Power Management N Channel 50V 0.2A MOSFET JingYang TDNM3K50DWX Featuring ESD Protection and Low RDS
Key Attributes
Model Number:
TDNM3K50DWX
Product Custom Attributes
Drain To Source Voltage:
50V
Current - Continuous Drain(Id):
200mA
RDS(on):
4Ω@4.5V,200mA
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.5V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
13pF@25V
Number:
2 N-Channel
Output Capacitance(Coss):
25pF
Pd - Power Dissipation:
150mW
Input Capacitance(Ciss):
33pF@25V
Gate Charge(Qg):
4.7nC@10V
Mfr. Part #:
TDNM3K50DWX
Package:
SOT-363
Product Description
Product Overview
This N-Channel 50V, 0.2A N-MOSFET features ESD protection and a super high density cell design for extremely low RDS(ON). It offers exceptional on-resistance and maximum DC current capability, making it suitable for power management in notebooks, DC/DC converters, load switches, and LCD display inverters.
Product Attributes
- Brand: Titan mos (implied from datasheet)
- Origin: China (implied from website)
- Material: Not specified
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Parameter | Symbol | Limit | Unit | Notes |
| ABSOLUTE MAXIMUM RATINGS | ||||
| Drain-Source Voltage | VDS | 50 | V | |
| Gate-Source Voltage | VGS | 20 | V | |
| Continuous Drain Current (TA = 25 C) | ID | 0.25 | A | b, 5 secs |
| Continuous Drain Current (TA = 25 C) | ID | 0.2 | A | b, Steady State |
| Continuous Drain Current (TJ = 150 C)b TA = 85 C | ID | 0.2 | mA | |
| Continuous Drain Current (TJ = 150 C)b TA = 85 C | ID | 0.1 | mA | |
| Pulsed Drain Currenta | IDM | 800 | mA | a |
| Continuous Source Current (diode conduction)b | IS | 200 | mA | b |
| Maximum Power Dissipation TA = 25 C | PD | 250 | mW | e |
| Maximum Power Dissipation TA = 85 C | PD | 150 | mW | e |
| Maximum Power Dissipation for SOT363 TA = 25 C | PD | 200 | mW | e |
| Maximum Power Dissipation for SOT363 TA = 85 C | PD | 120 | mW | e |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 to 150 | C | |
| Thermal Resistance, JunctiontoAmbient | RJA | 633 | C/W | |
| STATIC | ||||
| Drain-Source Breakdown Voltage | V(BR)DSS | 50 | V | VGS=0V, ID=250A |
| Gate Threshold Voltage | VGS(th) | 1.5 | V | VDS=VGS, ID=1mA |
| Gate Leakage Current | IGSS | 10 | A | VDS=0V, VGS=20V |
| Zero Gate Voltage Drain Current | IDSS | 1 | A | DS V =50V, VGS=0V |
| Drain-Source On-Resistance | RDS(ON) | 2.5 | VGS=10V, ID=200mA, a | |
| Drain-Source On-Resistance | RDS(ON) | 3.5 | VGS=10V, ID=200mA, a | |
| Drain-Source On-Resistance | RDS(ON) | 3.1 | VGS=4.5V, ID=200mA, a | |
| Drain-Source On-Resistance | RDS(ON) | 4 | VGS=4.5V, ID=200mA, a | |
| Diode Forward Voltage | VSD | 0.8 | V | IS=0.44A, VGS=0V |
| Diode Forward Voltage | VSD | 1.4 | V | IS=0.44A, VGS=0V |
| DYNAMIC | ||||
| Total Gate Charge | Qg | 4.7 | nC | VDS=25V, VGS=10V, ID=0.22A |
| Gate Charge | Qgs | 1.7 | nC | |
| Gate-Drain Charge | Qgd | 0.8 | nC | |
| Input Capacitance | Ciss | 33 | pf | VDS=25V, VGS=0V, f=1MHZ |
| Output Capacitance | COSS | 25 | pf | |
| Reverse Transfer Capacitance | Crss | 13 | pf | |
| Turn-On Delay Time | td(on) | 10.1 | ns | VDD=5V, RL =500, VGEN=5V,RG=10 |
| Turn-On Rise Time | tr | 7.3 | ns | |
| Turn-Off Delay Time | td(off) | 31.3 | ns | |
| Turn-Off Fall Time | tf | 28.2 | ns | |
2405091034_JingYang-TDNM3K50DWX_C5364048.pdf
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