30 volt N Channel MOSFET JingYang TNM1K30KX optimized for portable device power management solutions
Key Attributes
Model Number:
TNM1K30KX
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
400mA
RDS(on):
400mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.1V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
8pF@5V
Number:
1 N-channel
Output Capacitance(Coss):
12.2pF
Pd - Power Dissipation:
350mW
Input Capacitance(Ciss):
42pF@5V
Mfr. Part #:
TNM1K30KX
Package:
SOT-23
Product Description
Product Overview
The TNM1K30KX is an N-Channel 30-V (D-S) MOSFET designed for low on-resistance and fast switching speeds. Its low voltage drive capability makes it ideal for portable equipment and easily designed drive circuits. It can also be easily paralleled for increased current handling. Applications include general switching and interfacing.
Product Attributes
- Brand: JY Electronics
- Origin: China
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | VDS(BR)DSS | VGS = 0V, ID =250A | 30 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS =30V,VGS = 0V | 1 | A | ||
| Gate Source leakage current | IGSS | VGS =10V, VDS = 0V | 10 | nA | ||
| Gate Threshold Voltage | VGS(th) | VDS = VGS , ID =250A | 0.78 | 1.1 | V | |
| Drain-Source On-Resistance | RDS(on) | VGS = 4.5V, ID =400mA | 0.8 | |||
| VGS = 2.5V, ID =300mA | 1.0 | |||||
| Forward Transconductance | gfs | VDS=3V,ID=10mA | 0.33 | mS | ||
| Input Capacitance | Ciss | VDS =5V,VGS =0V,f =1MHz | 42 | pF | ||
| Output Capacitance | Coss | VDS =5V,VGS =0V,f =1MHz | 12.2 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS =5V,VGS =0V,f =1MHz | 8 | pF | ||
| Turn-On Delay Time | td(on) | VGS =5V, VDD =5V, ID =10mA, Rg=10, RL=500, T =25 | 15 | ns | ||
| Rise Time | tr | VGS =5V, VDD =5V, ID =10mA, Rg=10, RL=500, T =25 | 35 | ns | ||
| Turn-Off Delay Time | td(off) | VGS =5V, VDD =5V, ID =10mA, Rg=10, RL=500, T =25 | 70 | ns | ||
| Fall Time | tf | VGS =5V, VDD =5V, ID =10mA, Rg=10, RL=500, T =25 | 70 | ns | ||
| Drain-Source Voltage | VDS | 30 | V | |||
| Gate-Source Voltage | VGS | 12 | V | |||
| Continuous Drain Current | ID | 0.4 | A | |||
| Power Dissipation | PD | 0.35 | W | |||
| Operation Junction and Storage Temperature Range | TJ,Tstg | -55 | +150 | |||
| Thermal Resistance, Junction-to-Ambient | RJA | Surfacemounted on FR4 board using 1 in sq pad size (Cu area = 1.27 in sq [2 oz] including traces). Pulse Test: Pulse Width 100 s, Duty Cycle 2.0%. | 357 | /W |
2410010230_JingYang-TNM1K30KX_C7434076.pdf
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