Schottky Diode JSCJ BAT64-04 featuring low forward voltage and diffused guard ring for bias isolation
Key Attributes
Model Number:
BAT64-04
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
800mA
Reverse Leakage Current (Ir):
2uA@25V
Voltage - DC Reverse (Vr) (Max):
40V
Diode Configuration:
1 Pair Series Connection
Voltage - Forward(Vf@If):
750mV@100mA
Current - Rectified:
250mA
Mfr. Part #:
BAT64-04
Package:
SOT-23
Product Description
Product Overview
The JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD BAT64 series Schottky Barrier Diodes are designed for low-loss, fast-recovery applications. They are suitable for meter protection, bias isolation, and clamping functions. These diodes feature an integrated diffused guard ring and a low forward voltage.
Product Attributes
- Brand: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
- Series: BAT64-04, BAT64-05, BAT64-06
- Package Type: SOT-23 Plastic-Encapsulate
- Material: Schottky Barrier Diode
- Marking: BAT64-04 (64S), BAT64-05 (65S), BAT64-06 (66S)
- Molding Compound: Solid dot = Green, otherwise normal device.
Technical Specifications
| Parameter | Symbol | BAT64-04/05/06 Limits | Unit | Test Conditions |
| Peak reverse voltage | VRM | 40 | V | @Ta=25 |
| DC reverse voltage | VR | 40 | V | |
| Non-repetitive Peak forward surge current @t=8.3ms | IFSM | 0.8 | A | |
| Forward current | IF | 0.25 | A | |
| Power Dissipation | PD | 250 | mW | |
| Thermal Resistance Junction-to-Ambient | RJA | 400 | /W | |
| Junction temperature | Tj | 125 | ||
| Storage temperature | Tstg | -55~+150 | ||
| Reverse breakdown voltage | VR | 40 | V | IR=10A |
| Forward voltage | VF | 350 | mV | IF=1mA |
| 430 | mV | IF=10mA | ||
| 520 | mV | IF=30mA | ||
| 750 | mV | IF=100mA | ||
| Reverse current | IR | 2 | A | VR=25V |
| Capacitance between terminals | CT | 6 | pF | VR=1V,f=1MHz |
2410121255_JSCJ-BAT64-04_C77330.pdf
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