High current P Channel MOSFET JingYang TPM0730N5X optimized for synchronous buck converter circuits
Key Attributes
Model Number:
TPM0730N5X
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
70A
Operating Temperature -:
-55℃~+150℃
RDS(on):
7.2mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.5V
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
140pF
Number:
1 P-Channel
Output Capacitance(Coss):
255pF
Input Capacitance(Ciss):
3.45nF
Pd - Power Dissipation:
90W
Gate Charge(Qg):
60nC@10V
Mfr. Part #:
TPM0730N5X
Package:
PDFN5X6-8L
Product Description
Product Overview
The TPM0730N5X is a high cell density trenched P-Channel MOSFET designed for synchronous buck converter applications. It offers excellent RDS(ON) and gate charge characteristics, meeting RoHS and Green Product requirements. This device is 100% EAS guaranteed with full functional reliability approval.
Product Attributes
- Certifications: RoHS, Green Product
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | -30 | V | |||
| Gate Source Voltage | VGSS | 20 | V | |||
| Drain Current (Continuous) | ID | TA=25C | -70 | A | ||
| Drain Current (Continuous) | ID | TA=100C | -50 | A | ||
| Drain Current (Pulse) | IDM | -200 | A | |||
| Power Dissipation | PD | TA=25C | 90 | W | ||
| Power Dissipation | PD | TA=100C | 54 | W | ||
| Operating Temperature/ Storage Temperature | TJ/TSTG | -55 | 150 | C | ||
| Single Pulse Avalanche Energy | EAS | 80 | mJ | |||
| Thermal Resistance, Junction-to-Ambient | RJA | 50 | C/W | |||
| Static Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0VID=-250uA | -30 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=-24VVGS=0V | -1 | uA | ||
| Gate Threshold Voltage | VGS(TH) | VDS=VGSIDS=-250uA | -1.2 | -2.5 | V | |
| Gate Leakage Current | IGSS | VGS=20VVDS=0V | 100 | nA | ||
| Drain-Source On-state Resistance | RDS(on) | VGS=-10VID=-20A | 7.2 | m | ||
| Drain-Source On-state Resistance | RDS(on) | VGS=-4.5VID=-15A | 12 | m | ||
| Diode Forward Voltage | VSD | ISD=-1AVGS=0V | -1.2 | V | ||
| Total Gate Charge | Qg | VGS=-10VVDD=-15V ID=-18A | 60 | nC | ||
| Gate- Source Charge | Qgs | 9 | nC | |||
| Gate- Drain Charge | Qgd | 15 | nC | |||
| Turn-on Delay Time | td(on) | VGS=-10VVDD=-15V ID=-20ARGEN=3.3 | 17 | ns | ||
| Turn-on Rise Time | tr | 40 | ns | |||
| Turn-off Delay Time | td(off) | 55 | ns | |||
| Turn-off Fall Time | tf | 13 | ns | |||
| Dynamic Input Capacitance | Ciss | VGS=0VVDS=-25Vf=1MHZ | 3450 | pF | ||
| Output Capacitance | Coss | 255 | pF | |||
| Reverse Transfer Capacitance | Crss | 140 | pF |
2405091033_JingYang-TPM0730N5X_C3038101.pdf
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