Surface mount glass passivated bridge rectifier Jingdao Microelectronics FTB15SM ideal for and rectification
Key Attributes
Model Number:
FTB15SM
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
50A
Operating Junction Temperature Range:
-55℃~+150℃@(Tj)
Voltage - Forward(Vf@If):
1.3V@1.5A
Current - Rectified:
1.5A
Voltage - DC Reverse(Vr):
1kV
Mfr. Part #:
FTB15SM
Package:
ABS
Product Description
Product Overview
This series of surface mount glass passivated bridge rectifiers offers high performance and reliability for various applications. Designed with glass-passivated chip junctions, these rectifiers provide excellent reverse recovery characteristics and are suitable for surface mount designs. They are ideal for applications requiring efficient rectification and fast switching speeds.
Product Attributes
- Brand: Jingdao Microelectronics ()
- Origin: China
- Material: Glass Passivated Chip Junction
- Package: ABS/LBF
Technical Specifications
| Model | Maximum DC Blocking Voltage (VDC) | Maximum RMS Voltage (VRMS) | Maximum Average Forward Rectified Current (IF(AV)) at T=125C (A) | Maximum Repetitive Peak Reverse Voltage (VRRM) (V) | Maximum Instantaneous Forward Voltage at 1.5A (VF) (V) | Maximum DC Reverse Current at Rated DC Blocking Voltage (IR) (A) | Maximum Reverse Recovery Time (trr) (ns) | Typical Junction Capacitance (Cj) at VR=4V, f=1MHz (pF) | Typical Thermal Resistance (RJA) (C/W) |
|---|---|---|---|---|---|---|---|---|---|
| FTB15SJ | 600 | 420 | 1.5 | 600 | 1.3 | 5 | 160 | 10 | 65 |
| FTB15SK | 800 | 560 | 1.5 | 800 | 1.3 | 5 | 160 | 10 | 65 |
| FTB15SM | 1000 | 700 | 1.5 | 1000 | 1.3 | 5 | 160 | 10 | 65 |
1806070736_Jingdao-Microelectronics-FTB15SM_C169508.pdf
Related Products
IGBT module YANGJIE MG200HF12MIC2 offering short circuit rating and fast soft reverse recovery diodes
Product OverviewThe MG200HF12MIC2 S-M304 is a high-performance IGBT module designed for demanding applications. It features short circuit rating, low stray inductance, and low switching losses, with a VCE(sat) exhibiting a positive temperature coefficient. This module offers fast switching and a ...
N Channel Enhancement Mode MOSFET YANGJIE YJG130G04CQ Ideal for Power Switching and DC DC Conversion
Product OverviewThe YJG130G04CQ is an N-Channel Enhancement Mode Field Effect Transistor from Yangzhou Yangjie Electronic Technology Co., Ltd. It features split gate trench MOSFET technology, a high-density cell design for low RDS(ON), and an excellent package for heat dissipation. This transistor ...
Silicon Carbide Power MOSFET YANGJIE YJD212040NCFG2 Designed for Fast Switching and High Temperature
Product OverviewThe YJD212040NCFG2 is a Silicon Carbide Power MOSFET (N-Channel Enhancement) designed for high-speed switching applications. It offers essentially no switching losses, reduced heat sink requirements, and a maximum working temperature of 175 C. Key features include high blocking ...
Planar die Zener diode XZT BZT52B9V1S designed for medium current applications and automated assembly
Product OverviewThe BZT52B2V4S thru BZT52B43S series are Zener diodes designed for general purpose, medium current applications. They are ideally suited for automated assembly processes and are available in a lead-free version. These diodes feature a planar die construction.Product AttributesBrand: ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
