2 amp 500 volt power MOSFET with fast switching and low on resistance Jingdao Microelectronics D2N50
Key Attributes
Model Number:
D2N50
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
500V
Current - Continuous Drain(Id):
2A
RDS(on):
7Ω@10V,2A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
2.2pF
Number:
-
Output Capacitance(Coss):
24pF
Pd - Power Dissipation:
54W
Input Capacitance(Ciss):
156pF@25V
Gate Charge(Qg):
7.9nC@10V
Mfr. Part #:
D2N50
Package:
TO-252W
Product Description
D2N50 - 2A, 500V N-CHANNEL POWER MOSFET
The D2N50 is a high voltage power MOSFET designed for high-speed switching applications. It offers improved characteristics such as fast switching time, low gate charge, low on-state resistance, and high rugged avalanche characteristics. This MOSFET is typically used in switching power supplies and adaptors.
Product Attributes
- Brand: Jingdao Microelectronics co.LTD
- Origin: Shandong Jingdao Microelectronics Co., Ltd.
- Material: "Green" molding compound, UL flammability classification 94V-0, "Halogen-free".
- Color: Not specified
- Certifications: RoHS compliant
Technical Specifications
| Parameter | Symbol | Rating | Unit | Test Conditions |
|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 500 | V | VGS=0V,ID=250uA |
| Gate-Source Voltage | VGSS | 30 | V | |
| Continuous Drain Current | ID | 2 | A | Tc=25 |
| Continuous Drain Current | ID | 1.3 | A | Tc=100 |
| Pulsed Drain Current (Note 2) | IDM | 8 | A | |
| Power Dissipation | PD | 54 | W | Tc=25 |
| Avalanche Energy Single Pulsed (Note 3) | EAS | 35 | mJ | |
| Peak Diode Recovery dv/dt (Note 4) | dv/dt | 2.1 | V/ns | |
| Operation Junction Temperature and Storage Temperature | Tj, stg | -55 ~ +150 | C | |
| Junction to Ambient Thermal Resistance | RthJA | 63 | C/W | |
| Junction to Case Thermal Resistance | RthJC | 2.31 | C/W | |
| Gate-Source Leakage Current | IGSS | -100 | nA | VGS=-30V,VDS=0V |
| Drain-Source Leakage Current | IDSS | 1 | uA | VDS=500V,VGS=0V |
| Static Drain-Source On-State Resistance | RDS(ON) | 7 | VGS=10V,ID=2.0A | |
| Gate Threshold Voltage | VGS(TH) | 2.0 | V | VDS=VGS,ID=250uA |
| Input Capacitance | CISS | 156 | pF | VDS=25V, VGS=0V, f=1.0MHz |
| Output Capacitance | COSS | 24 | pF | VDS=25V, VGS=0V, f=1.0MHz |
| Reverse Transfer Capacitance | CRSS | 7.9 | pF | VDS=25V, VGS=0V, f=1.0MHz |
| Total Gate Charge | QG | 720 | nC | VDS=400V,VGS=10V, ID=2A,RG=10 |
| Gate-Drain Charge | QGD | 16.7 | nC | VDS=400V,VGS=10V, ID=2A,RG=10 |
| Gate-Source Charge | QGS | 12.1 | nC | VDS=400V,VGS=10V, ID=2A,RG=10 |
| Turn-On Delay Time | tD(ON) | 7.2 | ns | VDS=250V,VGS=10V, ID=2A,RG=10 |
| Turn-On Rise Time | tR | 100 | ns | VDS=250V,VGS=10V, ID=2A,RG=10 |
| Turn-Off Delay Time | tD(OFF) | 2.7 | ns | VDS=250V,VGS=10V, ID=2A,RG=10 |
| Turn-Off Fall Time | tF | 7.2 | ns | VDS=250V,VGS=10V, ID=2A,RG=10 |
| Maximum Body-Diode Continuous Current | IS | 2 | A | |
| Maximum Body-Diode Pulsed Current | ISM | 8 | A | |
| Drain-Source Diode Forward Voltage | VSD | 1.5 | V | IS=2A,VGS=0V |
| Reverse Recovery Time | trr | 309 | ns | IS=2A,VGS=0V, di/dt=100A/us |
| Reverse Recovery Charge | Qrr | 2.2 | uC | IS=2A,VGS=0V, di/dt=100A/us |
2209221130_Jingdao-Microelectronics-D2N50_C5155253.pdf
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