Silicon Planar Zener Diodes Including Jingdao Microelectronics BZT52C16SW with Compact SOD323 Package
Key Attributes
Model Number:
BZT52C16SW
Product Custom Attributes
Impedance(Zzt):
40Ω
Diode Configuration:
Independent
Pd - Power Dissipation:
200mW
Zener Voltage(Range):
15.3V~17.1V
Zener Voltage(Nom):
16V
Mfr. Part #:
BZT52C16SW
Package:
SOD-323W
Product Description
Product Overview
Silicon Planar Zener Diodes with a wide zener reverse voltage range from 2.4V to 43V. These diodes offer a total power dissipation of up to 200mW and are ideally suited for automated assembly processes. The SOD-323 package provides a compact solution for various electronic applications.
Product Attributes
- Brand: Jingdao Microelectronics
- Origin: China ()
- Package: SOD-323
Technical Specifications
| Type | Zener Voltage Range (V) Nom | Zener Voltage Range (V) Min | Zener Voltage Range (V) Max | Maximum Zener Impedance () @ IZT | Maximum Current (mA) IZT | Reverse Current (A) @ VR | Typical Temperature Coefficient (mV/C) @ IZTC | Test Current IZTC (mA) |
| BZT52C2V4S | 2.4 | 2.6 | 2.9 | 600 | 5 | 2.2 | 1 | 1 |
| BZT52C2V7S | 2.7 | 2.9 | 3.2 | 600 | 5 | 2.5 | 1 | 1 |
| BZT52C3V0S | 3.0 | 3.2 | 3.5 | 600 | 5 | 2.8 | 1 | 1 |
| BZT52C3V3S | 3.3 | 3.5 | 3.8 | 600 | 5 | 3.1 | 1 | 1 |
| BZT52C3V6S | 3.6 | 3.8 | 4.1 | 600 | 5 | 3.4 | 1 | 1 |
| BZT52C3V9S | 3.9 | 4.1 | 4.6 | 600 | 5 | 3.7 | 1 | 1 |
| BZT52C4V3S | 4.3 | 4.6 | 5.0 | 600 | 5 | 4.0 | 1 | 1 |
| BZT52C4V7S | 4.7 | 5.0 | 5.4 | 500 | 5 | 4.4 | 1 | 1 |
| BZT52C5V1S | 5.1 | 5.4 | 5.8 | 480 | 5 | 4.8 | 1 | 1 |
| BZT52C5V6S | 5.6 | 6.0 | 6.4 | 400 | 5 | 5.2 | 1 | 1 |
| BZT52C6V2S | 6.2 | 6.6 | 7.2 | 150 | 5 | 5.8 | 1 | 1 |
| BZT52C6V8S | 6.8 | 7.2 | 7.8 | 80 | 5 | 6.4 | 1 | 1 |
| BZT52C7V5S | 7.5 | 7.9 | 8.5 | 80 | 5 | 7.0 | 1 | 1 |
| BZT52C8V2S | 8.2 | 8.7 | 9.3 | 80 | 5 | 7.7 | 1 | 1 |
| BZT52C9V1S | 9.1 | 9.6 | 10.2 | 100 | 5 | 8.5 | 1 | 1 |
| BZT52C10S | 10 | 10.6 | 11.4 | 150 | 5 | 9.4 | 1 | 1 |
| BZT52C11S | 11 | 11.6 | 12.4 | 150 | 5 | 10.4 | 1 | 1 |
| BZT52C12S | 12 | 12.7 | 13.7 | 150 | 5 | 11.4 | 1 | 1 |
| BZT52C13S | 13 | 14.1 | 15.1 | 170 | 5 | 12.4 | 1 | 1 |
| BZT52C15S | 15 | 15.6 | 16.8 | 200 | 5 | 13.8 | 1 | 1 |
| BZT52C16S | 16 | 17.1 | 18.3 | 200 | 5 | 15.3 | 1 | 1 |
| BZT52C18S | 18 | 19.1 | 20.5 | 225 | 5 | 16.8 | 1 | 1 |
| BZT52C20S | 20 | 21.2 | 22.8 | 225 | 5 | 18.8 | 1 | 1 |
| BZT52C22S | 22 | 23.3 | 25.1 | 250 | 5 | 20.8 | 1 | 1 |
| BZT52C24S | 24 | 25.6 | 27.6 | 250 | 5 | 22.8 | 1 | 1 |
| BZT52C27S | 27 | 28.9 | 31.1 | 300 | 2 | 25.1 | 0.5 | 2 |
| BZT52C30S | 30 | 32.0 | 34.4 | 300 | 2 | 28.0 | 0.5 | 2 |
| BZT52C33S | 33 | 35.0 | 37.5 | 325 | 2 | 31.0 | 0.5 | 2 |
| BZT52C36S | 36 | 38.0 | 41.0 | 350 | 2 | 34.0 | 0.5 | 2 |
| BZT52C39S | 39 | 41.0 | 44.0 | 350 | 2 | 37.0 | 0.5 | 2 |
| BZT52C43S | 43 | 46.0 | 49.0 | 700 | 2 | 40.0 | 1 | 5 |
| Parameter | Symbol | Value | Unit |
| Total Power Dissipation | PD | 200 | mW |
| Operating and Storage Temperature Range | Tj, Tstg | -55 ~ +150 | C |
| Forward Voltage at IF = 10 mA | VF | 0.9 | V |
| Typical Thermal Resistance Junction to Ambient | RJA | 625 | C/W |
2409301403_Jingdao-Microelectronics-BZT52C16SW_C3019314.pdf
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