420V Peak Reverse Voltage Rectifier Diode JSCJ ES1H SMAG with 1A Forward Current and Surge Capability
Key Attributes
Model Number:
ES1H(SMAG)
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
30A
Reverse Leakage Current (Ir):
5uA@VRRM
Reverse Recovery Time (trr):
35ns
Operating Junction Temperature Range:
-55℃~+150℃
Voltage - DC Reverse (Vr) (Max):
500V
Voltage - Forward(Vf@If):
1.7V@1.0A
Current - Rectified:
1A
Mfr. Part #:
ES1H(SMAG)
Package:
SMAG
Product Description
Product Overview
The ES1A through ES1J series are Super Fast Recovery Rectifier Diodes designed for high-speed rectification applications. These diodes offer high surge current capability and are available in voltage ratings from 50V to 600V, with an average forward current of 1A. They are suitable for general rectifier applications.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Marking: ES1X (X: From A To J)
- Polarity: Color band denotes cathode
- Package: SMAG (Plastic-Encapsulated Diodes)
- Origin: China (implied by manufacturer location)
Technical Specifications
| Item | Symbol | Unit | Test Condition | ES1A | ES1B | ES1C | ES1D | ES1E | ES1G | ES1H | ES1J |
| Repetitive Peak Reverse Voltage | VRRM | V | 50 | 100 | 140 | 210 | 280 | 350 | 420 | 600 | |
| Average Forward Current | IF(AV) | A | 1.0 | ||||||||
| Surge(Non-repetitive)Forward Current | IFSM | A | 60Hz Half-sine wave, 1 cycle, Ta=25 | 30 | |||||||
| Peak Forward Voltage | VF | V | IF =1.0A | 0.95 | 1.25 | ||||||
| Maximum reverse recovery time | trr | ns | IF=0.5A,IR=1.0A,Irr=0.25A,VRM=VRRM | 35 | |||||||
| Peak Reverse Current | IRRM1 | A | Ta =25 | 100 | 150 | 200 | 300 | 400 | 500 | 600 | 750 |
| Peak Reverse Current | IRRM2 | A | Ta =125 | 1.70 | Maximum RMS Voltage | ||||||
| Maximum RMS Voltage | VRMS | V | 35 | 70 | 140 | 210 | 280 | 350 | 420 | 500 | |
| Operation Junction and Storage Temperature Range | TJ,TSTG | -55 ~ +150 | |||||||||
| Thermal Resistance(Typical) | R J-A | /W | mounted on FR4 PCB double sided copper mini pad | 75 | |||||||
| Thermal Resistance(Typical) | R J-L | /W | Between junction and terminal | 27 | |||||||
| Junction Capacitance (Typical) | Cj | pF | Measured at 1MHZ and Applied Reverse Voltage of 4.0 V.D.C | 14 | 12 | 10 | |||||
2410122022_JSCJ-ES1H-SMAG_C5356813.pdf
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