 25 |
| Zero Gate Voltage Drain Current | IDSS | 10 (VDS=650V,VGS=0V, TC=25), 100 (VDS=520V, TC=125) | A | - |
| Gate-body leakage current, forward | IGSSF | 100 | nA | VDS=0V, VGS =30V |
| Gate-body leakage current, reverse | IGSSR | -100 | nA | VDS=0V, VGS =-30V |
| Gate Threshold Voltage | VGS(th) | 3.0 - 5.0 | V | VDS = VGS , ID=250A |
| Static Drain-Source On-Resistance | RDS(ON) | 0.44 - 0.5 | VGS =10V , ID=10A | |
| Input capacitance | Ciss | 2550 - 4000 | pF | VDS=25V, VGS =0V, f=1.0MHZ |
| Output capacitance | Coss | 250 | pF | - |
| Reverse transfer capacitance | Crss | 11 | pF | - |
| Turn-On delay time | td(on) | 56 - 128 | ns | VDD=300V,ID=20A,RG=25 (note 4, 5) |
| Turn-On rise time | tr | 140 - 270 | ns | - |
| Turn-Off delay time | td(off) | 80 - 350 | ns | - |
| Turn-Off Fall time | tf | 50 - 120 | ns | - |
| Total Gate Charge | Qg | 45 - 80 | nC | VDS =520V , ID=20A VGS =10V (note 4, 5) |
| Gate-Source charge | Qgs | 15.0 | nC | - |
| Gate-Drain charge | Qgd | 17 | nC | - |
| Maximum Continuous Drain -Source Diode Forward Current | IS | 20 | A | - |
| Maximum Pulsed Drain-Source Diode Forward Current | ISM | 80 | A | - |
| Drain-Source Diode Forward Voltage | VSD | 1.45 | V | VGS=0V, IS=20A |
| Reverse recovery time | trr | 660 | ns | VGS=0V, IS=20A dIF/dt=100A/s (note 4) |
| Reverse recovery charge | Qrr | 9.3 | C | - |
| Thermal Resistance, Junction to Case | Rth(j-c) | 0.25 (JCS20N65WH), 2.01 (JCS20N65FH) | /W | - |
| Thermal Resistance, Junction to Ambient | Rth(j-A) | 29.8 (JCS20N65WH), 39.7 (JCS20N65FH) | /W | - |
2411201842_Jilin-Sino-Microelectronics-JCS20N65FH-220MF_C272565.pdf
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