switching MOSFET Jingdao Microelectronics F10N70 with low gate charge and high avalanche energy rating
Key Attributes
Model Number:
F10N70
Product Custom Attributes
Drain To Source Voltage:
700V
Current - Continuous Drain(Id):
10A
RDS(on):
900mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
9pF
Input Capacitance(Ciss):
1.65nF
Output Capacitance(Coss):
140pF
Pd - Power Dissipation:
45W
Gate Charge(Qg):
28nC@10V
Mfr. Part #:
F10N70
Package:
ITO-220ABW
Product Description
Product Overview
The F10N70 is a high voltage N-channel Power MOSFET designed for high-speed switching applications. It offers improved characteristics such as fast switching time, low gate charge, low on-state resistance, and high rugged avalanche characteristics. This MOSFET is typically used in switching power supplies and adaptors.
Product Attributes
- Brand: Jingdao Microelectronics co.LTD
- Origin: Shandong, China
- Case Material: "Green" molding compound, UL flammability classification 94V-0, "Halogen-free".
- Certifications: RoHS compliant
Technical Specifications
| Parameter | Symbol | Rating | Unit | Conditions |
| ABSOLUTE MAXIMUM RATINGS | ||||
| Drain-Source Voltage | VDSS | 700 | V | |
| Gate-Source Voltage | VGSS | ±30 | V | |
| Continuous Drain Current | ID | 10 | A | Tc=25°C |
| Pulsed Drain Current | IDM | 40 | A | Note 2 |
| Avalanche Energy Single Pulsed | EAS | 800 | mJ | Note 3 |
| Peak Diode Recovery dv/dt | dv/dt | 2.1 | V/ns | Note 4 |
| Power Dissipation | PD | 6.3 | W | Tc=25°C |
| Junction to Ambient Thermal Resistance | RthJA | 63 | °C/W | Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. |
| Junction to Case Thermal Resistance | RthJC | 2.76 | °C/W | |
| Operation Junction Temperature and Storage Temperature | Tj, stg | -55 ~ +150 | °C | |
| ELECTRICAL CHARACTERISTICS | ||||
| Drain-Source Breakdown Voltage | BVDSS | 700 | V | VGS=0V, ID=250µA |
| Gate-Source Leakage Current | IGSS | ±100 | nA | VGS=±30V, VDS=0V |
| Drain-Source Leakage Current | IDSS | 1 | µA | VDS=700V, VGS=0V |
| Gate Threshold Voltage | VGS(TH) | 2.0 | V | VDS=VGS, ID=250µA |
| Static Drain-Source On-State Resistance | RDS(ON) | 1.2 | Ω | VGS=10V, ID=5.0A |
| Input Capacitance | CISS | 1650 | pF | VDS=25V, VGS=0V, f=1.0MHz |
| Output Capacitance | COSS | 140 | pF | VDS=25V, VGS=0V, f=1.0MHz |
| Reverse Transfer Capacitance | CRSS | 9 | pF | VDS=25V, VGS=0V, f=1.0MHz |
| Total Gate Charge | QG | 28 | nC | VDS=560V, VGS=10V, ID=10A, IG=1mA (NOTE1,2) |
| Turn-On Delay Time | tD(ON) | 9.5 | ns | VDS=100V, VGS=10V, ID=10A, RG=25Ω (NOTE1,2) |
| Turn-On Rise Time | tR | 13 | ns | VDS=100V, VGS=10V, ID=10A, RG=25Ω (NOTE1,2) |
| Turn-Off Delay Time | tD(OFF) | 40 | ns | VDS=100V, VGS=10V, ID=10A, RG=25Ω (NOTE1,2) |
| Turn-Off Fall Time | tF | 52 | ns | VDS=100V, VGS=10V, ID=10A, RG=25Ω (NOTE1,2) |
| Maximum Body-Diode Continuous Current | IS | 10 | A | |
| Maximum Body-Diode Pulsed Current | ISM | 40 | A | |
| Drain-Source Diode Forward Voltage | VSD | 1.4 | V | IS=10A, VGS=0V (Note 1) |
| Reverse Recovery Time | trr | 571 | ns | IS=10A, VGS=0V, di/dt=100A/us (Note 1) |
| Reverse Recovery Charge | Qrr | 4.7 | µC | IS=10A, VGS=0V, di/dt=100A/us (Note 1) |
2412111839_Jingdao-Microelectronics-F10N70_C7469040.pdf
Related Products
Digital transistor YANGJIE DTC124EUA featuring built in resistors and UL 94 V 0 rating for electronic
Product OverviewThe DTC124EUA is a digital transistor with built-in resistors, designed for easy configuration of inverter circuits without external input resistors. It features a surface mount package ideal for automatic insertion and meets UL-94 V-0 flammability rating. This NPN transistor is ...
Planar Die Zener Diode Series Including XZT BZT52C18S Suitable for Medium Current Applications
Product OverviewThe BZT52C2V4S thru BZT52C43S series are planar die construction Zener diodes designed for general purpose, medium current applications. They are ideally suited for automated assembly processes and are available in lead-free versions. These diodes offer a wide range of Zener voltages ...
Surface Mount Schottky Bridge Rectifier YONGYUTAI MB14F with 40 Volt Reverse Voltage and 1 Amp Forward Current
Product OverviewThis MBF package Surface Mount Schottky Bridge rectifier offers a reverse voltage range of 40 to 200V and a forward current of 1A. It features high surge current capability and is designed for surface mount applications. Ideal for single-phase half-wave 60 Hz rectification with ...
Power Management and Motor Drive Applications Featuring YANGJIE YJD90N06A N Channel MOSFET Transistor
Product OverviewThe YJD90N06A is an N-Channel Enhancement Mode Field Effect Transistor featuring Trench Power MV MOSFET technology. It offers excellent heat dissipation and a high-density cell design for low RDS(ON). This transistor is suitable for DC-DC converters, power management functions, and ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
