High Current Schottky Rectifier JSCJ SBDD2045CT with 45 Volt Peak Reverse Voltage and 150 Amp Surge
Key Attributes
Model Number:
SBDD2045CT
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
150A
Reverse Leakage Current (Ir):
10uA@45V
Voltage - DC Reverse (Vr) (Max):
45V
Diode Configuration:
1 Pair Common Cathode
Voltage - Forward(Vf@If):
590mV@10A
Current - Rectified:
20A
Mfr. Part #:
SBDD2045CT
Package:
TO-252-2
Product Description
Product Overview
The SBDD2045CT is a Schottky Barrier Rectifier designed for high efficiency and high current capability with a low forward voltage drop. It features guard ring die construction for transient protection, making it suitable for applications requiring low power loss and reliable performance.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Device Code: SBDD2045CT
- Marking: D2045CT
- Packaging: TO-252-2L
- Material: Plastic-Encapsulate Diodes
- Color: Normal device (or Green molding compound if solid dot present)
Technical Specifications
| Parameter | Symbol | Test Conditions | Value | Unit |
| Peak repetitive reverse voltage | VRRM | 45 | V | |
| Working peak reverse voltage | VRWM | 45 | V | |
| DC blocking voltage | VR | 45 | V | |
| RMS reverse voltage | VR(RMS) | 31.5 | V | |
| Average rectified output current | IO | Ta=25 | 20 | A |
| Non-Repetitive peak forward surge current | IFSM | 8.3ms half sine wave | 150 | A |
| Thermal resistance junction to ambient | RJA | 5.0 | /W | |
| Thermal resistance junction to case | RJC | 5.0 | /W | |
| Junction temperature | Tj | 150 | ||
| Storage temperature | Tstg | -55~+150 | ||
| Reverse voltage | V(BR) | IR=0.1mA | 45 | V |
| Reverse current | IR | VR=45V, Tj =25 | 100 | A |
| Reverse current | IR | VR=45V, Tj =125 | 10 | mA |
| Forward voltage | VF | IF=5A, Tj =25 | 0.59 | V |
| Forward voltage | VF | IF=5A, Tj =125 | 0.65 | V |
| Forward voltage (typical) | VF(typ) | @ Tj=125 | 0.51 | V |
| Total Capacitance | CTOT | f = 1 MHz, Tj = 25 | 100 | pF |
2410121814_JSCJ-SBDD2045CT_C513354.pdf
Related Products
High DC Current Gain Slkor 2SD596-DV4 NPN Transistor SOT-23 Package Suitable for Electronic Circuits
Product Overview The 2SD596 is an NPN transistor offering high DC current gain, making it a complementary part to the 2SB624. It is designed for applications requiring efficient current amplification and is suitable for various electronic circuits. Product Attributes Brand: slkormicro Product Type: ...
Lead Free Surface Mount P Channel Power MOSFET Slkor SL3401S Designed for Power Management Systems
Product OverviewThe SL3401S is a P-Channel Power MOSFET designed for high power and current handling capabilities. It features low on-state resistance at various gate-source voltages, making it suitable for applications such as PWM, load switching, and power management. This lead-free product is ...
Dual N Channel MOSFET Slkor SL4826A 60V 6.3A with Low RDS ON Resistance and Avalanche Voltage Rating
Product OverviewThe SL4826A is a 60V/6.3A Dual N-Channel MOSFET designed for high-density cell design, offering ultra-low RDS(ON). It is fully characterized for avalanche voltage and current and features an excellent package for good heat dissipation. This MOSFET is ideal for power switching ...
Power MOSFET Slkor SL4N65F featuring low gate charge and high power dissipation for switch mode power supplies
Product OverviewThe SL4N65 is a high-performance N-Channel MOSFET designed for various power switching applications. It features low gate charge, fast switching speeds, and excellent dv/dt capability, making it ideal for high-efficiency switch mode power supplies, electronic lamp ballasts, and LED ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
