N channel MOSFET Jilin Sino Microelectronics JCS2N60FC 220MF suitable for various power applications

Key Attributes
Model Number: JCS2N60FC-220MF
Product Custom Attributes
Drain To Source Voltage:
600V
Current - Continuous Drain(Id):
2A
Operating Temperature -:
-55℃~+150℃
RDS(on):
5Ω@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
10pF
Number:
1 N-channel
Output Capacitance(Coss):
100pF
Input Capacitance(Ciss):
590pF
Pd - Power Dissipation:
43.9W
Gate Charge(Qg):
15nC@10V
Mfr. Part #:
JCS2N60FC-220MF
Package:
TO-220F-3
Product Description

Product Overview

The JCS2N60C series is a range of high-performance N-channel MOSFETs designed for various power applications. These devices offer low gate charge, fast switching speeds, and improved dv/dt capability, making them suitable for high-efficiency switch mode power supplies, electronic lamp ballasts, and LED power supplies. They are 100% avalanche tested and RoHS compliant.

Product Attributes

  • Brand: Jilin Sino-microelectronics Co., Ltd.
  • Certifications: RoHS

Technical Specifications

Order Code Marking Package Device Weight Main Characteristics (ID) Main Characteristics (VDSS) Main Characteristics (Rdson-max) Main Characteristics (Qg-typ)
JCS2N60TC-O-T-N-A JCS2N60T TO-92 0.22 g(typ) 2.0 A 600 V 5.0 8.1 nC
JCS2N60VC-O-V-N-B JCS2N60V IPAK 0.35 g(typ) 2.0 A 600 V 5.0 8.1 nC
JCS2N60RC-O-R-N-B JCS2N60R DPAK 0.30 g(typ) 2.0 A 600 V 5.0 8.1 nC
JCS2N60RC-O-R-N-A JCS2N60R DPAK 0.30 g(typ) 2.0 A 600 V 5.0 8.1 nC
JCS2N60CC-O-C-N-B JCS2N60C TO-220C 2.15 g(typ) 2.0 A 600 V 5.0 8.1 nC
JCS2N60FC-O-F-N-B JCS2N60F TO-220MF 2.20 g(typ) 2.0 A 600 V 5.0 8.1 nC
JCS2N60FC-O-F1-N-B JCS2N60F TO-220MF-K1 1.78 g(typ) 2.0 A 600 V 5.0 8.1 nC
JCS2N60FC-O-F2-N-B JCS2N60F TO-220MF-K2 1.78 g(typ) 2.0 A 600 V 5.0 8.1 nC
Parameter Symbol Test Conditions Min Typ Max Unit
Off-Characteristics
Drain-Source Voltage BVDSS ID=250A, VGS=0V 600 - - V
Breakdown Voltage Temperature Coefficient BVDSS/TJ ID=1mA, referenced to 25 - 0.6 - V/
Zero Gate Voltage Drain Current IDSS VDS=600V,VGS=0V, TC=25 - - 10 A
Zero Gate Voltage Drain Current IDSS VDS=480V, TC=125 - - 100 A
Gate-body leakage current, forward IGSSF VDS=0V, VGS =30V - - 100 nA
Gate-body leakage current, reverse IGSSR VDS=0V, VGS =-30V - - -100 nA
On-Characteristics
Gate Threshold Voltage VGS(th) VDS = VGS , ID=250A 2.0 - 4.0 V
Static Drain-Source On-Resistance RDS(ON) VGS =10V , ID=1.0A - 3.8 5.0
Forward Transconductance gfs VDS = 40V , ID=1.0Anote 4 - 2.45 - S
Dynamic Characteristics
Input capacitance Ciss - - 312 590 pF
Output capacitance Coss - - 31 100 pF
Reverse transfer capacitance Crss VDS=25V, VGS =0V, f=1.0MHz - 3.1 10 pF
Switching Characteristics
Turn-On delay time td(on) - - 16.7 45 ns
Turn-On rise time tr - - 139 300 ns
Turn-Off delay time td(off) - - 35.1 90 ns
Turn-Off Fall time tf VDD=300V,ID=2.0A,RG=25 note 45 - 12.2 43 ns
Total Gate Charge Qg - - 8.1 15 nC
Gate-Source charge Qgs - - 1.29 - nC
Gate-Drain charge Qgd VDS =480V , ID=2.0A VGS =10V note 45 - 3.0 - nC
Drain-Source Diode Characteristics and Maximum Ratings
Maximum Continuous Drain-Source Diode Forward Current IS - - - 1.9 A
Maximum Pulsed Drain-Source Diode Forward Current ISM - - - 8.0 A
Drain-Source Diode Forward Voltage VSD VGS=0V, IS=2.0A - - 1.4 V
Reverse recovery time trr - - 247 - ns
Reverse recovery charge Qrr VGS=0V, IS=2.0A dIF/dt=100A/s (note 4) - 1.04 - C
Parameter Symbol Package Variants Value Unit
Thermal Resistance, Junction to Case Rth(j-c) JCS2N60 VC/RC, JCS2N60 FC 2.87 /W
Thermal Resistance, Junction to Case Rth(j-c) JCS2N60 TC 2.85 /W
Thermal Resistance, Junction to Case Rth(j-c) JCS2N60 CC 2.32 /W
Thermal Resistance, Junction to Ambient Rth(j-A) JCS2N60 VC/RC 110 /W
Thermal Resistance, Junction to Ambient Rth(j-A) JCS2N60 TC 120 /W
Thermal Resistance, Junction to Ambient Rth(j-A) JCS2N60 FC 40.1 /W

2411201843_Jilin-Sino-Microelectronics-JCS2N60FC-220MF_C272510.pdf

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