N Channel MOSFET Jilin Sino Microelectronics JCS5N50RC DPAK Featuring Low Crss and Avalanche Tested
Key Attributes
Model Number:
JCS5N50RC-DPAK
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
500V
Current - Continuous Drain(Id):
5A
Operating Temperature -:
-55℃~+150℃
RDS(on):
1.45Ω@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Reverse Transfer Capacitance (Crss@Vds):
19pF
Number:
1 N-channel
Output Capacitance(Coss):
102pF
Input Capacitance(Ciss):
613pF
Pd - Power Dissipation:
91W
Gate Charge(Qg):
20nC@10V
Mfr. Part #:
JCS5N50RC-DPAK
Package:
DPAK
Product Description
Product Overview
The JCS5N50C is an N-channel MOSFET designed for high-frequency switching power supplies, electronic ballasts, and UPS systems. It features low gate charge, low Crss (typical 14pF), fast switching speed, 100% avalanche tested, and improved dv/dt capability. This product is RoHS compliant.
Product Attributes
- Brand: JCS
- Type: N-CHANNEL MOSFET
- Certifications: RoHS
Technical Specifications
| Order Code | Marking | Package | Main Characteristics | ID (A) | VDSS (V) | Rdson (Vgs=10V) () | Qg (nC) |
| JCS5N50VC-V-B / JCS5N50VC-V-BR | N/A | IPAK | Main | 5 | 500 | 1.45 | 14 |
| JCS5N50RC-R-B / JCS5N50RC-R-BR / JCS5N50RC-R-A / JCS5N50RC-R-AR | JCS5N50RC | DPAK | Main | 5 | 500 | 1.45 | 14 |
| JCS5N50CC-C-B / JCS5N50CC-C-BR | N/A | TO-220C | Main | 5 | 500 | 1.45 | 14 |
| JCS5N50FC-F-B / JCS5N50FC-F-BR | N/A | TO-220MF | Main | 5 | 500 | 1.45 | 14 |
Absolute Maximum Ratings (Tc=25)
| Parameter | Symbol | JCS5N50VC/RC | JCS5N50CC | JCS5N50FC | Unit |
| Drain-Source Voltage | VDSS | 500 | 500 | 500 | V |
| Drain Current -continuous | ID (T=25) | 5 | 5 | 5 | A |
| Drain Current -continuous | ID (T=100) | 3.16* | 3.16* | 3.16* | A |
| Drain Current - pulse (note 1) | IDM | 20* | 20* | 20* | A |
| Gate-Source Voltage | VGSS | 30 | V | ||
| Single Pulsed Avalanche Energy (note 2) | EAS | 145.8 | mJ | ||
| Avalanche Current (note 1) | IAR | 5 | A | ||
| Repetitive Avalanche Energy (note 1) | EAR | 10.1 | mJ | ||
| Peak Diode Recovery dv/dt (note 3) | dv/dt | 4.5 | V/ns | ||
| Power Dissipation (TC=25) | PD | 91 | 101 | 41 | W |
| Power Dissipation -Derate above 25 | 0.73 | 0.81 | 0.33 | W/ | |
| Operating and Storage Temperature Range | TJ, TSTG | -55+150 | |||
| Maximum Lead Temperature for Soldering Purposes | TL | 300 | |||
Electrical Characteristics
| Parameter | Symbol | Tests conditions | Min | Typ | Max | Unit |
| Off-Characteristics | ||||||
| Drain-Source Voltage | BVDSS | ID=250A, VGS=0V | 500 | - | - | V |
| Breakdown Voltage Temperature Coefficient | BVDSS/ TJ | ID=250A, referenced to 25 | - | 0.5 | - | V/ |
| Zero Gate Voltage Drain Current | IDSS | VDS=500V,VGS=0V, TC=25 | - | - | 10 | A |
| Zero Gate Voltage Drain Current | IDSS | VDS=400V, TC=125 | - | - | 100 | A |
| Gate-body leakage current, forward | IGSSF | VDS=0V, VGS =30V | - | - | 100 | nA |
| Gate-body leakage current, reverse | IGSSR | VDS=0V, VGS =-30V | - | - | -100 | nA |
| On-Characteristics | ||||||
| Gate Threshold Voltage | VGS(th) | VDS = VGS , ID=250A | 2.0 | - | 4.0 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =10V , ID=2.5A | - | 1.15 | 1.45 | |
| Forward Transconductance | gfs | VDS = 40V, ID=2.5Anote 4 | - | 5.5 | - | S |
| Dynamic Characteristics | ||||||
| Input capacitance | Ciss | VDS=25V, VGS =0V, f=1.0MHZ | - | 473 | 613 | pF |
| Output capacitance | Coss | VDS=25V, VGS =0V, f=1.0MHZ | - | 53 | 102 | pF |
| Reverse transfer capacitance | Crss | VDS=25V, VGS =0V, f=1.0MHZ | - | 14 | 19 | pF |
| Switching Characteristics | ||||||
| Turn-On delay time | td(on) | VDD=250V,ID=5A,RG=25 note 45 | - | 45 | 60 | ns |
| Turn-On rise time | tr | VDD=250V,ID=5A,RG=25 note 45 | - | 26 | 34 | ns |
| Turn-Off delay time | td(off) | VDD=250V,ID=5A,RG=25 note 45 | - | 133 | 170 | ns |
| Turn-Off Fall time | tf | VDD=250V,ID=5A,RG=25 note 45 | - | 214 | 270 | ns |
| Total Gate Charge | Qg | VDS =400V , ID=5A VGS =10V note 45 | - | 11.5 | 20 | nC |
| Gate-Source charge | Qgs | VDS =400V , ID=5A VGS =10V note 45 | - | 2.9 | 5.1 | nC |
| Gate-Drain charge | Qgd | VDS =400V , ID=5A VGS =10V note 45 | - | 5.1 | 8.4 | nC |
| Drain-Source Diode Characteristics and Maximum Ratings | ||||||
| Maximum Continuous Drain -Source Diode Forward Current | IS | - | - | 5 | A | |
| Maximum Pulsed Drain-Source Diode Forward Current | ISM | - | - | 20 | A | |
| Drain-Source Diode Forward Voltage | VSD | VGS=0V, IS=5A | - | - | 1.4 | V |
| Reverse recovery time | trr | VGS=0V, IS=5A dIF/dt=100A/s (note 4) | - | 268 | - | ns |
| Reverse recovery charge | Qrr | VGS=0V, IS=5A dIF/dt=100A/s (note 4) | - | 2.1 | - | C |
Thermal Characteristics
| Parameter | Symbol | JCS5N50VC/RC | JCS5N50CC | JCS5N50FC | Unit |
| Thermal Resistance, Junction to Case | Rth(j-c) | 1.38 | 1.23 | 3.08 | /W |
| Thermal Resistance, Junction to Ambient | Rth(j-A) | 110 | 62.5 | 62.5 | /W |
2411201841_Jilin-Sino-Microelectronics-JCS5N50RC-DPAK_C272534.pdf
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